Low-Voltage Single SPDT Analog Switch

1 vishay SiliconixDG2012 Document Number: 72176S-70852-Rev. B, Single SPDT Analog SwitchFEATURES Low voltage Operation ( V to V) Low On-Resistance - rDS(on): 1 Typ. Fast Switching - tON: 17 ns, tOFF: 13 ns Low Leakage TTL/CMOS Compatible 6-Pin SC-70 PackageBENEFITS Reduced Power Consumption Simple Logic Interface High Accuracy Reduce Board SpaceAPPLICATIONS Cellular Phones Communication Systems Portable Test Equipment Battery Operated Systems Sample and Hold CircuitsDESCRIPTIONThe DG2012 is a Single -pole/double-throw monolithic CMOS Analog Switch designed for high performance switching ofanalog signals. Combining low power, high speed(tON: 17 ns, tOFF: 13 ns), low on-resistance (rDS(on): 1 ) andsmall physical size (SC70), the DG2012 is ideal for portableand battery powered applications requiring highperformance and efficient use of board DG2012 is built on vishay Siliconix s low voltagesubmicron CMOS process.

2 An epitaxial layer preventslatchup. Break-before -make is guaranteed for Switch conducts equally well in both directions whenon, and blocks up to the power supply level when BLOCK DIAGRAM AND PIN CONFIGURATION * Pb containing terminations are not RoHS compliant, exemptions may applyNO (Source1)COMNC (Source2)12365 Top ViewINV+GND4SC-70 Device Marking: E7xxTRUTH TABLE LogicNCNO0 ONOFF1 OFFONORDERING INFORMATION Temp RangePackagePart Number- 40 to 85 CSC70-6DG2012DL-T1DG2012DL-T1-E3 AvailablePb-freeRoHS* Number: 72176S-70852-Rev. B, 30-Apr-07 vishay SiliconixDG2012 Notes: a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current All leads welded or soldered to PC Derate mW/ C above 70 MAXIMUM RATINGSP arameter LimitUnit Referenced V+ to GND- to + 6 VIN, COM, NC, NOa- to (V+ + )Continuous Current (NO, NC and COM Pins) 100mAPeak Current (Pulsed at 1 ms, 10 % duty cycle) 300 Storage Temperature (D Suffix)- 65 to 150 CPower Dissipation (Packages)b6-Pin SO70c250mWSPECIFICATIONS (V+ = V)

3 Parameter Symbol Test Conditions Otherwise Unless Specified V+ = V, 10 %, VIN = or VeTempa Limits - 40 to 85 CUnit MinbTypcMaxbAnalog SwitchAnalog Signal RangedVNO, VNCVCOMFull0V+VOn-ResistancerONV+ = V, VCOM = VINO, INC = 10 rON FlatnessdrONFlatnessV+ = V, VCOM = 0 to V+, INO, INC = 10 mARoom3rON Matchd Off Leakage CurrentfINO(off)INC(off)V+ = VVNO, VNC = V, VCOM = VRoomFull- (off)RoomFulld- Leakage CurrentfICOM(on)V+ = V, VNO, VNC = VCOM = VRoomFulld- ControlInput High Low CapacitancedCinFull3pFInput CurrentfIINL or IINHVIN = 0 or V+Full- 11 ADynamic CharacteristicsTu r n - O n T i m edtONVNO or VNC = V, RL = 300 , CL = 35 pFFigures 1 and 2 RoomFulld436365nsTurn-Off TimedtOFFRoomFulld234546 Break-Before-Make TimedtdRoom2 Charge InjectiondQINJCL = 1 nF, VGEN = 0 V, RGEN = 0 , Figure 3 Room7pCOff-IsolationdOIRRRL = 50 , CL = 5 pF, f = 1 MHzRoom- 63dBCrosstalkdXTA L KRoom- 64NO, NC Off CapacitancedCNO(off)CNC(off)VIN = 0 or V+, f = 1 MHzRoom22pFChannel-On CapacitancedCONRoom58 Document Number: 72176S-70852-Rev.

4 B, SiliconixDG2012 SPECIFICATIONS (V+ = V) Parameter Symbol Test Conditions Otherwise Unless Specified V+ = 3 V, 10 %, VIN = or VeTempa Limits - 40 to 85 CUnit MinbTypcMaxbAnalog SwitchAnalog Signal RangedVNO, VNCVCOMFull0V+VOn-ResistancerONV+ = V, VCOM = V, INO INC = 10 rON FlatnessrONFlatnessV+ = V, VCOM = 0 to V+, INO, INC = 10 MatchFlat Off Leakage CurrentfINO(off)INC(off)V+ = VVNO, VNC = 1 V/3 V, VCOM = 3 V/1 VRoomFull- (off)RoomFull- Leakage CurrentfICOM(on)V+ = V, VNO, VNC = VCOM = 1 V/3 VRoomFull- ControlInput High VoltageVINHFull2 VInput Low CapacitancedCinFull3pFInput CurrentfIINL or IINHVIN = 0 or V+Full- 11 ADynamic CharacteristicsTu r n - O n T i m etONVNO or VNC = V, RL = 300 , CL = 35 pFFigures 1 and 2 RoomFull274748nsTurn-Off TimetOFFRoomFull173738 Break-Before-Make TimetdRoom1 Charge InjectiondQINJCL = 1 nF, VGEN = 0 V, RGEN = 0 , Figure 3 Room10pCOff-IsolationdOIRRRL = 50 , CL = 5 pF, f = 1 MHzRoom- 63dBCrosstalkdXTA L KRoom- 64NO, NC Off CapacitancedCNO(off)CNC(off)VIN = 0 or V+, f = 1 MHzRoom21pFChannel-On CapacitancedCONRoom57 Power SupplyPower Supply RangeV+ Supply CurrentI+VIN = 0 or V+ Number: 72176S-70852-Rev.

5 B, 30-Apr-07 vishay SiliconixDG2012 Notes: a. Room = 25 C, Full = as determined by the operating The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data Typical values are for design aid only, not guaranteed nor subject to production Guarantee by design, nor subjected to production VIN = input voltage to perform proper Guaranteed by 5 V leakage testing, not production tested. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied.

6 Exposure to absolute maximumrating conditions for extended periods may affect device (V+ = V) Parameter Symbol Test Conditions Otherwise Unless Specified V+ = 5 V, 10 %, VIN = or VeTempa Limits - 40 to 85 CUnit MinbTypcMaxbAnalog SwitchAnalog Signal RangedVNO, VNCVCOMFull0V+VOn-ResistancerONV+ = V, VCOM = VINO, INC = 10 rON FlatnessdrONFlatnessV+ = V, VCOM = 0 to V+, INO, INC = 10 Matchd Off Leakage CurrentINO(off)INC(off)V+ = VVNO, VNC = V, VCOM = VRoomFull- (off)RoomFull- Leakage CurrentICOM(on)V+ = V, VNO, VNC = VCOM = VRoomFull- ControlInput High Low CapacitanceCinFull3pFInput CurrentIINL or IINHVIN = 0 or V+Full- 11 ADynamic CharacteristicsTu r n - O n T i m edtONVNO or VNC = 3 V, RL = 300 , CL = 35 pFFigures 1 and 2 RoomFull173839nsTurn-Off TimedtOFFRoomFull133233 Break-Before-Make TimedtdRoom1 Charge InjectiondQINJCL = 1 nF, VGEN = 0 V, RGEN = 0 , Figure 3 Room20pCOff-IsolationdOIRRRL = 50 , CL = 5 pF, f = 1 MHzRoom- 63dBCrosstalkdXTA L KRoom- 64 Source-Off CapacitancedCNO(off)CNC(off)VIN = 0 or V+, f = 1 MHzRoom20pFChannel-On CapacitancedCONRoom56 Document Number: 72176S-70852-Rev.

7 B, SiliconixDG2012 TYPICAL CHARACTERISTICS 25 C, unless otherwise notedrON vs. VCOM and Supply VoltageSupply Current vs. TemperatureLeakage Current vs. Temperature- On-Resistance ( )rON0123456012345 VCOM - Analog voltage (V)V+ = VV+ = 2 VV+ = 3 VV+ = 5 VIS = 10 mA- 60- 40- 200204060801001000010001 Temperature ( C)I+ - Supply Current (nA)10V+ = 5 VVIN = 0 V100- 60- 40- Current (pA)Temperature ( C)1000V+ = 5 V1 INO(off)/INC(off)ICOM(on)ICOM(off)rON vs. Analog voltage and TemperatureSupply Current vs. Input Switching FrequencyLeakage vs. Analog Voltage0123456012345- On-Resistance ( )rONVCOM - Analog voltage (V)V+ = 2 VV+ = 5 V85 C- 40 C25 C85 C25 CIS = 10 mAV+ = 3 V85 C- 40 C25 C- 40 C10 mInput Switching Frequency (Hz)10 K1 M10 M100 K1 K10010I+ - Supply Current (A)100 p1 m100 10 1 10 n100 nV+ = 3 V1 n- 250- 200- 150- 100- 50050100150200250012345 VCOM, VNO, VNC - Analog VoltageLeakage Current (pA)V+ = 5 VT = 25 CINO(off)/INC(off)ICOM(on)ICOM(off) Number: 72176S-70852-Rev.

8 B, 30-Apr-07 vishay SiliconixDG2012 TYPICAL CHARACTERISTICS 25 C, unless otherwise notedSwitching Time vs. Temperature and Supply VoltageSwitching Threshold vs. Supply Voltage05101520253035404550- 60- 40- 20020406080100tON V+ = 2 VTemperature ( C)tON,tOFF- Switching Time (ns)tON V+ = 3 VtON V+ = 5 VtOFF V+ = 2 VtOFF V+ = 3 VtOFF V+ = 5 + - Supply voltage (V)VT- Switching Threshold (V)Insertion Loss, Off-Isolation Crosstalk vs. FrequencyCharge Injection vs. Analog voltage - 90- 2010 Loss, OIRR, XFrequency (Hz)- 10010 M1 G100 M1 M100 K- 30- 40- 50- 60- 70- 80 TALK(dB)V+ = 5 VRL = 50 LOSSOIRRXTALK- 30- 20- 1001020300123456 VCOM - Analog voltage (v)Q - Charge Injection (pC)V+ = 2 VV+ = 3 VV+ = 5 VDocument Number: 72176S-70852-Rev.

9 B, SiliconixDG2012 TEST CIRCUITSF igure 1. Switching TimeSwitchInputCL (includes fixture and stray capacitance)V+INNO or NCCL35 pFCOML ogicInputRL300 VOUTGNDV+50 %0 VLogicInputSwitchOutputtONtOFFL ogic "1" = Switch OnLogic input waveforms inverted for switches that havethe opposite logic x VOUTtr < 5 nstf < 5 nsVINHVINLVOUT= VCOMRLRL+ RONF igure 2. Break-Before-Make IntervalCL (includes fixture and stray capacitance)NCVNONOVNC0 VLogicInputSwitchOutputVOVNC = VNOtr < 5 nstf < 5 ns90 %tDtDINCOMV+GNDV+CL35 pFVORL300 VINHVINLF igure 3. Charge InjectionOffOnOnIN VOUTVOUTQ = VOUT x CLCL = 1 nFCOMRgenVOUTNC or NOVIN = 0 - V+INVgenGNDV+V+IN depends on Switch configuration: input polaritydetermined by sense of Switch .

10 + Number: 72176S-70852-Rev. B, 30-Apr-07 vishay SiliconixDG2012 TEST CIRCUITSV ishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliabilitydata, see 4. Off-IsolationINGNDNC or NO0 V, V10 nFCOMOff Isolation = 20 logVCOMVNO/ NCRLA nalyzerV+V+Figure 5. Channel Off/On CapacitanceNC or NOf = 1 MHzINCOMGND0 V, VMeterHP4192 AImpedanceAnalyzeror Equivalent10 nFV+V+ Document Number: : 18-Jul-081 DisclaimerLegal Disclaimer NoticeVishayAll product specifications and data are subject to change without notice.