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Optocoupler, Phototransistor Output, Low Input Current

SFH618A, Semiconductors Rev. , 07-Mar-20231 Document Number: 83673 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT , Phototransistor Output, Low Input CurrentLINKS TO ADDITIONAL RESOURCESDESCRIPTIONThe SFH618A (DIP) and SFH6186 (SMD) feature a high Current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared diode emitter, which is optically coupled to silicon planar Phototransistor detector, and is incorporated in a plastic DIP-4 or SMD coupling devices are designed for signal transmission between two electrically separated couplers are end-stackable with mm lead spacing.

Collector emitter leakage current VCE = 10 V ICEO - 10 200 nA Collector emitter capacitance V CE = 5 V, f = 1 MHz C CE -7 - pF Thermal resistance R thja - 500 - K/W

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Transcription of Optocoupler, Phototransistor Output, Low Input Current

1 SFH618A, Semiconductors Rev. , 07-Mar-20231 Document Number: 83673 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT , Phototransistor Output, Low Input CurrentLINKS TO ADDITIONAL RESOURCESDESCRIPTIONThe SFH618A (DIP) and SFH6186 (SMD) feature a high Current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared diode emitter, which is optically coupled to silicon planar Phototransistor detector, and is incorporated in a plastic DIP-4 or SMD coupling devices are designed for signal transmission between two electrically separated couplers are end-stackable with mm lead spacing.

2 Creepage and clearance distances of > 8 mm achieved with option Good CTR linearity depending on forward Current Low CTR degradation High collector emitter voltage, VCEO = 55 V Isolation test voltage, 5300 VRMS Low coupling capacitance End stackable, " ( mm) spacing High common mode transient immunity Material categorization: for definitions of compliance please see Telecom Industrial controls Battery powered equipment Office machinesAGENCY APPROVALSThe safety application model number covering all products in this datasheet is SFH618A. This model number should be used when consulting safety agency documents.

3 UL cUL DIN EN 60747-5-5 (VDE 0884-5) available with option 1 BSI CQC FIMKON otes Additional options may be possible, please contact sales office(1)Also available in tubes, do not put T to the endECAC12431111333 DDD3D3D ModelsDesign ToolsModelsFootprintsSchematicsORDERING INFORMATIONSFH618# - #X0##TPART NUMBER CTRBINPACKAGE OPTION TAPE AND REELAGENCY CERTIFIED / PACKAGECTR (%)1 mAUL, cUL, BSI, FIMKO63 to 125100 to 200160 to 320250 to 500 DIP-4 SFH618A-2 SFH618A-3 SFH618A-4 SFH618A-5 DIP-4, 400 mil, option 6-SFH618A-3X006--SMD-4, option 7---SFH618A-5X007T (1)SMD-4, option 9 SFH6186-2T (1)SFH6186-3T (1), SFH6186-3T1 SFH6186-4T (1)SFH6186-5T (1), SFH6186-5T1UL, cUL, BSI, FIMKO, VDE (option 1)63 to 125100 to 200160 to 320250 to 500 DIP-4-SFH618A-3X001 SFH618A-4X001-DIP-4, 400 mil, option 6-SFH618A-3X016 SFH618A-4X016 SFH618A-5X016 SMD-4, option 7-SFH618A-3X017T (1)-SFH618A-5X017T (1)SMD-4, option 9-SFH6186-3X001T (1), SFH6186-3X001T1 SFH6186-4X001 TSFH6186-5X001T (1)> mm> mmDIP-# Option 7 Option 6 Option 9 SFH618A, Semiconductors Rev.

4 , 07-Mar-20232 Document Number: 83673 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect 1 - Permissible Power Dissipation vs. Ambient TemperatureABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified)PARAMETERTEST CONDITIONSYMBOLVALUEUNITINPUTR everse voltageVR6 VPower dissipationPdiss70mWForward currentIF60mAOUTPUTC ollector emitter voltageVCEO55 VEmitter collector voltageVECO7 VCollector currentIC50mAtp 1 msIC100mAPower dissipationPdiss150mWCOUPLERS torage temperature rangeTstg-55 to +150 CAmbient temperature rangeTamb-55 to +100 CJunction temperatureTj125 CSoldering temperaturemax.

5 10 s, dip soldering distance to seating plane mmTsld260 C101001000100000501001502000 255075100125 Axis Title1st line2nd line2nd linePtot- Total Power Dissipation (mW)Tamb- Ambient Temperature ( C)LEDD etectorSFH618A, Semiconductors Rev. , 07-Mar-20233 Document Number: 83673 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETERTEST Forward voltageIF = 5 currentVR = 6 ACapacitanceVR = 0 V, f = 1 MHzCO-25-pFThermal resistanceRthja-1070-K/WOUTPUTC ollector emitter leakage currentVCE = 10 VICEO-10200nACollector emitter capacitanceVCE = 5 V, f = 1 MHzCCE-7-pFThermal resistanceRthja-500-K/WCOUPLERC ollector emitter saturation voltageIC = mA, IF = 1 = mA, IF = 1 = mA, IF = 1 = mA, IF = 1 pFCURRENT TRANSFER RATIO (Tamb = 25 C, unless otherwise specified)

6 PARAMETERTEST = 1 mA, VCE = VSFH618A-2 CTR63-125%SFH6186-2 CTR63-125%IF = mA, VCE = VSFH618A-2 CTR3275-%SFH6186-2 CTR3275-%IF = 1 mA, VCE = VSFH618A-3 CTR100-200%SFH6186-3 CTR100-200%IF = mA, VCE = VSFH618A-3 CTR50120-%SFH6186-3 CTR50120-%IF = 1 mA, VCE = VSFH618A-4 CTR160-320%SFH6186-4 CTR160-320%IF = mA, VCE = VSFH618A-4 CTR80200-%SFH6186-4 CTR80200-%IF = 1 mA, VCE = VSFH618A-5 CTR250-500%SFH6186-5 CTR250-500%IF = mA, VCE = VSFH618A-5 CTR125300-%SFH6186-5 CTR125300-%SWITCHING CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)PARAMETERTEST on timeVCC = 5 V, IC = 2 mA, RL = 100 ton-6- sRise timeVCC = 5 V, IC = 2 mA, RL = 100 sTurn off timeVCC = 5 V, IC = 2 mA, RL = 100 sFall timeVCC = 5 V, IC = 2 mA, RL = 100 tf-5- sSFH618A, Semiconductors Rev.

7 , 07-Mar-20234 Document Number: 83673 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 2 - Test CircuitFig. 3 - Parameter and Limit DefinitionNote As per DIN EN 60747-5-5, , this optocoupler is suitable for safe electrical insulation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) Fig. 4 - Forward Voltage vs. Forward CurrentFig. 5 - Collector Current vs. Collector Emitter Voltageisfh618a_10 InputVOUTVCC = 5 VRL2298690 %10 % Input pulseOutput pulsetrtontftoff5 AND INSULATION RATINGS PARAMETERTEST CONDITIONSYMBOLVALUEUNITC limatic classificationAccording to IEC 68 part 155 / 100 / 21 Pollution degreeAccording to DIN VDE 01092 Comparative tracking index Insulation group IIIaCTI175 Maximum rated withstanding isolation voltageAccording to UL1577, t = 1 min VISO4420 VRMST ested withstanding isolation voltageAccording to UL1577.

8 T = 1 s VISO5300 VRMSM aximum transient isolation voltageAccording to DIN EN 60747-5-5 VIOTM10 000 VpeakMaximum repetitive peak isolation voltageAccording to DIN EN 60747-5-5 VIORM890 VpeakIsolation resistanceTamb = 25 C, VIO = 500 VRIO 1012 Tamb = 100 C, VIO = 500 VRIO 1011 Output safety power PSO400mWInput safety Current ISI400mAInput safety temperature TSI275 CCreepage distanceDIP-4 7mmClearance distance 7mmCreepage distanceDIP-4, 400 mil, option 6 8mmClearance distance 8mmCreepage distanceSMD-4, option 7 and option 9 7mmClearance distance 7mmInsulation thickness DTI 1 10 100 IF - Forward Current (mA) VF - Forward Voltage (V) Tamb = 110 C Tamb = 75 C Tamb = 25 C Tamb = 0 C Tamb = - 55 C 0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 9 10 IC - Collector Current (mA) VCE- Collector Emitter Voltage (V)IF = 1 mA IF = 10 mA IF = 5 mA IF = 15 mA IF = 20 mA IF = 25 mA SFH618A, Semiconductors Rev.

9 , 07-Mar-20235 Document Number: 83673 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 6 - Collector Emitter Current vs. Ambient TemperatureFig. 7 - Collector Current vs. Collector Emitter VoltageFig. 8 - Collector Emitter Voltage vs. Ambient Temperature Fig. 9 - Normalized Current Transfer Ratio Temperature (sat.)Fig. 10 - Normalized Current Transfer Ratio Temperature (non-sat.)Fig. 11 - Current Transfer Ratio vs. Forward Current (sat.) 000 ICE0- Leakage Current (nA)Tamb- Ambient Temperature ( C)IF= 0 mAVCE= 24 VVCE= 12 V-6020 40 60 80 100 120 VCE= 40 V0 5 10 15 20 25 30 35 IC - Collector Current (mA) VCE - Collector Emitter Voltage (V) IF = 25 mA IF = 10 mA IF = mA IF = 2 mA IF = 5 mA IF = 1 mA -60 -40 -20 020 40 60 80 100 120 VCEsat - Collector Emitter Voltage (V) Tamb - Ambient Temperature ( C) IF = 1 mA 0 NCTR - Normalized CTR (sat) Tamb - Ambient Temperature ( C) Normalized to CTR value.

10 IF = 1 mA, VCE = 5 V, Tamb = 25 C -60 -40 -20 020 40 60 80 100 120 VCE = V0 -60 -40 -20 020 40 60 80 100 120 NCTR - Normalized CTR (non-saturated) Tamb - Ambient Temperature ( C) Normalized to CTR value: IF = 1 mA, VCE = 5 V, Tamb = 25 C VCE = 1 10 10


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