シリコン産業の現状と課題 - meti.go.jp

1 1 2 3 Europe21%Japan22%America32%AsiaPacific25 % 050,000100,000150,000200,000250,000300,0 001999 2000 2001 2002 2003 2004 2005 2006 2007 AsiaPacificJapanEuropeAmericaJapan21%Eur ope19%America18%AsiaPacific42% 4 1TI Intel Intel Intel Intel Intel Intel Intel Intel Intel2 Motorola Samsung Samsung Samsung Samsung3 Philips Motorola ST MicroElectronics TI TI4 Motorola Motorola Samsung Samsung SamsungST MicroElectronicsTI Infineon 5 NSC TI TI TI TI TI TI ST MicroElectronics6 NSC TI Samsung MotorolaST MicroElectronics NEC ST MicroElectronics Infineon7 Motorola Motorola Infineon InfineonST MicroElectronics 8 Intel Philips Philips Infineon MotorolaNEC NEC Philips9 Fear-Child

2 PhilipsST MicroElectronicsST MicroElectronicsInfineon Philips Philips s s AMD10 Siemens Infineon PhilipsMicronTechnologyInfineon Philips PhilipsNEC 2003 2004 20051999 2000 2001 20021980 1986 1992 1998501,0002,0003,0004,0005,0006,0007,00 08,0009,0002000 2001 2002 2003 2004 2005 2006 2007 2008 601,0002,0003,0004,0005,0006,0007,0008,0 001993 1994 1995 1996 1997 1998 1999 2000 2001 2002 2003 2004 2005 7 $/sq-inch $/sq-inch $/sq-inch $/sq-inch 010203040506070802001 2002 2003 2004 / 2003 2004 2005 2006 2007

3 902004006008001,0001,2001,4001,6001998 1999 2000 2001 2002 2003 2004 0100020003000400050006000 300200<150 10 I II II/I (III III/I 1998 624,769168, , 644,492 10372,49943 , 902000 790,047 12391,811127 , 952001 589,359 7594,403103 , 1002002 657,034 11181,03786 , 962003 681,212 104120,798149 , 842004 779,856 114151,115125 , 103 11 0100020003000400050006000700080009000199 5 1996 1997 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 1205001000150020002500300035004000198519 87198919911993199519971999200120032005 (ton))

4 0102030405060 13 / 2004 2003 100 2,504 1,450 % 585 1,931 3,339 % % 157 225 620 % 75 170 550 116 749 2,002 % 187 370 2,514( ) % LG-Siltronic %14 FZ CZ DW 15 America Inc.

5 CZ Europe Ltd. CZ (Shah Alam) Sdn. Bhd. Malaysia Sdn. Bhd. Taiwan Co., Ltd. SUMCO Phoenix Corporation CZ SUMCO Southwest Corporation CZ SUMCO France PT SUMCO Indonesia Formosa Komatsu Silicon CZ Corporation Tocera Korea Ltd, 16 WackerMEMC Wacker-NSC MEMC 17 18

6 19 VLSI Research, SEMATECH,I300I20 SEMATECH : Manufactuable Solusions Known : Manufactuable Solusions Unknown Year of ProductionDRAM 1/2 Pitch (nm) (contacted)MPU/ASIC Metal 1 (M1) 1/2 Pitch (nm) (contacted) MPU Physical Gate Length (nm)DRAM T otal Chip Ar ea ( mm2)DRAM Ac t iv e T r an s is t o r Ar ea ( m m2)MPU High-Performance Total Chip Area (mm2)MP U High-Performance Total Chip Area (mm2)Active Transistor Area (mm2)Maximum Substrate Diameter (mm) - High Volume Production ( >20K wafer starts per month)Edge exclusion (mm) surface particle size (nm), latex sphere equivalent [D] [E] 90 90 65 65 65 45 45 Particles (cm-2) Particles (#/wafer) 116 120 113 115 115 265 271 Site flatness (nm), SFQR 26mm x 8mm site size [F,R] 70 57 50 45 40 35 32 Nanotopography, p-v, 2mm diameter analysis area [Q] 18 14 13 11 10 9 8 Oxidation stacking faults (OSF)(DRAM)(cm-2) [G] stacking faults (OSF)(MPU)(cm-2)

7 [G] structural epi defects (DRAM)(cm-2) [J] structural epi defects (MPU)(cm-2) [J] structural epi defects (DRAM)(cm-2) [K] struc tural epi defec ts (MPU)(c m-2) [K] exclusion (mm) silicon layer thickness(Partially Depleted)(tolerance 5%, 3б)(nm)[L]Starting silicon layer thickness(Fully Depleted)(toleranc e 5 3б)(nm)[M]Buried oxide (BOX) thickness(Fully Depleted)(toleranc e 5 3б)(nm)[N]DLASOI, Large area SOI water defects (DRAM) (cm-2)[O] , Large area SOI water defects (MPU) (cm-2)[O] SA SO I, Smal l area SO I w afer d efect s (D RA M)(cm-2 ) [P ] , Small area SOI wafer fefects (MPU)(cm-2)[P] Wafer* (99% Chip Yield) [R]37-6553-91 Allowable Front Surface Defect Density is The sum of Epitaxial Large Structural Defects, Small Structural Defects and Particles(see General characGeneral Characteristics * (99% Chip Yield) [A,B,C]Epitaxial Wafer * (99% Chip Yield) Wafer * (99% Chip Yield) LLS requirement is specified for particles only.)

8 Discrimination between particles and COPs is required (see General Characteristics) [D,E]2029-4240-7015-2915-2813-1531-4513- 1524-4026-4414-2722-36 18-3230045045021020406080100120140160 SEHSUMCOKEMS iltronics MEMC 03 03 04 04 05 22 Si 010203040506070 Si 03 03 04 04 05 23 24

9 0204060801001201401602001 2002 2003 2004 2005 0100200300400500600 / / 25 / 26 27 / / / 28 1996-2000 1998 1999

10 2000 2002 29 2001-2003 2004-2007 2001-2006 2001-2004 1987- 30 31