Power MOSFET - Vishay

1 IRL540, SiHL540. Vishay Siliconix Power MOSFET . FEATURES. PRODUCT SUMMARY. Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( ) VGS = V Logic-Level Gate Drive RoHS*. COMPLIANT. Qg (Max.) (nC) 64. RDS(on) Specified at VGS = 4 V and 5 V. Qgs (nC) 175 C Operating Temperature Qgd (nC) 27. Fast Switching Configuration Single Ease of Paralleling D Compliant to RoHS Directive 2002/95/EC. TO-220AB. DESCRIPTION. Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, G. ruggedized device design, low on-resistance and cost-effectiveness. S. D The TO-220AB package is universally preferred for all G S commercial-industrial applications at Power dissipation N-Channel MOSFET levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION. Package TO-220AB. IRL540 PbF.

2 Lead (Pb)-free SiHL540-E3. IRL540. SnPb SiHL540. ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted). PARAMETER SYMBOL LIMIT UNIT. Drain-Source Voltage VDS 100. V. Gate-Source Voltage VGS 10. TC = 25 C 28. Continuous Drain Current VGS at V ID. TC = 100 C 20 A. Pulsed Drain Currenta IDM 110. Linear Derating Factor W/ C. Single Pulse Avalanche Energyb EAS 440 mJ. Avalanche Currenta IAR 28 A. Repetitive Avalanche Energya EAR 15 mJ. Maximum Power Dissipation TC = 25 C PD 150 W. Peak Diode Recovery dV/dtc dV/dt V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175. C. Soldering Recommendations (Peak Temperature) for 10 s 300d 10 lbf in Mounting Torque 6-32 or M3 screw N m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 C, L = 841 H, Rg = 25 , IAS = 28 A (see fig. 12c). c. ISD 28 A, dI/dt 170 A/ s, VDD VDS, TJ 175 C. d. mm from case.

3 * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91300 S11-0519-Rev. B, 21-Mar-11 1. This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT IRL540, SiHL540. Vishay Siliconix THERMAL RESISTANCE RATINGS. PARAMETER SYMBOL TYP. MAX. UNIT. Maximum Junction-to-Ambient RthJA - 62. Case-to-Sink, Flat, Greasd Surface RthCS - C/W. Maximum Junction-to-Case (Drain) RthJC - SPECIFICATIONS (TJ = 25 C, unless otherwise noted). PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT. Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 A 100 - - V. VDS Temperature Coefficient VDS/TJ Reference to 25 C, ID = 1 mA - - V/ C. Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 A - V. Gate-Source Leakage IGSS VGS = 10 V - - 100 nA. VDS = 100 V, VGS = 0 V - - 25. Zero Gate Voltage Drain Current IDSS A. VDS = 80 V, VGS = 0 V, TJ = 150 C - - 250.

4 VGS = V ID = 17 Ab - - Drain-Source On-State Resistance RDS(on) . VGS = V ID = 14 Ab - - Forward Transconductance gfs VDS = 50 V, ID = 17 A 12 - - S. Dynamic Input Capacitance Ciss - 2200 - VGS = 0 V, Output Capacitance Coss VDS = 25 V, - 560 - pF. f = MHz, see fig. 5. Reverse Transfer Capacitance Crss - 140 - Total Gate Charge Qg - - 64. ID = 28 A, VDS = 80 V, Gate-Source Charge Qgs VGS = V - - nC. see fig. 6 and 13b Gate-Drain Charge Qgd - - 27. Turn-On Delay Time td(on) - - Rise Time tr - 170 - VDD = 50 V, ID = 28 A, ns Turn-Off Delay Time td(off) Rg = , RD = , see fig. 10b - 35 - Fall Time tf - 80 - Between lead, D. Internal Drain Inductance LD - - 6 mm ( ") from package and center of G. nH. Internal Source Inductance LS die contact - - S. Drain-Source Body Diode Characteristics MOSFET symbol Continuous Source-Drain Diode Current IS D. - - 28. showing the A. integral reverse G. Pulsed Diode Forward Currenta ISM p - n junction diode S.

5 - - 110. Body Diode Voltage VSD TJ = 25 C, IS = 28 A, VGS = 0 Vb - - V. Body Diode Reverse Recovery Time trr - 200 260 ns TJ = 25 C, IF = 28 A, dI/dt = 100 A/ sb Body Diode Reverse Recovery Charge Qrr - C. Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD). Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; duty cycle 2 %. Document Number: 91300. 2 S11-0519-Rev. B, 21-Mar-11. This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT IRL540, SiHL540. Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted). Fig. 1 - Typical Output Characteristics, TC = 25 C Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics, TC = 175 C Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91300 S11-0519-Rev.

6 B, 21-Mar-11 3. This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT IRL540, SiHL540. Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area Document Number: 91300. 4 S11-0519-Rev. B, 21-Mar-11. This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT IRL540, SiHL540. Vishay Siliconix RD. VDS. VGS. RG. +. - VDD. 5V. Pulse width 1 s Duty factor %. Fig. 10a - Switching Time Test Circuit VDS. 90 %. 10 %. VGS. td(on) tr td(off) tf Fig. 9 - Maximum Safe Operating Area Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91300 S11-0519-Rev.

7 B, 21-Mar-11 5. This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT IRL540, SiHL540. Vishay Siliconix L. VDS VDS. Vary tp to obtain tp required IAS. VDD. RG +. V DD. - VDS. I AS. 5V. tp . IAS. Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as QG 50 k . VGS 12 V F. F. QGS QGD +. VDS. - VG. VGS. 3 mA. Charge IG ID. Current sampling resistors Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit Document Number: 91300. 6 S11-0519-Rev. B, 21-Mar-11. This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT IRL540, SiHL540. Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer - +.

8 - +. - Rg dV/dt controlled by Rg +. Driver same type as VDD. - ISD controlled by duty factor D . - device under test Driver gate drive Period D=. Period VGS = 10 Va lSD waveform Reverse recovery Body diode forward current current dI/dt VDS waveform Diode recovery dV/dt VDD. Re-applied voltage Body diode forward drop Inductor current Ripple 5 % ISD. Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see Document Number: 91300 S11-0519-Rev. B, 21-Mar-11 7. This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Package Information Vishay Siliconix TO-220-1.

9 A MILLIMETERS INCHES. E DIM. MIN. MAX. MIN. MAX. F. A P b Q. b(1) H(1). c D E D. e e(1) F H(1) 1 2 3. J(1) L L(1). L(1) M* P Q b(1). ECN: X15-0364-Rev. C, 14-Dec-15. L. DWG: 6031. Note M* = inches to inches (dimension including protrusion), heatsink hole for HVM. C. b e J(1). e(1). Package Picture ASE Xi'an Revison: 14-Dec-15 1 Document Number: 66542. For technical questions, contact: THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT. ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Legal Disclaimer Notice Vishay Disclaimer . ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE. RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.

10 Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay 's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application.