MIL-STD-883E, Test Method Standard for …

1 0,/ 67' ( '(&(0%(5 '(&(0%(5 683(56(',1* 683(56(',1*0,/ 67' '0,/ 67' ' 129(0%(5 129(0%(5 '(3$570(17 2) '()(16('(3$570(17 2) '()(16(7(67 0(7+2' 67$1'$5'7(67 0(7+2' 67$1'$5'0,&52&,5&8,760,&52&,5&8,76$06& 1 $ )6& ',675,%87,21 67$7(0(17 $',675,%87,21 67$7(0(17 $ $SSURYHG IRU SXEOLF UHOHDVH GLVWULEXWLRQ LV XQOLPLWHG $SSURYHG IRU SXEOLF UHOHDVH GLVWULEXWLRQ LV XQOLPLWHG 7KH GRFXPHQWDWLRQ DQG SURFHVVFRQYHUVLRQ PHDVXUHV QHFHVVDU\ WRFRPSO\ ZLWK WKLV UHYLVLRQ VKDOO EHFRPSOHWHG E\ 0D\ ,1&+ 3281',1&+ 3281'MIL-STD-883 EiiFOREWORD1. This military Standard is approved for use by all Departments and Agencies of the Department of Defense.))))))))))))))))))))))))))))

2 *2. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving thisdocument should be addressed to: Defense Supply Center Columbus, Box 3990, Columbus, OH 43216-5000, by usingthe self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document orby Intended use of or reference to Government Non-Government Order of , SYMBOLS, AND Abbreviations, symbols, and Numbering Test Test sample Test General 16 FIGURESFIGURE1.

3 Orientation of noncylindrical microelectronic devices to direction of applied 102. Orientation of cylindrical microelectronic device to direction of applied 11 MIL-STD-883 EivTEST methods Method NO. ENVIRONMENTAL TESTS1001 Barometric pressure, reduced (altitude operation)1002 Immersion1003 Insulation Moisture Steady state life1006 Intermittent life1007 Agree Stabilization Salt atmosphere (corrosion) Thermal Thermal characteristics1013 Dew test1016 Life/reliability characterization Neutron Internal water-vapor Ionizing radiation (total dose) test Dose rate induced latchup test Dose rate upset testing of digital microcircuits1022 Mosfet threshold Dose rate response of linear Preseal burn-in1031 Thin film corrosion Package induced soft error test procedure (due to alpha particles)1033 Endurance life test1034 Die penetrant test (for plastic devices) MECHANICAL Constant Mechanical Lead Vibration Vibration Vibration, variable Visual and External visual (monolithic) Bond strength (destructive bond pull test)

4 Internal visual inspection for DPA2014 Internal visual and mechanical* to solvents2016 Physical Internal visual (hybrid) Scanning electron microscope (SEM) inspection of Die shear Particle impact noise detection testMIL-STD-883 EvTEST METHODSMETHOD NO. MECHANICAL Glassivation layer Wetting balance Nondestructive bond Lid torque for glass-frit-sealed Adhesion of lead finish2026 Random Substrate attach Pin grid package destructive lead pull test2029 Ceramic chip carrier bond strength2030 Ultrasonic inspection of die Flip chip pull-off Visual inspection of passive elements2035 Ultrasonic inspection of TAB bonds ELECTRICAL tests (DIGITAL)

5 Drive source, Load Delay Transition time Power supply High level output Low level output Breakdown voltage, input or Input current, low Input current, high short circuit Terminal Noise margin measurements for digital microelectronic devices3014 Functional Electrostatic discharge sensitivity classification3016 Activation time verification3017 Microelectronics package digital signal transmission3018 Crosstalk measurements for digital microelectronic device Ground and power supply impedance measurements for digital microelectronics device packages3020 High impedance (off-state) low-level output leakage current3021 High impedance (off-state) high-level output leakage current3022 Input clamp voltage3023 Static latch-up measurements for digital CMOS microelectronic devices3024 Simultaneous switching noise measurements for digital microelectronic devicesELECTRICAL tests (LINEAR) Input offset voltage and current and bias Phase margin and slew rate Common mode input voltage rangeCommon mode rejection ratioSupply voltage rejection Open loop Output Power gain and noise figure4007 Automatic gain control rangeMIL-STD-883 EviTEST METHODSMETHOD NO.

6 TEST PROCEDURES5001 Parameter mean value Parameter distribution control5003 Failure analysis procedures for and quality conformance procedures5006 Limit Wafer lot Test procedures for hybrid and multichip Destructive physical procedures for custom monolithic Evaluation and acceptance procedures for polymeric Fault coverage measurement for digital fabrication control and wafer acceptance procedures for processed GaAs SCOPE * Purpose. This Standard establishes uniform methods , controls, and procedures for testing microelectronic devicessuitable for use within Military and Aerospace electronic systems including basic environmental tests to determine resistance todeleterious effects of natural elements and conditions surrounding military and space operations; mechanical and electrical tests ;workmanship and training procedures; and such other controls and constraints as have been deemed necessary to ensure auniform level of quality and reliability suitable to the intended applications of those devices.

7 For the purpose of this Standard , theterm "devices" includes such items as monolithic, multichip, film and hybrid microcircuits, microcircuit arrays, and the elementsfrom which the circuits and arrays are formed. This Standard is intended to apply only to microelectronic devices. The testmethods, controls, and procedures described herein have been prepared to serve several purposes:a. To specify suitable conditions obtainable in the laboratory and at the device level which give test results equivalent to theactual service conditions existing in the field, and to obtain reproducibility of the results of tests . The tests describedherein are not to be interpreted as an exact and conclusive representation of actual service operation in any onegeographic or outer space location, since it is known that the only true test for operation in a specific application andlocation is an actual service test under the same To describe in one Standard all of the test methods of a similar character which now appear in the various joint-servicesand NASA microelectronic device specifications, so that these methods may be kept uniform and thus result inconservation of equipment, manhours, and testing facilities.

8 In achieving this objective, it is necessary to make each ofthe general tests adaptable to a broad range of provide for a level of uniformity of physical, electrical and environmental testing; manufacturing controls andworkmanship; and materials to ensure consistent quality and reliability among all devices screened in accordance withthis Intended use of or reference to MIL-STD-883. When this document is referenced or used in conjunction with theprocessing and testing of JAN devices in conformance with the requirements of appendix A ofMIL-PRF-38535, QML devices in conformance with MIL-PRF-38535 or non-JAN devices in accordance with or , such processing and testing shall be in full conformance with all the applicable general requirements and those of thespecifically referenced test methods and contracts negotiated prior to 31 December 1984, device types that have been classified as manufacturer's 883 (B or S)

9 Product prior to 31 December 1984 shall not have to meet or contracts as of the 31 December 1984, previously negotiated add-ons to these contracts, and future spares for thesecontracts may continue to use device types which were classified as manufacturer's 883(B or S) prior to 31 December contracts, and any device types classified as compliant to MIL-STD-883 after 31 December 1984 shall comply with Any devices meeting only the provisions of are noncompliant to Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices. When any manufacturer,contractor, subcontractor, or original equipment manufacturer requires or claims a non-JAN part compliant with MIL-STD-883, allprovisions of Appendix A of MIL-PRF-38535 shall be met.

10 In addition, manufacturers that have produced or are producingproducts in accordance with are subject to a Government compliance validation audit on a drop-in basis with a minimumof notice. Such processing and testing shall be in compliance with all of the applicable general controls and requirements definedherein and those of the specifically referenced test methods and procedures with no reinterpretations, deviations or omissionsexcept as specifically allowed in the device specification or Standard microcircuit drawing covering the same generic device. Deviations specifically granted in the device specification or Standard microcircuit drawing may also be applied to devicesmanufactured in the same process, to the same design criteria, and using elements of the same microcircuit group as thoseused for devices covered by the device specification or Standard microcircuit drawing.