Small Signal Zener Diodes, Dual - Vishay Intertechnology

1 Semiconductors Rev. 08-Nov-161 Document Number: 85759 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Signal Zener Diodes, DualFEATURES Dual silicon planar Zener diodes, common anode The Zener voltages are graded according to the international E24 standard. Standard Zener voltage tolerance is 5 %, indicated by the C in the ordering code. Replace C with B for 2 % tolerance. The parameters are valid for both diodes in one case. VZ and Rzj of the two diodes in one case is 5 % AEC-Q101 qualified available ESD capability according to AEC-Q101: Human body model > 8 kV Machine model > 800 V Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified Material categorization: for definitions of compliance please see CHARACTERISTICSPARAMETERVALUEUNITVZ range to 51 VTest current IZT 5mAVZ specificationPulse currentInt.

2 ConstructionDual common anode20456231 AvailableORDERING INFORMATIONDEVICE NAMEORDERING CODETAPED UNITS PER REELMINIMUM ORDER QUANTITYAZ23-seriesAZ23C2V7-E3-08 to AZ23C51-E3-083000 (8 mm tape on 7" reel)15 000AZ23B2V7-E3-08 to AZ23B51-E3-08AZ23C2V7-HE3-08 to AZ23C51-HE3-08AZ23B2V7-HE3-08 to AZ23B51-HE3-08AZ23C2V7-E3-18 to AZ23C51-E3-18 10 000 (8 mm tape on 13" reel)10 000AZ23B2V7-E3-18 to AZ23B51-E3-18AZ23C2V7-HE3-18 to AZ23C51-HE3-18AZ23B2V7-HE3-18 to AZ23B51-HE3-18 PACKAGEPACKAGE NAMEWEIGHTMOLDING COMPOUND FLAMMABILITY RATINGMOISTURE SENSITIVITY LEVELSOLDERING mgUL 94 V-0 MSL level 1(according J-STD-020)260 C/10 s at terminalsABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified)PARAMETERTEST CONDITIONSYMBOLVALUEUNITP ower dissipationDevice on fiberglass substrate,see layout on page 6 Ptot300mWThermal resistance, junction to ambient airDevice on fiberglass substrate,see layout on page 6 RthJA420K/WJunction temperatureTj150 CStorage temperature rangeTstg-65 to +150 COperating temperature rangeTop-55 to +150 Semiconductors Rev.

3 08-Nov-162 Document Number: 85759 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT (1)Tested with pulses tp = 5 ms ELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)PART NUMBERMARKING CODEZENER VOLTAGE RANGE (1)TEST CURRENTREVERSE VOLTAGEDYNAMIC RESISTANCETEMPERATURE COEFFICIENT OF Zener VOLTAGEVZ at IZT1 IZT1 IZT2VR at IRZZ at IZT1 ZZK at IZT2 VZ at IZTVmAVnA 10-4/ (< 83)< (< 95)< (< 95)< (< 95)< (< 95)< (< 95)< (< 78)< > (< 60)< > 110010 (< 40)< > (< 10)< > (< 8)< > 51004 (< 7)< > (< 7)< > (< 10)< > (< 15)< > (< 20)< > 91007 (< 20)< > 101009 (< 25)< > 1110011 (< 30)

4 < > 1210013 (< 40)< > 1410018 (< 50)< > 1510020 (< 50)< > 1710025 (< 55)< > 1810028 (< 80)< > 2010030 (< 80)< 250810AZ23C30D2628303251> (< 80)< 250810AZ23C33D2731333551> 2510040 (< 80)< 250810AZ23C36D2834363851> 2710040 (< 90)< 250810AZ23C39D2937394151> 2910050 (< 90)< 3001012AZ23C43D3040434651> 3210060 (< 100)< 7001012AZ23C47D3144475051> 3510070 (< 100)< 7501012AZ23C51D3248515451> 3810070 (< 100)< Semiconductors Rev. 08-Nov-163 Document Number: 85759 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT (1)Tested with pulses tp = 5 ms ELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)PART NUMBERMARKING CODEZENER VOLTAGE RANGE (1)TEST CURRENTREVERSE VOLTAGEDYNAMIC RESISTANCETEMPERATURE COEFFICIENT OF Zener VOLTAGEVZ at IZT1 IZT1 IZT2VR at IRZZ at IZT1 ZZK at IZT2 VZ at IZTVmAVnA 10-4/ (< 83)< (< 95)< (< 95)< (< 95)< (< 95)< (< 95)< (< 78)< > (< 60)< > 110010 (< 40)< > (< 10)< > (< 8)< > 51004 (< 7)< > (< 7)< > (< 10)< > (< 15)< > (< 20)< > 91007 (< 20)< > 101009 (< 25)< > 1110011 (< 30)

5 < > 1210013 (< 40)< > 1410018 (< 50)< > 1510020 (< 50)< > 1710025 (< 55)< > 1810028 (< 80)< > 2010030 (< 80)< > (< 80)< > 2510040 (< 80)< > 2710040 (< 90)< > 2910050 (< 90)< > 3210060 (< 100)< > 3510070 (< 100)< 7501012AZ23B51D3250515251> 3810070 (< 100)< Semiconductors Rev. 08-Nov-164 Document Number: 85759 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)Fig. 1 - Forward CharacteristicsFig. 2 - Admissible Power Dissipation vs. Ambient TemperatureFig.

6 3 - Dynamic Resistance vs. Zener CurrentFig. 4 - Thermal Differential Resistance vs. Zener VoltageFig. 5 - Dynamic Resistance vs. Zener VoltageFig. 6 - Temperature Dependence of Zener Voltage = 100 CTJ = 25 C18115mW4001000300200 PtotTamb0100200 C50018120103754327543210 = 25 C47 + 5143393610218121103543254321021 Rzth543210 12345234510100 VVZ at IZ = 5 mAnegativepositive VZTjRzth = RthA x VZ x 1812210075432754321 Rzj10Tj = 25 CIZ = 5 mA12345234510100 VVZ18123 2520151050- 5mV/ C VZTj12345234510100 VVZ5 mA1 mA20 mAIZ = Semiconductors Rev. 08-Nov-165 Document Number: 85759 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

7 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 7 - Change of Zener Voltage vs. Junction TemperatureFig. 8 - Temperature Dependence of Zener Voltage VoltageFig. 9 - Change of Zener Voltage vs. Junction TemperatureFig. 10 - Change of Zener Voltage from Turn-on up to the Point of Thermal Equilibrium vs. Zener VoltageFig. 11 - Change of Zener Voltage from Turn-on up to the Point of Thermal Equilibrium vs. Zener VoltageFig. 12 - Breakdown Characteristics18124VZ at IZ = 5 - 1- 120 140 C 18125 100806040200mV/ C VZTj020408060100 VVZIZ = 5 mA18126 97531- 1 VVZ86420010060Tj204012080140 CIZ = 2 mA51433618127 - VVZ at IZ = 5 mAVZ = Rzth x IZ 18128 543210 VVZ020406080100 VVZIZ = 5 mAIZ = 2 mAVZ = Rzth x IZ 18111 Test current IZ 5 mA123456789010 = 25 Semiconductors Rev.

8 08-Nov-166 Document Number: 85759 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 13 - Breakdown CharacteristicsFig. 14 - Breakdown CharacteristicsLAYOUT FOR RthJA TESTT hickness: fiberglass " ( mm) Copper leads " ( mm)18112102030040 VVZmA3020100lZ33 Test current IZ 5 mATj = 25 C1012151822273618113mA1086420lZ1020 30 40 50 60 70 80 900100 VVZ4339 Test current IZ 5 mATj = 25 C47511745115 ( )12 ( ) ( )5 ( ) ( )3 ( )1 ( )1 ( )2 ( )2 ( ) ( ) ( ) Semiconductors Rev. 08-Nov-167 Document Number: 85759 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

9 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT DIMENSIONS in millimeters (inches): SOT-23 Foot print recommendation:Rev. 8 - Date: no.: ( )1 ( ) ( )1 ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )2 ( ) ( ) ( )0 to 8 ( ) ( ) ( ) ref. ( ref.)Legal Disclaimer Revision: 08-Feb-171 Document Number: 91000 Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology , Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.

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