Small Signal Fast Switching Diode

1 Semiconductors Rev. , 23-Feb-181 Document Number: 85748 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Signal Fast Switching DiodeDESIGN SUPPORT TOOLSMECHANICAL DATACase: SOD-123 Weight: approx. mgPackaging codes / options:18/10K per 13" reel (8 mm tape), 10K/box08/3K per 7" reel (8 mm tape), 15K/boxFEATURES Silicon epitaxial planar Diode Fast Switching diodes AEC-Q101 qualified available Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified Material categorization.

2 For definitions of compliance please see (1)Valid provided that electrodes are kept at ambient logo to get startedAvailableModelsPARTS TABLEPARTORDERING CODETYPE MARKINGCIRCUIT CONFIGURATIONREMARKS1N4148W1N4148W-E3-08 or 1N4148W-E3-18A2 SingleTape and reel1N4148W-HE3-08 or 1N4148W-HE3-18 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified)PARAMETERTEST CONDITIONSYMBOLVALUEUNITR everse voltageVR75 VRepetitive peak reverse voltageVRRM100 VAverage rectified current half wave rectification with resistive load (1)f 50 HzIF(AV)150mASurge forward currenttp < 1 sIFSM500mAtp = 1 sIFSM2 APower dissipation (1)Ptot350mWTHERMAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)PARAMETERTEST CONDITIONSYMBOLVALUEUNITT hermal resistance junction to ambient air (1)

3 RthJA357K/WJunction temperatureTj150 CStorage temperature rangeTstg-65 to +150 COperating temperature rangeTop-55 to +150 Semiconductors Rev. , 23-Feb-182 Document Number: 85748 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)Fig. 1 - Forward CharacteristicsFig. 2 - Dynamic Forward Resistance vs.

4 Forward CurrentFig. 3 - Admissible Power Dissipation vs. Ambient TemperatureFig. 4 - Relative Capacitance vs. Reverse VoltageELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)PARAMETERTEST voltageIF = 10 mAVF1 VIF = 100 currentVR = 20 VIR25nAVR = 75 VIR5 AVR = 100 VIR100 AVR = 20 V, TJ = 150 CIR50 ADiode capacitanceVF = VR = 0 VCD4pFVoltage rise when Switching ONTested with 50 mA pulses,tp = s, rise time < 30 ns,fp = (5 to 100) recovery timeIF = 10 mA, iR = 1 mA, VR = 6 V,RL = 100 trr4ns17437012VF (V)IF (mA)10-110-2110102103Tj = 100 CTj = 25 C17438f = 1 kHzTj = 25 CIF (mA)Rf ( )

5 1010210310410-210-1110210252525250501001 50200250300350400450500050100150 Tamb - Ambient Temperature ( C) Ptot - Power Dissipation (mW)2080917440VR (V) = 1 MHzTj = 25 C2086410CD (VR)CD (0 V) Semiconductors Rev. , 23-Feb-183 Document Number: 85748 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 5 - Leakage Current vs. Junction TemperatureFig. 6 - Admissible Repetitive Peak Forward Current vs.

6 Pulse Duration17441Tj ( C)IR (nA)1010210310410020025252525VR = 20 V1017442tP (s)IFRM (A)10013510-510-410-31010-110-2252 = tP/TT = 1/fPttPn = Semiconductors Rev. , 23-Feb-184 Document Number: 85748 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT DIMENSIONS in millimeters (inches): ( ) ( ) ( ) ( ) ( ) ( ) ( )Mounting Pad ( ) ( ) ( ) ( )Cathode ( ) ( ) ( )1 ( ) ( ) ( ) ( )0 to 8 ( ) ( ) ( ) 4 - Date: 24.

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