Silicon PIN Photodiode - Vishay

1 Semiconductors Rev. , 04-Aug-141 Document Number: 83471 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT PIN PhotodiodeDESCRIPTIONTEFD4300 is a Silicon PIN Photodiode with high radiant sensitivity in clear, T-1 plastic package. It is sensitive to visible and near infrared Package type: leaded Package form: T-1 Dimensions (in mm): 3 High radiant sensitivity Suitable for visible and near infrared radiation Fast response times Angle of half sensitivity: = 20 Package matched with IR emitter series VSLB3940, TSUS4300, and TSAL4400 Material categorization: for definitions of compliance please see APPLICATIONS High speed photo detector for data transmission Optical switches Counters and sorters Interrupters Encoders Position sensorsNote Test condition see table Basic Characteristics Note MOQ.

2 Minimum order quantityPRODUCT SUMMARYCOMPONENTIra ( A) (deg) (nm)TEFD430017 20350 to 1120 ORDERING INFORMATIONORDERING CODEPACKAGINGREMARKSPACKAGE FORMTEFD4300 BulkMOQ: 5000 pcs, 5000 pcs/bulkT-1 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified)PARAMETERTEST CONDITIONSYMBOLVALUEUNITR everse voltageVR60 VPower dissipationTamb 25 CPV215mWJunction temperatureTj100 COperating temperature rangeTamb-40 to +100 CStorage temperature rangeTstg-40 to +100 CSoldering temperaturet 3 s, 2 mm from caseTsd260 CThermal resistance junction/ambientConnected with Cu wire, mm2 RthJA450 Semiconductors Rev. , 04-Aug-142 Document Number: 83471 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

3 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)Fig. 1 - Reverse Dark Current vs. Ambient TemperatureFig. 2 - Relative Reverse Light Current vs. Ambient TemperatureBASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)PARAMETERTEST voltageIF = 50 mA VF 1 VBreakdown voltage IR = 100 A, E = 0 V(BR) 60 VReverse dark current VR = 10 V, E = 0 Iro capacitanceVR = 0 V, f = 1 MHz, E = 0 CD = 5 V, f = 1 MHz, E = 0 CD circuit voltage Ee = 1 mW/cm2, = 950 nm VOC 350mVTemperature coefficient of VOEe = 1 mW/cm2, = 950 nm circuit current Ee = 1 mW/cm2, = 950 nm Ik 15 ATemperature coefficient of IkEe = 1 mW/cm2, = 950 nm TKIk light current Ee = 1 mW/cm2, = 950 nm.

4 VR = 5 V Ira 91727 AAngle of half sensitivity 20 degWavelength of peak sensitivity p 950nmRange of spectral bandwidth time VR = 10 V, RL = 1 k , = 820 nm tr 100nsFall time VR = 10 V, RL = 1 k , = 820 nm tf 100ns10-1210-6020406080100 Tamb - Ambient Temperature ( C)Ir0 - Reverse Dark Current (A)10-710-810-910-10VR = 10 , rel - Relative Reverse Light CurrentTamb - Ambient Temperature ( C)94 8416VR = 5 V = 950 Semiconductors Rev. , 04-Aug-143 Document Number: 83471 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 3 - Reverse Light Current vs.

5 IrradianceFig. 4 - Diode Capacitance vs. Reverse VoltageFig. 5 - Relative Spectral Sensitivity vs. WavelengthFig. 6 - Relative Radiant Intensity vs. Angular DisplacementFig. 7 - Dark Current vs. Reverse 000Ee - Irradiance ( W/cm2)Ira - Reverse Light Current ( A) = 100 s, VR = 5 V, = 950 - Reverse Voltage (V)Cp - Capacitance (pF) = 1 MHz, E = 500 600 7001100 - Wavelength (nm)S( )rel - Relative Spectral 900 90- 60- 30090 - Angular Displacement ( )Srel - Relative - Reverse Voltage (V)Ir0 - Reverse Dark Current (A)10-710-810-910-10100 C10-1175 C50 C25 C0 Semiconductors Rev. , 04-Aug-144 Document Number: 83471 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

6 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT DIMENSIONS in millimetersDrawing-No.: : 2; 3 < drawingsaccording to DINspecificationsACAREA NOT PLANE( )SENSITIVE + + Disclaimer Revision: 08-Feb-171 Document Number: 91000 Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.

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