Small Signal Zener Diodes - Vishay Intertechnology

1 TZX- series Vishay Semiconductors Small Signal Zener Diodes FEATURES. Very sharp reverse characteristic Low reverse current level Very high stability Low noise AEC-Q101 qualified Material categorization: . For definitions of compliance please see APPLICATIONS. Voltage stabilization PRIMARY CHARACTERISTICS. PARAMETER VALUE UNIT. VZ range nom. to 36 V. Test current IZT 2; 5 mA. VZ specification Pulse current Int. construction Single ORDERING INFORMATION. DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY. 10 000 per ammopack TZX- series TZX- series -TAP 30 000/box (52 mm tape). 10 000 per 14" reel TZX- series TZX- series -TR 30 000/box (52 mm tape). PACKAGE. MOLDING COMPOUND MOISTURE SENSITIVITY. PACKAGE NAME WEIGHT SOLDERING CONDITIONS.

2 FLAMMABILITY RATING LEVEL. MSL level 1. DO-35 125 mg UL 94 V-0 260 C/10 s at terminals (according J-STD-020). ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified). PARAMETER TEST CONDITION SYMBOL VALUE UNIT. Power dissipation l = 4 mm, TL = 25 C Ptot 500 mW. Zener current IZ Ptot/VZ mA. Thermal resistance junction to ambient air l = 4 mm, TL =constant RthJA 300 K/W. Junction temperature Tj 175 C. Storage temperature range Tstg - 65 to + 175 C. Forward voltage (max.) IF = 200 mA VF V. Rev. , 14-Apr-14 1 Document Number: 85614. For technical questions within your region: THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT. ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT TZX- series Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified).

3 Zener VOLTAGE DYNAMIC. TEST CURRENT REVERSE LEAKAGE CURRENT. RANGE RESISTANCE. PART NUMBER VZ at IZT1 IZT1 IR at VR IR at VR (1) ZZ at IZT1. V mA A V A V . MIN. MAX. MAX. MAX. MAX. TZX2V4A 5 5 50 1 100. TZX2V4B 5 5 50 1 100. TZX2V7A 5 5 10 1 100. TZX2V7B 5 5 10 1 100. TZX2V7C 5 5 10 1 100. TZX3V0A 3 5 5 6 1 100. TZX3V0B 5 5 6 1 100. TZX3V0C 3 5 5 6 1 100. TZX3V3A 5 5 1 2 1 100. TZX3V3B 5 5 1 2 1 100. TZX3V3C 5 5 1 2 1 100. TZX3V6A 5 5 1 2 1 100. TZX3V6B 5 5 1 2 1 100. TZX3V6C 5 5 1 2 1 100. TZX3V9A 5 5 1 2 1 100. TZX3V9B 4 5 5 1 2 1 100. TZX3V9C 5 5 1 2 1 100. TZX4V3A 4 5 5 1 1 100. TZX4V3B 5 5 1 1 100. TZX4V3C 5 5 1 1 100. TZX4V3D 5 5 1 1 100. TZX4V7A 5 5 2 6 2 100. TZX4V7B 5 5 2 5 2 100. TZX4V7C 5 5 2 4 2 100. TZX4V7D 5 5 2 3 2 100.

4 TZX5V1A 5 5 5 2 2 2 100. TZX5V1B 5 5 2 2 2 100. TZX5V1C 5 5 5 2 2 2 100. TZX5V1D 5 5 2 2 2 100. TZX5V6A 5 5 2 1 2 40. TZX5V6B 5 5 2 1 2 40. TZX5V6C 5 5 2 1 2 40. TZX5V6D 5 5 2 1 2 40. TZX5V6E 5 5 2 1 2 40. TZX6V2A 6 5 1 3 3 4 15. TZX6V2B 5 1 3 3 4 15. TZX6V2C 6 5 1 3 3 4 15. TZX6V2D 5 1 3 3 4 15. TZX6V2E 5 1 3 3 4 15. TZX6V8A 5 1 2 4 15. TZX6V8B 5 1 2 4 15. TZX6V8C 7 5 1 2 4 15. TZX6V8D 5 1 2 4 15. Rev. , 14-Apr-14 2 Document Number: 85614. For technical questions within your region: THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT. ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT TZX- series Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified).

5 Zener VOLTAGE DYNAMIC. TEST CURRENT REVERSE LEAKAGE CURRENT. RANGE RESISTANCE. PART NUMBER VZ at IZT1 IZT1 IR at VR IR at VR (1) ZZ at IZT1. V mA A V A V . MIN. MAX. MAX. MAX. MAX. TZX7V5A 7 5 1 5 30 15. TZX7V5B 5 1 5 30 15. TZX7V5C 5 1 5 30 15. TZX7V5D 5 1 5 30 15. TZX7V5X 5 1 5 30 15. TZX8V2A 5 1 20. TZX8V2B 5 1 20. TZX8V2C 5 1 20. TZX8V2D 5 1 20. TZX9V1A 5 1 20. TZX9V1B 5 1 20. TZX9V1C 5 1 20. TZX9V1D 5 1 20. TZX9V1E 5 1 20. TZX10A 5 1 25. TZX10B 5 1 25. TZX10C 5 1 25. TZX10D 5 1 25. TZX11A 5 1 25. TZX11B 5 1 25. TZX11C 5 1 25. TZX11D 5 1 25. TZX12A 5 1 35. TZX12B 5 1 11 35. TZX12C 5 1 35. TZX12D 5 1 35. TZX12X 5 1 35. TZX13A 5 1 10 35. TZX13B 5 1 10 12 35. TZX13C 5 1 10 35. TZX14A 5 1 11 35. TZX14B 14 5 1 11 35. TZX14C 5 1 11 35.

6 TZX15A 5 1 40. TZX15B 5 1 40. TZX15C 5 1 40. TZX15X 5 1 40. TZX16A 5 1 12 45. TZX16B 5 1 12 45. TZX16C 5 1 12 45. TZX18A 5 1 13 55. TZX18B 5 1 13 55. TZX18C 19 5 1 13 55. TZX20A 2 1 15 60. TZX20B 2 1 15 60. TZX20C 2 1 15 60. TZX22A 2 1 17 65. Rev. , 14-Apr-14 3 Document Number: 85614. For technical questions within your region: THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT. ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT TZX- series Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified). Zener VOLTAGE DYNAMIC. TEST CURRENT REVERSE LEAKAGE CURRENT. RANGE RESISTANCE. PART NUMBER VZ at IZT1 IZT1 IR at VR IR at VR (1) ZZ at IZT1. V mA A V A V.

7 MIN. MAX. MAX. MAX. MAX. TZX22B 2 1 17 65. TZX22C 2 1 17 65. TZX24A 24 2 1 19 70. TZX24B 2 1 19 70. TZX24C 2 1 19 70. TZX24X 2 1 19 70. TZX27A 2 1 21 80. TZX27B 2 1 21 80. TZX27C 2 1 21 80. TZX27X 2 1 21 80. TZX30A 2 1 23 100. TZX30B 2 1 23 100. TZX30C 2 1 23 100. TZX30X 2 1 23 100. TZX33A 2 1 25 120. TZX33B 2 1 25 120. TZX33C 2 1 25 120. TZX36A 2 1 27 140. TZX36B 2 1 27 140. TZX36C 38 2 1 27 140. TZX36X 2 1 27 140. Notes Additional measurement of voltage group TZM9V1 to TZX36, IR at 95 % VZmin. 40 nA at Tj = 25 C. (1) Additional measurement BASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified). RthJA - Therm. Resist. Junction Ambient (K/W). 500 600. Ptot - Total Power Dissipation (mW). 500. 400. 400. 300. l l 300.

8 200 200. 100 100. TL = constant 0 0. 0 5 10 15 20 0 40 80 120 160 200. I - Lead Length (mm) 95 9611. 95 9602 Tamb - Ambient Temperature ( C). Fig. 1 - Thermal Resistance vs. Lead Length Fig. 2 - Total Power Dissipation vs. Ambient Temperature Rev. , 14-Apr-14 4 Document Number: 85614. For technical questions within your region: THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT. ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT TZX- series Vishay Semiconductors 1000 200. CD - Diode Capacitance (pF). VZ - Voltage Change (mV). 150. 100 VR = 2 V. Tj = 25 C. 100. IZ = 5 mA. 10. 50. 1 0. 0 5 10 15 20 25 0 5 10 15 20 25. 95 9598 VZ - Z-Voltage (V) 95 9601 VZ - Z-Voltage (V). Fig.

9 3 - Typical Change of Working Voltage under Operating Fig. 6 - Diode Capacitance vs. Z-Voltage Conditions at Tamb = 25 C. 100. VZtn = VZt/VZ (25 C). VZtn - Relative Voltage Change IF - Forward Current (mA). 10. TKVZ = 10 x 10-4/K. 8 x 10-4/K. Tj = 25 C. 6 x 10-4/K. 1. 4 x 10-4/K. 2 x 10-4/K. 0 - 2 x 10-4/K. - 4 x 10-4/K - 60 0 60 120 180 240 0 95 9599 Tj - Junction Temperature ( C) 959605 VF - Forward Voltage (V). Fig. 4 - Typical Change of Working Voltage vs. Fig. 7 - Forward Current vs. Forward Voltage Junction Temperature 100. 15. TKVZ - Temperature Coefficient 80. Ptot = 500 mW. IZ - Z-Current (mA). 10. Tamb = 25 C. of VZ (10-4/K). 60. 5. 40. IZ = 5 mA. 0 20. 0. -5 0 4 6 8 12 20. 0 10 20 30 40 50 95 9604 VZ - Z-Voltage (V).

10 95 9600 VZ - Z-Voltage (V). Fig. 8 - Z-Current vs. Z-Voltage Fig. 5 - Temperature Coefficient of Vz vs. Z-Voltage Rev. , 14-Apr-14 5 Document Number: 85614. For technical questions within your region: THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT. ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT TZX- series Vishay Semiconductors 50 1000. rZ - Differential Z-Resistance ( ). Ptot = 500 mW. 40 IZ = 1 mA. Tamb = 25 C. IZ - Z-Current (mA). 100. 30. 5 mA. 20. 10 10 mA. 10. Tj = 25 C. 0 1. 15 20 25 30 35 0 5 10 15 20 25. 95 9607 VZ - Z-Voltage (V) 95 9606 VZ - Z-Voltage (V). Fig. 9 - Z-Current vs. Z-Voltage Fig. 10 - Differential Z-Resistance vs. Z-Voltage Zthp - Thermal Resistance for Pulse Cond.