Small Signal Zener Diodes - Vishay Intertechnology

1 Semiconductors Rev. , 27-Feb-131 Document Number: 83340 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Signal Zener DiodesFEATURES Silicon planar power Zener Diodes The Zener voltages are graded according to theinternational E24 standard AEC-Q101 qualified ESD capability according to AEC-Q101:Human body model > 8 kVMachine model > 800 V Base P/N-G3 - green, commercial grade Material categorization:For definitions of compliance please PRIMARY CHARACTERISTICSPARAMETERVALUEUNITVZ range to 75 VTest current IZT ; 5mAVZ specificationPulse currentInt. constructionSingleORDERING INFORMATIONDEVICE NAMEORDERING CODETAPED UNITS PER REELMINIMUM ORDER QUANTITYBZT52-G-seriesBZT52C2V4-G3-08 to BZT52C75-G3-083000 (8 mm tape on 7" reel)15 000/boxBZT52B2V4-G3-08 to BZT52B75-G3-08 BZT52C2V4-G3-18 to BZT52C75-G3-1810 000 (8 mm tape on 13" reel)10 000/boxBZT52B2V4-G3-18 to BZT52B75-G3-18 PACKAGEPACKAGE NAMEWEIGHTMOLDING COMPOUND FLAMMABILITY RATINGMOISTURE SENSITIVITY LEVELSOLDERING mgUL 94 V-0 MSL level 1(according J-STD-020)260 C/10 s at terminalsABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified)PARAMETERTEST CONDITIONSYMBOLVALUEUNITP ower dissipationDiode on ceramic substrate mm; 5 mm2 pad areasPtot500mWDiode on ceramic substrate mm.

2 Mm2 pad areasPtot410mWZener currentSee Table Electrical Characteristics Thermal resistance junction to ambient airValid provided that electrodes are kept at ambient temperatureRthJA300K/WJunction temperatureTj150 CStorage temperature rangeTstg- 65 to + 150 COperating temperature rangeTop- 55 to + 150 Semiconductors Rev. , 27-Feb-132 Document Number: 83340 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT IZT1 = 5 mA, IZT2 = 1 mA(1)Measured with pulses tp = 5 ms(2)IZT1 = mA(3)IZT2 = mA(4)Valid provided that electrodes are kept at ambient temperatureELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)PART NUMBERMARKING CODEZENER VOLTAGE RANGE (1)TEST CURRENTREVERSE VOLTAGE DYNAMIC RESISTANCETEMP.

3 COEFFICIENT ADMISSABLE Zener CURRENT (4)VZ at IZT1 IZT1 IZT2VR at IRZZ at IZT1 ZZK at IZT2 VZIZ at Tamb = 45 CIZ at Tamb = 25 CVmAVnA 10-4/ 9 to - (< 83)< 500- 9 to - (< 95)< 500- 9 to - (< 95)< 500- 8 to - (< 95)< 500- 8 to - (< 95)< 500- 7 to - (< 95)< 500- 6 to - (< 78)< 500- 5 to + > (< 60)< 480- 3 to + > 110010 (< 40)< 400- 2 to + > (< 10)< 200- 1 to + > (< 8)< 150+ 2 to + > 51004 (< 7)< 50+ 3 to + > (< 7)< 50+ 4 to + > (< 10)< 50+ 5 to + > (< 15)< 70+ 5 to + > (< 20)< 70+ 5 to + > 91007 (< 20)< 90+ 6 to + > 101009 (< 25)< 110+ 7 to + > 1110011 (< 30)< 110+ 7 to + > 1210013 (< 40)< 170+ 8 to + > 1410018 (< 50)< 170+ 8 to + > 1510020 (< 50)< 220+ 8 to + > 1710025 (< 55)< 220+ 8 to + > 1810028 (< 80)< 220+ 8 to + > 2010030 (< 80)< 250+ 8 to + 101012 BZT52C30-GYT28303251> 10035 (< 80)< 250+ 8 to + 10910 BZT52C33-GYU31333551> 2510040 (< 80)< 250+ 8 to + 1089 BZT52C36-GYW34363851> 2710040 (< 90)< 250+ 8 to + 1089 BZT52C39-GYX37394151> 2910050 (< 90)< 300+ 10 to + 1278 BZT52C43-GYY40434651> 3210060 (< 100)< 700+ 10 to + 1267 BZT52C47-GYZ44475051> 3510070 (< 100)< 750+ 10 to + 1256 BZT52C51-GZ148515451> 3810070 (< 100)< 750+ 10 to + < 135 (2)< 1000 (3)typ.

4 + 10 (2) < 150 (2)< 1000 (3)typ. + 10 (2) < 200 (2)< 1000 (3)typ. + 10 (2) < 250 (2)< 1000 (3)typ. + 10 (2) Semiconductors Rev. , 27-Feb-133 Document Number: 83340 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT IZT1 = 5 mA, IZT2 = 1 mA(1)Measured with pulses tp = 5 ms(2)IZT1 = mA(3)IZT2 = mA(4)Valid provided that electrodes are kept at ambient temperatureELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)PART NUMBERMARKING CODEZENER VOLTAGE RANGE (1)TEST CURRENTREVERSE VOLTAGE DYNAMIC RESISTANCETEMP. COEFFICIENT ADMISSABLE Zener CURRENT (4)VZ at IZT1 IZT1 IZT2VR at IRZZ at IZT1 ZZK at IZT2 VZIZ at Tamb = 45 CIZ at Tamb = 25 CVmAVnA 10-4/ 9 to - (< 83)< 500- 9 to - (< 95)< 500- 9 to - (< 95)< 500- 8 to - (< 95)< 500- 8 to - (< 95)< 500- 7 to - (< 95)< 500- 6 to - (< 78)< 500- 5 to + > (< 60)< 480- 3 to + > 110010 (< 40)< 400- 2 to + > (< 10)< 200- 1 to + > (< 8)< 150+ 2 to + > 51004 (< 7)< 50+ 3 to + > (< 7)< 50+ 4 to + > (< 10)< 50+ 5 to + > (< 15)< 70+ 5 to + > (< 20)< 70+ 5 to + > 91007 (< 20)< 90+ 6 to + > 101009 (< 25)< 110+ 7 to + > 1110011 (< 30)< 110+ 7 to + > 1210013 (< 40)< 170+ 8 to + > 1410018 (< 50)< 170+ 8 to + > 1510020 (< 50)< 220+ 8 to + > 1710025 (< 55)< 220+ 8 to + > 1810028 (< 80)< 220+ 8 to + > 2010030 (< 80)

5 < 250+ 8 to + > 10035 (< 80)< 250+ 8 to + > 2510040 (< 80)< 250+ 8 to + > 2710040 (< 90)< 250+ 8 to + > 2910050 (< 90)< 300+ 10 to + > 3210060 (< 100)< 700+ 10 to + > 3510070 (< 100)< 750+ 10 to + 1256 BZT52B51-GU150515251> 3810070 (< 100)< 750+ 10 to + < 135 (2)< 1000 (3)typ. + 10 (2) < 150 (2)< 1000 (3)typ. + 10 (2) < 200 (2)< 1000 (3)typ. + 10 (2) < 250 (2))< 1500 (3)typ. + 10 (2) Semiconductors Rev. , 27-Feb-134 Document Number: 83340 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) Fig. 1 - Forward Characteristics Fig. 2 - Admissible Power Dissipation vs. Ambient Temperature Fig. 3 - Dynamic Resistance vs.

6 Zener Current Fig. 4 - Dynamic Resistance vs. Zener Current Fig. 5 - Dynamic Resistance vs. Zener Current Fig. 6 - Thermal Differential Resistance vs. Zener = 100 CTJ = 25 C188885004003002001000mWPtot2001000 = 25 mA TJ = 25 = 25 C47 + 5143393610218121103543254321021 Rzth543210 12345234510100 VVZ at IZ = 5 mAnegativepositive VZTjRzth = RthA x VZ x Semiconductors Rev. , 27-Feb-135 Document Number: 83340 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig. 7 - Dynamic Resistance vs. Zener Voltage Fig. 8 - Temperature Dependence of Zener Voltage Voltage Fig. 9 - Change of Zener Voltage vs. Junction Temperature Fig. 10 - Temperature Dependence of Zener Voltage Voltage Fig.

7 11 - Change of Zener Voltage vs. Junction Temperature Fig. 12 - Change of Zener Voltage from Turn-on up to the Point of Thermal Equilibrium vs. Zener Voltage1812210075432754321 Rzj10Tj = 25 CIZ = 5 mA12345234510100 VVZ18135 2520151050- 5mV/ C VZTj12345234510100 VVZ at IZ = 5 mAV 27 V, I = 2 mA 5 mA1 mA20 mAIZ =18124VZ at IZ = 5 - 1- 120 140 C 18136 100806040200mV/ C VZTj020408060100 VVZ at IZ = 2 mAIZ = 5 mA181580 20 40 60 80 100 120 140 C 9 8 7 6 5 4 3 2 1 0- 1 VVZ at IZ = 5 mAIZ = 5 mA VZTj514336V18159 0- 10 100 V VZVZ at IZ = 5 mA VZ = rZth x IZIZ = 5 mAVZ >= 56 V; IZ = Semiconductors Rev. , 27-Feb-136 Document Number: 83340 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

8 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig. 13 - Change of Zener Voltage from Turn-on up to the Point of Thermal Equilibrium vs. Zener Voltage Fig. 14 - Breakdown Characteristics Fig. 15 - Breakdown Characteristics Fig. 16 - Breakdown Characteristics18160 543210 VVZ020406080100 VVZ at IZ = 5 mAIZ = 5 mAIZ = mAVZ = rzth x IZ 18111 Test current IZ 5 mA123456789010 = 25 VVZmA3020100lZ33 Test current IZ 5 mATj = 25 Semiconductors Rev. , 27-Feb-137 Document Number: 83340 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT DIMENSIONS in millimeters (inches): ( ) ( ) ( ) ( ) ( ) ( ) ( )Mounting Pad ( ) ( ) ( ) ( )Cathode ( ) ( ) ( )1 ( ) ( ) ( ) ( )0 to 8 ( ) ( ) ( ) 4 - Date: 24.

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