Selection guide - March 2018 Infrared Detectors

1 Selection guide - March 2018 Infrared DetectorsCovering a broad spectral range in the Infrared region InAsSb photovoltaic detectorP11120 -201 InGaAs PIN photodiode (surface mount type)G13176-003P/-010P InGaAs area image sensorG13393-0909 WInfrared DetectorsInfrared detectorsInfrared Detectors are widely used in diverse field including measurement, analysis, industry, communication, agriculture, medicine, physical and chemical science, astronomy and space. Based on long experience involving photonic technology, Hamamatsu provides a wide variety of Infrared Detectors in order to meet a large range of application needs. In addition to the standard devices listed in this catalog, custom devices are also available on request.

2 Please feel free to contact the nearest sales offi ce in your PIN photodiodes 5 Short wavelength enhanced type 5 Standard type 5 Long wavelength type 7 Infrared detector modules with preamp 9 InGaAs PIN photodiode arrays 10 InGaAs image sensors 11 InGaAs linear image sensors for spectrometry 11 High-speed type InGaAs linear image sensors 12 InGaAs area image sensors 13 InAs/InAsSb/InSb photovoltaic Detectors , InSb photoconductive Detectors 14 InAs photovoltaic Detectors 14 InAsSb photovoltaic Detectors 14 InSb photovoltaic Detectors 15 InSb photoconductive Detectors 16 Infrared detector modules with preamp 16 Thermopile Detectors (Si thermal Detectors )

3 17 Single-element type 17 Dual-element type 17 Two-color Detectors 18 Photon drag Detectors 20 Non-cooled type 20 Accessories for Infrared Detectors 21 Temperature controllers C1103 series 22 Valve operator for metal dewar A3515 22 Heatsinks for TE-cooled Detectors (TO-8, TO-3 package) A3179 series 23 Chopper C4696 24 Amplifi ers for Infrared Detectors C4159 series, C5158-02 25 Description of terms 27 Infrared detectorsFor detailed information on the products listed in this catalog, see their datasheets that are available from our website PIN photodiodesInGaAs linear image sensors5, 6, 1057781518, , 12 InGaAs area image response range ( m)Product nameFeaturesPageProduct nameSpectral response range ( m)

4 FeaturesPageInSb photoconductive detectorsInSb photovoltaic detectorsInAs photovoltaic detectorsInAsSb photovoltaic detectorsThermopile detectorsTwo-color detectorsSi + InAsSbSi + InGaAsInGaAs + InGaAsPhoton drag For optical measurement around m TE-cooled type available For NIR spectroscopy TE-cooled type available Short wavelength enhanced type Can detect light from m Detects wavelengths up to around m, with high sensitivity over long periods by thermoelectric cooling High-speed and high sensitivity in so-called atmospheric window (3 to 5 m) Covers a spectral response range close to PbS but offers higher response speed Wide spectral response range from UV to IR Uses two Detectors with different spectral response ranges, mounted one over the other along the same optical axis High-speed detector with high sensitivity in 10 m band (for CO2 laser detection)

5 Room temperature operation with high-speed response Sensors that generate thermoelectromotive force in proportion to the energy level of incident Infrared light Infrared Detectors in the 5 m, 8 m, or 10 m spectral band High-speed response High Timing generator incorporated Gain switching Available with various photosensitive areas, spectral response ranges, numbers of pixels, TE-coolers, and packages TE-cooled type available Timing generator incorporated TE-cooled type Low-density pixel (64x64) to high-density pixel (VGA) formats available Standard type High-speed response, high sensitivity, low dark current Available with various photosensitive areas, arrays, and packages For optical measurement in the band of water content absorption ( m) TE-cooled type available Hamamatsu Infrared detectors3 Wavelength ( m)D* (cm Hz1/2/W)02 9 InAsSb (-30 C)10610710810910101011101210131014123045 6789101112131415 InSb (-60 C)InAsSb for 10 m band (-30 C)ThermopileShort wavelength enhanced type InGaAs (25 C)Si (25 C)Long wavelength type InGaAs (-196 C)InAs (-196 C)InSb (-196 C)Long wavelength type InGaAs (25 C)InAsSb (-196 C)InAsSb for 8 m band (-30 C)Photovoltaic detectorsPhotoconductive detectorsSi thermal detectorsInAsSb (25 C)

6 KIRDB0259EJ Spectral response of Hamamatsu Infrared Detectors (typical example)When using Infrared Detectors , the following points should be taken into consideration for making a device responseAs can be seen from the fi gure above, Hamamatsu provides a variety of Infrared Detectors with different spectral response characteristics. It should be noted that cooling a detector element may affect its spectral response. For InGaAs, InAs, InSb and InAsSb Detectors , the spectral response shifts to the shorter wavelength speedVarious Detectors are available with different response area and number of elementsHamamatsu photosensors are available in a wide range of photosensitive area sizes. Also available are multi-element detector arrays optimized for high-speed multichannel easy-to-use photosensors designed for room temperature, Hamamatsu provides various types of sensors that are cooled with thermoelectric coolers, cryogenic dewars (for liquid nitrogen cooling).

7 Object temperatureWhen selecting a detector in accordance with the temperature of an object, it is necessary to consider the distribution of the energy (the wavelength dependency of the energy) radiated from the object. When the temperature of the object is changed, the distribution of the radiating energy is given by the law of black body radiation (Planck's law), as shown in the fi gure at the right-hand side. The following relationship is established by the peak sensitivity wavelength p ( m) and the absolute temperature T (K). p T= radiance N. (W cm-2 sr-1 m-1) (K)=6000200273400600100010-710-610-510-4 10-310-210-110010110210310410100 Wavelength ( m)KIRDB0014EB Law of black body radiation (Planck's law)4 InGaAs PIN photodiodes(Typ.)

8 Ta=25 C)Type area(mm)Spectral responserange ( m)Peak sensitivitywavelength p( m)Cutoff frequencyfcVR=1 V(MHz)PackagePhotoOption(sold separately)G10899-003 KNon-cooled to ( )G10899-005K 145G10899-02K 210TO-5G10899-03K 35 Various photosensitive area sizes are available.(Typ. Ta=25 C, unless otherwise noted)Type area(mm)Spectral responserange ( m)Peak sensitivitywavelength p( m)Cutoff frequencyfc(MHz)PackagePhotoOption(sold separately)G12180-003 ANon-cooled to (VR=5 V)TO-18C4159-03 ( )G12180-005A (VR=5 V)G12180-010A 160(VR=5 V)G12180-020A 213(VR=1 V)TO-5G12180-030A 37(VR=1 V)G12180-050A 53(VR=1 V)TO-8G8370-81* 135(VR=1 V)TO-18G8370-82* 24(VR=1 V)TO-5G8370-83* 32(VR=1 V)G8370-85* (VR=1 V)TO-8G12180-110 AOne-stageTE-cooled(Tchip=-10 C) to (VR=1 V)TO-8C4159-03 ( )A3179 ( )C1103-04 ( )G12180-120A 213(VR=1 V)G12180-130A 37(VR=1 V)G12180-150A 53(VR=1 V)G12180-210 ATwo-stageTE-cooled(Tchip=-20 C) to (VR=1 V)C4159-03 ( )A3179-01 ( )C1103-04 ( )G12180-220A 213(VR=1 V)G12180-230A 37(VR=1 V)

9 G12180-250A 53(VR=1 V)G6854-01 Non-cooled to (VR=5 V)TO-18with CD lens* Low PDL (polarization dependent loss) typeShort wavelength enhanced typeStandard typeMetal package5 InGaAs PIN photodiodes(Typ. Ta=25 C)Type area(mm)Spectral responserange ( m)Peak sensitivitywavelength p( m)Cutoff frequencyfcVR=5 V(MHz)PackagePhotoG8941-01 to (non-sealed)G8941-02 160G13176-003P 160(Typ. Ta=25 C)Type area(mm)Spectral responserange ( m)Peak sensitivitywavelength p( m)PhotosensitivityS = p(A/W)Cutoff frequencyfcVR=0 V(MHz)PhotoG8370-10 to packageSurface mount typeWavelength ( m)(Typ. Ta=25 C)Photosensitivity (A/W) seriesSi photodiode S1337-BRSi photodiodeS1337-BQG6854-01G8941 seriesG8370-81/-82/-83/-85 Wavelength ( m)Photosensitivity (A/W)0(Typ.)

10 CTchip=-10 CTchip=-20 CG12180 series: G12180 seriesG8370-10 Wavelength ( m)Photosensitivity (A/W)(Typ. Ta=25 C) seriesG13176 seriesKIRDB0646 EAKIRDB0644 EAKIRDB0444EE[ G 1 0 8 9 9 s e r i e s , e t c . ][ G 1 2 1 8 0 s e r i e s , G 8 3 7 0 - 1 0 ][ G 111 9 3 / G 1 3 1 7 6 s e r i e s ] Spectral response6 These are suitable for optical measurement around m.(Typ. Ta=25 C, unless otherwise noted)Type area(mm)Spectral responserange ( m)Peak sensitivitywavelength p( m)Cutoff frequencyfcVR=0 V(MHz)PackagePhotoOption(sold separately)G12181-003 KNon-cooled to ( )G12181-005K 110G12181-020K 31. 5G12181-103 KOne-stageTE-cooled(Tchip=-10 C) to ( )A3179 ( )C1103-04 ( )G12181-105K 116G12181-120K 31.