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Memory Module Specifi cations - Kingston Technology

KVR16N11S8/44GB 1Rx8 512M x 64-Bit PC3-12800CL11 240-Pin DIMMDESCRIPTIONThis document describes ValueRAM's 512M x 64-bit (4GB)DDR3-1600 CL11 SDRAM (Synchronous DRAM) 1Rx8, memorymodule, based on eight 512M x 8-bit FBGA components. TheSPD is programmed to JEDEC standard latency DDR3-1600timing of 11-11-11 at This 240-pin DIMM uses goldcontact fingers. The electrical and mechanical specificationsare as follows:FEATURES JEDEC standard Power Supply VDDQ = 800 MHz fCK for 1600Mb/sec/pin 8 independent internal bank Programmable CAS Latency: 11, 10, 9, 8, 7, 6 Programmable Additive Latency: 0, CL - 2, or CL - 1 clock 8-bit pre-fetch Burst Length: 8 (Interleave without any limit, sequential withstarting address 000 only), 4 with tCCD = 4 which does notallow seamless read or write [either on the fly using A12 orMRS] Bi-directional Differential Data Strobe Internal(self) calibration : Internal self calibration through ZQpin (RZQ : 240 ohm 1%) On Die Termination using ODT pi

800MHz fCK for 1600Mb/sec/pin • 8 independent internal bank • Programmable CAS Latency: 11, 10, 9, 8, 7, 6 • Programmable Additive Latency: 0, CL - 2, or CL - 1 clock • 8-bit pre-fetch • Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not

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Transcription of Memory Module Specifi cations - Kingston Technology

1 KVR16N11S8/44GB 1Rx8 512M x 64-Bit PC3-12800CL11 240-Pin DIMMDESCRIPTIONThis document describes ValueRAM's 512M x 64-bit (4GB)DDR3-1600 CL11 SDRAM (Synchronous DRAM) 1Rx8, memorymodule, based on eight 512M x 8-bit FBGA components. TheSPD is programmed to JEDEC standard latency DDR3-1600timing of 11-11-11 at This 240-pin DIMM uses goldcontact fingers. The electrical and mechanical specificationsare as follows:FEATURES JEDEC standard Power Supply VDDQ = 800 MHz fCK for 1600Mb/sec/pin 8 independent internal bank Programmable CAS Latency: 11, 10, 9, 8, 7, 6 Programmable Additive Latency: 0, CL - 2, or CL - 1 clock 8-bit pre-fetch Burst Length: 8 (Interleave without any limit, sequential withstarting address 000 only), 4 with tCCD = 4 which does notallow seamless read or write [either on the fly using A12 orMRS] Bi-directional Differential Data Strobe Internal(self) calibration : Internal self calibration through ZQpin (RZQ.)

2 240 ohm 1%) On Die Termination using ODT pin Average Refresh Period at lower than TCASE 85 C, at 85 C < TCASE < 95 C Asynchronous Reset PCB : Height ( ) or ( )Document No. 05/10/21 Page 1 Memory Module Specifi cationsSPECIFICATIONS selcyc 11)DDI(LCRow Cycle Time (tRCmin) (min.)Refresh to Active/Refresh260ns (min.)Command Time (tRFCmin)Row Active Time (tRASmin)35ns (min.)0 - V 49gnitaR LUOperating Temperature0o C to 85o CStorage Temperature-55o C to +100o CContinued >>Important Information: The Module defined in this data sheet is one of several configurations available under this part number. While all configurations are compatible, the DRAM combination and/or the Module height may vary from what is described DIMENSIONS:Document No.

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