Positive Tone Photosensitive Polyimide Coatings

1 1 Toray Industries, Tone Photosensitive Polyimide Coatings Photoneece TM2PW-series introduction Semiconductor Package Structure Why is PI necessary forsemiconductor s package?Why is POSI PI the most adjustableto semiconductor s process?Why is PW-series the best solution ofyour problems? Semiconductor Process Solution examples 3 Semiconductor Package or (stacked type) chip (Bump structure) Level Package(WLP)PolyimideMold compoundLead flamePolyimideMold compoundSolder bumpGold bumpGold BumpPolyimideRedistributedline(metal)Pol yimideThe reason why PI is necessary is---to protect filler attack---to increase package s reliability(buffer effectiveness)The reason why PI is necessary is---to protect filler attack---to increase package s reliability(buffer effectiveness)---to protect upper IC attackThe reason why PI is necessary is---to protect IC substrate(PI actslike encapsulation)

2 ---to increase adhesion to ACFThe reason why PI is necessary is---to protect IC substrate(PI actslike encapsulation---to increase adhesion to ACF---to distribute line4 Semiconductor ProcessphotoresistpassivationAlSiPhotore sist coatingPhotoresist developingPassivation dry-etchingPhotoresist strippingPI coatingPhotoresist coatingPhotoresist &PI developingPhotoresist strippingPI curingPI coatingPI developingPI curingPassivation dry-etchingexposureexposureexposureNon-p hotosensitive PIphotosensitive PIPOSI PSPI--alkaline solvent--high resolutionNEGA PSPI--organic solvent--low resolutionThe most adjustable!The number of processis fewer than timesexposure1 time5 Solution examplesThe features of PW-seriesHigh chemical resistanceHigh adhesion strengthGood taper shapeUseful for Bump & WLPLow residual stressUseful for 12 waferHigh resolutionLow priceUseful for advanced memory & logic(Advanced memory= fuse box size is about 5um,Advanced Logic= left pattern width is 7um)Useful for every device using NEGA SolutionIs there any problems about above matters with you?)

3 We can provide solutions by recommending reason why PW-series is the most suitable for all applicationsis that PW-series has following features solving your Marketing Data7 IICost reduction of process and materials Requirements Availability for aqueous development(TMAH )Low temperature curing process/Good photo-speed Long storage lifeHigh resistance for dry etching process(1 mask process)Customer s Requirement Trends for PI6inch8inch12inchTSOPQFPPBGASTACKED BGAFBGAFCBGABARE CHIP BUMP IC WLPW afer Size IHigher package reliability Requirements High electric and thermal resistanceHigh adhesive strengthIIIS emiconductor and package downsizing Requirements Higher resolutionHigher adhesion to passivation layer V12inch wafer application Requirements Good photo-speedLow residual stress and CTEIVCSP(WLP) and bump application Requirements Excellent chemical resistanceHigh adhesion to various materialsAvailability for multi layer(High Tg)Package DensityTCP4inch8PI s Technical TrendNon Photosensitive PI (negative tone)Non Photosensitive PI ( Positive tone) Photosensitive PI (negative tone)

4 Photosensitive PI ( Positive tone)To stop hydrazine processTo be fine resolutionTo reduce processBut it has many problems such organic developmentneeds HMDS for increasing adhesionhas less film & liquid propertieshas out gas reduce cost(process & materials)To be high resolutionTo prevent deposit on side-wallTo lower out gasTo increase adhesion to MC and passivation layerTo be environmental vanished198019902000 Solution of the problemsIt s becoming standard!9 Features of PW-seriesIHigh package reliabilityHigh electric and thermal resistanceHigh adhesion strengthIICost reduction of process and materialsAvailability for aqueous developmentLow temperature curing processGood photo speedLong storage lifeHigh resistance for dry etching processIIIS emiconductor and package downsizingHigh resolutionHigh adhesion strength to passivation layerIVCSP and bump applicationExcellent chemical resistanceHigh adhesion strength to various materialsAvailability for multi layerV12 inch applicationGood photo speedLow residual stress and CTEC ustomer s requirementSatisfying IC s requirement (Pure PI film)Excellent adhesion strength to MC and Si,SiN,TEOS etc.

5 Available for TMAH for curing under 280 CThe best photo speed in Positive tone PSPIS table at room temperatureExcellent resistance for 1 mask processThe highest resolution(3um at 8um thickness)Excellent adhesive strength of even 5um line pattern to SiNThe highest chemical resistance in all PSPIE xcellent adhesion strength to many metals(Cu,Al,Ni,Cr,Ti,Au,etc)High Tg and stability during curing processThe best photo speed in positivetone PSPI less than 40 MPa and 36ppm/ CPW-series is(has)..We can show you more detailed informationin the following Technical Data 10 The best solution example If you face following we can provide you with solutions such non Photosensitive customers:Poor viscous stability or solution stabilityLow resolution(around 30um )Numerous processFor negativetone Photosensitive customers:Expensive material costLow resolution(about 10um )Deposit on side-wallOut gasWeak adhesion to MC and passivation layerOrganic developmentFor PBO customers.

6 High CTE & residual stressLow chemical resistancePoor adhesion to passivaition layerLess storage stabilityNarrow cure process latitudeExcellent viscous stabilityFar higher resolution(3um )Photoresist process reductionModerate PI price and availability for aqueous developmentHigher resolution(3um )Far less out gas included and good taper shapeFar less out gas includedExcellent adhesion to that(not to need HMDS)Availability for aqueous developmentThe lowest CTE & residual stress in all PSPIE xcellent chemical resistance(no crack during chemical process)Excellent adhesion to passivationlayer(even if 5um line is OK)Excellent storage stability(no particle after )Wider cure process window(available for curing in air)From PI customer s view11 From IC manufacturer s viewThe best solution example For buffer Coatings application<Memory> <Logic>For CSP & bump application(The present)A few padsFuse box 10 20umTSOPFuse boxPadLeft patternPadCSP & bump is very promising can realize package shrinkage,improvement of electric properties, and cost reduction.

7 Au bumpRedestributionrouteUnder bump metalPI layerSisubstratePI is/will be required for following things Higher resolution(3-5um )Higher chemical resistance for CSP & adhesive strength to chemical resistance for HF solution during wet etching before dry adhesion strength to various chemical resistance for various etchant, flux, cleaner, solvent emphasize this field(The future)A few padsFuse box 5 20umCSP(The present)A lot of padsLeft pattern width 10umQFP(The future)A lot of padsLeft pattern width 5umCSP12 DRAMF lashSRAMMRAML ogic(Graphic,LCDdriver,ChipSet,MPU,etc)S ystem LSITSOPBump ,WLPC onventional propertiesElectric propertyThermal propertyAdhesion to MC & propertiesProtective property forfiiler in MCLow temperature curigHigher Adhesion to SiNHigh chemical resistance(HF)Conventional properties+Low temperature curingHigher Adhesion to SiNHigh chemical resistanceHigh chemical resistance(flux + cleaner,etchant,solvent)DevicetrendPacka getrendFrom IC manufacturer s viewThe best solution example Higher resolutionIn the future, you ll need is only PI which can satisfy these demands.

8 13PW-series basic propertiesfilm propertyPW-1000PW-1200PW-1500PW-2100 TypeStandardThick Film High Chemical High Photo-Applicable Resistance Sensitivityviscosity1,5001,5001,5001,500 total solid content38404040-16 Cmonth99994 Cmonth6666room temp. month1111thickness3-73-103-73-7tensile strength130150150150250 C cure%-202020320 C cure%30202020350 C cure%20201020380 C cure%10201020400 C cure%10201020young's C cure MPa-263530320 C cure MPa283638365% weight loss C cure C-230250235320 C cure C270305320310350 C cure C270305380310380 C cure C270305400315400 C cure C270305430320dielectric resistance>10^16>10^16>10^16>10^16surfac e resistance>10^16>10^16>10-16>10-16breakd own voltage>420>420>420>420water (TMA)film propertyliquid propertyresidual stresslife timeelogationkV/mm- cm cm2%Gpa(320 C)ppm/ C C(320 C) (320 C)

9 Um14PW-series basic propertiesPW-1000PW-1200PW-1500PW-2100co atspinspinspinspinprebake120/3120/3120/3 115/33ummJ/cm21751501501005ummJ/cm240030 03001507ummJ/cm2650550550250 PEBNot requiredNot requiredNot requiredNot requireddevelop20-12020-12020-12020-120c ure320-380250-380250-380250-380 NMPrt/15minno changeno changeno changeno changeGBLrt/15minno changeno changeno changeno changeELrt/15minno changeno changeno changeno changeacetone rt/15mincrackno changeno changeno changePGMEA rt/15minno changeno changeno changeno changeresist stripperDMSO/mono-ethanolamine90 C/30min50% thickness decrease 10% thickness decrease 10% thickness decrease 10% thickness decrease25%NaOH 40 C/10minno changeno changeno changeno change10%KOH 40 C/10minno changeno changeno changeno changeH2SO4/H2O2 40 C/10minno changeno changeno changeno change1%HF /5minno changeno changeno changeno changefluxDeltalux533 290 C/30seccrackno changeno changeno changecleanerPine-arfa 40 C/30minno changeno changeno changeno changeprocess performancechemical resistancesec C/minexposuresolventalkakineetchantwitho ut HMDS C/min152.

10 Technical Data160 501000 501000 50100 10000 Oxygen 1100250 PCT treatment time CFinal Curing Temperature C CCure Koyo-Thermo Systems CLH-21 CDPCT :121 C, 2 atm Adhesion to Substrate (Si and SiN)170hr 100hr 0hr 100hr 0hr 100hrno treatment0/100 0/100 0/100 90/100 0/100 0/1000/100 0/100 0/100 30/100 0/100 0/100CF4(RIE)0/100 0/100 0/100 0/100 0/100 0/100AR(Spatter)0/100 0/100 0/100 0/100 0/100 0/100treatment Ti O2 (Plasma)AdhesionAdhesion to Metals(Cu,Ti,Cr)Metals is made by spattering process after each method:Peeling test after 0hr,100hr at 150 C(peeling pcs/total pcs)1805101520253035400 50 100 150 200 250 300 350 Temperature C Residual Stress MPa HeatingCoolingNon Photosensitive P I (35 MPa)PW-1000 Residual Stress19 MassChemical Groupm/z aRT 160 C 30min 160 C 350 C 60min350 C 500 C18H2O (Imidization (Sensitizer Solvent gas (Sensitizer) (<-45) PGMEA and Organic gas (<-58)Organic gas (Sensitizzer) (<-87)Organic gas (Sensitizer) , Organic gas (Sensitizer) Amount Negative Type PolyimideMassChemic))