Optocoupler, Phototransistor Output, Low Input Current, 4 ...

1 Semiconductors Rev. , 13-Oct-151 Document Number: 82405 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT , Phototransistor Output, Low Input Current, 4 Pin LSOP, Long Creepage Mini-Flat PackageDESCRIPTIONThe vol618a has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar Phototransistor detector, and is incorporated in a 4 pin LSOP wide body features a high current transfer ratio, low coupling capacitance, and high isolation coupling device is designed for signal transmission between two electrically separated Low profile package High collector emitter voltage, VCEO = 80 V Isolation test voltage, 5000 VRMS Isolation voltage VIORM = 1050 Vpeak Low coupling capacitance High common mode transient immunity Material categorization.

2 For definitions of compliance please see Telecom Industrial controls Battery powered equipment Office machines Programmable controllersAGENCY APPROVALS(All parts are certified under base model vol618a ) UL1577, file no. E76222 cUL CSA bulletin 5A, double protection DIN EN 60747-5-5 (VDE 0884-5), available with option 1 BSI: EN 60065:2002, EN 60950-1:2006 FIMKO EN60950-1 CQC: GB8898-2011, INFORMATIONVOL618A-#X001 TPART NUMBERCTR BINPACKAGE OPTION TAPE AND REELAGENCY CERTIFIED/PACKAGECTR (%)1 mAUL, cUL, BSI, FIMKO, CQC50 to 60063 to 125100 to 2004 pin LSOP, mini-flat, long creepageVOL618 ATVOL618A-2 TVOL618A-3 TUL, cUL, BSI, FIMKO, CQC, VDE (option 1)50 to 60063 to 125100 to 2004 pin LSOP, mini-flat, long Semiconductors Rev. , 13-Oct-152 Document Number: 82405 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Stresses in excess of the absolute maximum ratings can cause permanent damage to the device.

3 Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability.(1)Refer to reflow profile for soldering conditions for surface mounted devices. Fig. 1 - Total Power Dissipation vs. Ambient TemperatureNote Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified)PARAMETERTEST CONDITIONSYMBOLVALUEUNITINPUTR everse voltageVR6 VPower dissipationPdiss100mWForward currentIF60mAForward surge currenttp < 10 temperatureTj125 COUTPUTC ollector emitter voltageVCEO80 VEmitter collector voltageVECO7 VCollector currentIC50mAtp/T = , tp < 10 msIC100mAPower dissipationPdiss150mWJunction temperatureTj125 CCOUPLERT otal power dissipationPtot250mWStorage temperature rangeTstg-55 to +125 CAmbient temperature rangeTamb-55 to +110 CSoldering temperature (1) 10 sTsld260 CELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)

4 PARAMETERTEST Forward voltageIF = 5 = 0 V, f = 1 MHzCO-45-pFReverse currentVR = 6 VIR--100 AOUTPUTC ollector emitter leakage currentVCE = 10 V, IF = 0 AICEO-10200nACollector emitter capacitanceVCE = 5 V, f = 1 MHzCCE-7-pFCOUPLERC ollector emitter saturation voltageIC = mA, IF = 1 = mA, IF = 1 = mA, IF = 1 capacitancef = 1 50 100 150 200 250 300 0 20 40 60 80 100 120 Ptot - Total Power Dissipation (mW) Tamb - Ambient Temperature ( C) Coupled device Phototransistor IR-diode Semiconductors Rev. , 13-Oct-153 Document Number: 82405 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 2 - Test CircuitFig. 3 - Test Circuit and WaveformsNote According to DIN EN 60747-5-5 (VDE 0884), , (see figure 4).

5 This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective TRANSFER RATIO (Tamb = 25 C, unless otherwise specified) PARAMETERTEST = 1 mA, VCE = 5 VVOL618 ACTR50-600% vol618a -2 CTR63-125% vol618a -3 CTR100-200%SWITCHING CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETERTEST on timeVCC = 5 V, IC = 2 mA, RL = 100 ton-6- sRise timeVCC = 5 V, IC = 2 mA, RL = 100 sTurn off timeVCC = 5 V, IC = 2 mA, RL = 100 sFall timeVCC = 5 V, IC = 2 mA, RL = 100 tf-5- sisfh618a_10 InputVOUTVCC = 5 VRLisfh618a_1210 %90 % Input pulseOutput pulsetrtontftoffSAFETY AND INSULATION RATINGSPARAMETERTEST CONDITIONSYMBOLVALUEUNITP artial discharge test voltage - routine test100 %, ttest = 1 sVpd2kVpeakPartial discharge test voltage - lot test (sample test)tTr = 60 s, ttest = 10 s,(see figure 4)

6 Test voltage between emitter and detectort = 1 minVISO5000 VRMSI nsulation voltageVIORM1050 VpeakInsulation resistanceVIO = 500 VDC, Tamb = 25 CRIO1012 VIO = 500 VDC, Tamb = 100 CRIO1011 VIO = 500 VDC, Tamb = 150 C(construction test only)RIO109 Safety rating - maximum Input currentIsi130mASafety rating - maximum power dissipationPSO265mWRated impulse voltageVIOTM8kVSafety rating - maximum ambient temperatureTsi150 CComparative tracking indexCTI275mmClearance distance8mmCreepage distance8mmInsulation distance (internal) Semiconductors Rev. , 13-Oct-154 Document Number: 82405 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 4 - Derating DiagramFig. 5 - Test Pulse Diagram for Sample Test according toDIN EN 60747-5-5 TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)Fig.

7 6 - Forward Voltage vs. Forward Current Fig. 7 - Collector Current vs. Collector Emitter Voltage (non-saturated)Fig. 8 - Collector Emitter Current vs. Ambient TemperatureFig. 9 - Collector Current vs. Collector Emitter Voltage (saturated)0255075125050100150200300 Tsi - Safety Temperature ( C)150100250 PhototransistorPSO (mW)IR-diodeIsi (mA)t13930t1, t2 = 1 s to 10 s t3, t4 = 1 s ttest = 10 s tstres = 12 s VIOTMVpdVIOWMVIORM0t1ttesttTr = 60 s 1 10 100 IF - Forward Current (mA) VF - Forward Voltage (V) Tamb = 110 C Tamb = 75 C Tamb = 25 C Tamb = 0 C Tamb = -55 C 0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 9 10 IC - Collector Current (mA) VCE - Collector Emitter Voltage (non-sat) (V) IF = 1 mA IF = 10 mA IF = 5 mA IF = 15 mA IF = 20 mA IF = 25 mA 1 10 100 1000 10 000 -60 -40 -20 020 40 60 80 100 120 ICE0 - Leakage Current (nA) Tamb - Ambient Temperature ( C)

8 IF = 0 mA VCE = 40 V VCE = 24 V VCE = 12 V 0 5 10 15 20 25 30 35 IC - Collector Current (mA) VCE - Collector Emitter Voltage (V) IF = 25 mA IF = 10 mA IF = mA IF = 2 mA IF = 5 mA IF = 1 mA Semiconductors Rev. , 13-Oct-155 Document Number: 82405 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 10 - Normalized Current Transfer Ratio vs. Ambient Temperature (saturated)Fig. 11 - Normalized Current Transfer Ratio vs. Ambient Temperature (non-saturated)Fig. 12 - Current Transfer Ratio vs. Forward Current (saturated) Normalized to 1 mA at 25 CFig. 13 - Current Transfer Ratio vs. Forward Current (non-saturated) Normalized to 1 mA at 25 CFig. 14 - fCTR vs. Phase AngleFig. 15 - Frequency (-3 dB) vs. Collector Current 0 -60 -40 -20 020 40 60 80 100 120 NCTR - Normalized CTR (sat) Tamb - Ambient Temperature ( C) Normalized to CTR value:IF = 1 mA, VCE = 5 V, Tamb = 25 C 0 NCTR - Normalized CTR (non-saturated) Tamb - Ambient Temperature ( C) Normalized to CTR value:IF = 1 mA, VCE = 5 V, Tamb = 25 C-60 -40 -20 020 40 60 80 100 1 10 100 NCTR - Normalized CTR (NS) IF - Forward Current (mA) Tamb = 0 C Tamb = 110 C Tamb = -55 CTamb = 25 C Normalized to:IF = 1 mA, VCE = 5 1 10 100 NCTR - Normalized CTR (sat)IF - Forward Current (mA) Tamb = 0 C Tamb= -55 C Tamb = 25 C Tamb = 110 C VCE = VNormalizedto.

9 IF = 5 mA,VCE = 5 V-160-140-120-100-80-60-40-200 1 10 100 1000 Phase Angle (deg) VCE= 5 V RL = 100 RL = 1000 f - Frequency (kHz)1 10 100 1000 1 10 100 fCTR (kHz) IC (mA) VCC = 5 V Semiconductors Rev. , 13-Oct-156 Document Number: 82405 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 16 - Switching Time vs. Load ResistanceFig. 17 - Collector Emitter Saturation Voltage vs. Collector CurrentFig. 18 - Turn-On/Turn-Off Time vs. Forward CurrentFig. 19 - Voltage Gain vs. Cut-off 1 10 100 10000 5 10 1520ton, toff Switching Time ( s) RL - Load Resistance (k ) VCE = 5 V, Ic = 2 mA toff ( s) ton ( s) - Collector Emitter Saturation Voltage (V)IC - Collector Current (mA)100 CTR = 50 % used20 % used95 1102810 % used0101501020304050IF - Forward Current (mA)2095 11031ton/toff - Turn-On/Turn-Off Time ( s)Saturated operationVS = 5 VRL = 1 k toffton5-40-35-30-25-20-15-10-50 1 10 100 1000 Voltage Gain VCE = 5 V RL = 100 RL = 1000 f - Frequency (kHz) Semiconductors Rev.

10 , 13-Oct-157 Document Number: 82405 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT DIMENSIONS (in millimeters)PACKAGE MARKING (example of vol618a -3X001T)Notes Only option 1 is reflected in the package marking with the characters X1 . Tape and reel suffix (T) is not part of the package AND REEL DIMENSIONS (in millimeters)Fig. 20 - Reel Dimensions (3000 units per reel)Fig. 21 - Tape + - drawingsaccording to no. 1 + - + - YWW 68 ESD stickerTape slotin core330(13")Regular, specialor bar code label1799922662technical drawingsaccording to Direction of pulling Semiconductors Rev. , 13-Oct-158 Document Number: 82405 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT PROFILEFig.