SiC530 - Vishay

1 SiC530 . Vishay Siliconix 30 A VRPower Integrated Power Stage DESCRIPTION FEATURES. The SiC530 is an integrated power stage solution optimized Thermally enhanced PowerPAK MLP4535-22L. for synchronous buck applications to offer high current, high package efficiency, and high power density performance. Packaged Vishay 's Gen IV MOSFET technology and a in Vishay 's proprietary mm x mm MLP package, low-side MOSFET with integrated Schottky SiC530 enables voltage regulator designs to deliver up to diode 30 A continuous current per phase.

2 Delivers up to 30 A continuous current, 40 A at 10 ms peak The internal power MOSFETs utilize Vishay 's current state-of-the-art Gen IV TrenchFET technology that delivers High efficiency performance industry benchmark performance to significantly reduce switching and conduction losses. High frequency operation up to 2 MHz The SiC530 incorporates an advanced MOSFET gate driver Power ON reset IC that features high current driving capability, adaptive 5 V PWM logic with tri-state and hold-off dead-time control, an integrated bootstrap Schottky diode, Supports PS4 mode light load requirement for IMVP8 with and zero current detect to improve light load efficiency.

3 The low shutdown supply current (5 V, 5 A). driver is also compatible with a wide range of PWM. controllers, supports tri-state PWM, and 5 V PWM logic. Under voltage lockout for VCIN. A user selectable diode emulation mode (ZCD_EN#) Material categorization: for definitions of compliance function is included to improve the light load performance. please see The device also supports the PS4 mode to reduce power consumption when system operates in standby state. APPLICATIONS. Multi-phase VRDs for CPU, GPU, and memory INTEL IMVP-8 IA / GT core power Up to 18 V rail input DC/DC VR modules TYPICAL APPLICATION DIAGRAM.

4 5V VIN. VDRV. VIN. BOOT. VCIN PHASE. ZCD_EN#. VSWH. Gate VOUT. PWM. controller PWM driver PGND. CGND. GL. Fig. 1 - SiC530 Typical Application Diagram S15-2523-Rev. B, 02-Nov-15 1 Document Number: 62940. For technical questions, contact: THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT. ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT SiC530 . Vishay Siliconix PINOUT CONFIGURATION. PGND. PGND. PGND. VIN. VIN. VIN. 11 10 9 8 7 6. 25. VSWH 12 5 PHASE. VIN. 26. VSWH 13 PGND 4 BOOT.

5 VSWH 14 3 23. VSWH 15 CGND 2 VCIN. VSWH 16 24 1 ZCD_EN#. GL. 17 18 19 20 21 22. PGND. PGND. GL. PGND. VDRV. PWM. Fig. 2 - SiC530 Pin Configuration PIN DESCRIPTION. PIN NUMBER NAME FUNCTION. 1 ZCD_EN# ZCD, PS4 control. Active low 2 VCIN Supply voltage for internal logic circuitry 23 CGND Analog ground for the driver IC. 3 No connection 4 BOOT High-side driver bootstrap voltage 5 PHASE Return path of high-side gate driver 6 to 8, 25 VIN Power stage input voltage. Drain of high-side MOSFET. 9 to 11, 17, 18, 20, 26 PGND Power ground 12 to 16 VSWH Switch node of the power stage 19, 24 GL Low-side gate signal 21 VDRV Supply voltage for internal gate driver 22 PWM PWM control input ORDERING INFORMATION.

6 PART NUMBER PACKAGE MARKING CODE. SiC530CD-T1-GE3 PowerPAK MLP4535-22L SiC530 5 V PWM optimized SiC530DB Reference board S15-2523-Rev. B, 02-Nov-15 2 Document Number: 62940. For technical questions, contact: THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT. ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT SiC530 . Vishay Siliconix PART MARKING INFORMATION. = Pin 1 Indicator P/N = Part Number Code P/N = Siliconix Logo = ESD Symbol LL. F = Assembly Factory Code Y = Year Code FYWW.

7 WW = Week Code LL = Lot Code Fig. 3 - SiC530 Part Marking ABSOLUTE MAXIMUM RATINGS. ELECTRICAL PARAMETER CONDITIONS LIMIT UNIT. Input Voltage VIN to +25. Control Logic Supply Voltage VCIN to +7. Drive Supply Voltage VDRV to +7. Switch Node (DC voltage) to +25. VSWH. Switch Node (AC voltage) (1) -8 to +32. BOOT Voltage (DC voltage) 32 V. VBOOT. BOOT Voltage (AC voltage) (2) 40. BOOT to PHASE (DC voltage) to +7. VBOOT- PHASE. BOOT to PHASE (AC voltage) (3) to +8. All Logic Inputs and Outputs to VCIN + (PWM and ZCD_EN#).

8 Max. Operating Junction Temperature TJ 150. Ambient Temperature TA -40 to +125 C. Storage Temperature Tstg -65 to +150. Human body model, JESD22-A114 2000. Electrostatic Discharge Protection V. Charged device model, JESD22-C101 1000. Notes Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied.

9 Exposure to absolute maximum rating conditions for extended periods may affect device reliability. (1) The specification values indicated AC is V. SWH to PGND, -8 V (< 20 ns, 10 J), min. and 32 V (< 50 ns), max. (2) The specification value indicates AC voltage is V. BOOT to PGND, 40 V (< 50 ns) max. (3) The specification value indicates AC voltage is V. BOOT to VPHASE, 8 V (< 50 ns) max. RECOMMENDED OPERATING RANGE. ELECTRICAL PARAMETER MINIMUM TYPICAL MAXIMUM UNIT. Input Voltage (VIN) - 20. Drive Supply Voltage (VDRV) 5 V.

10 Control Logic Supply Voltage (VCIN) 5 BOOT to PHASE (VBOOT-PHASE, DC voltage) 4 Thermal Resistance from Junction to PCB - 5 - C/W. Thermal Resistance from Junction to Case - - S15-2523-Rev. B, 02-Nov-15 3 Document Number: 62940. For technical questions, contact: THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT. ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT SiC530 . Vishay Siliconix ELECTRICAL SPECIFICATIONS . (ZCD_EN# = 5 V, VIN = 12 V, VDRV and VCIN = 5 V, TA = 25 C).