SMBJ SERIES Taiwan Semiconductor

1 SMBJ SERIES . Taiwan Semiconductor 600W, 5V - 170V Surface Mount Transient Voltage Suppressor FEATURES KEY PARAMETERS. Low profile package PARAMETER VALUE UNIT. Ideal for automated placement VWM 2 V. Glass passivated junction Built-in strain relief VBR (uni - directional) 5 - 170 V. Excellent clamping capability VBR (bi - directional) 5 - 170 V. Fast response time: Typically less than PPPSM 600 W. Typical IR less than 1 A above 10V. Compliant to RoHS Directive 2011/65/EU and TJ MAX 150 C. in accordance to WEEE 2002/96/EC Package DO-214AA (SMB). Halogen-free according to IEC 61249-2-21. Configuration Single Die APPLICATIONS. Switching mode power supply (SMPS). MECHANICAL DATA. Case: DO-214AA (SMB).

2 Molding compound meets UL 94V-0 flammability rating Packing code with suffix "G" means green compound (halogen-free). Part no. with suffix H means AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per J-STD-002. Meet JESD 201 class 2 whisker test Polarity: As marked Weight: g (approximately). DO-214AA (SMB). ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted). PARAMETER SYMBOL Part Number UNIT. Non-repetitive peak impulse power dissipation with 10/1000us waveform (1) PPPSM 600 W. Steady state power dissipation at Ptot 3 W. (2). Forward Voltage @ IF=50A for Uni-directional only VF / V. Junction temperature TJ - 55 to +150 C. Storage temperature TSTG - 55 to +150 C. Notes: 1.

3 Non-repetitive Current Pulse Per Fig. 3 and derated above TA=25 C Per Fig. 2. 2. VF= on - SMBJ90 Devices and VF= on SMBJ100 - SMBJ170 Devices Devices for Bipolar Applications 1. For Bidirectional Use C or CA Suffix for Types - Types SMBJ170. 2. Electrical Characteristics Apply in Both Directions 1 Version:O1701. SMBJ SERIES . Taiwan Semiconductor THERMAL PERFORMANCE. PARAMETER SYMBOL LIMIT UNIT. Junction-to-Case Thermal Resistance R JC 10 C/W. Junction-to-Ambient Thermal Resistance R JA 55 C/W. ELECTRICAL SPECIFICATIONS (TA = 25 C unless otherwise noted). Maximum Breakdown voltage Maximum Working peak Maximum VBR@IT blocking Test current stand-off impulse clamping (V) leakage Part number Marking code IT voltage current voltage (Note 1) current (mA) VWM IPP (V) (A) (V).

4 ( A). (Note 2). Min. Max. KD 10 800 KE 10 800 KF 10 800 KG 10 800 KH 10 500 KK 10 500 KL 10 200 KM 10 200 KN 1 100 KP 1 100 KQ 1 50 KR 1 50 KS 1 10 KT 1 10 KU 1 5 KV 1 5 SMBJ10 KW 1 10 5 SMBJ10A KX 1 10 5 SMBJ11 KY 1 11 1 SMBJ11A KZ 1 11 1 SMBJ12 LD 1 12 1 SMBJ12A LE 1 12 1 SMBJ13 LF 1 13 1 SMBJ13A LG 1 13 1 SMBJ14 LH 1 14 1 SMBJ14A LK 1 14 1 SMBJ15 LL 1 15 1 SMBJ15A LM 1 15 1 SMBJ16 LN 1 16 1 SMBJ16A LP 1 16 1 SMBJ17 LQ 1 17 1 SMBJ17A LR 1 17 1 SMBJ18 LS 1 18 1 SMBJ18A LT 1 18 1 SMBJ20 LU 1 20 1 SMBJ20A LV 1 20 1 SMBJ22 LW 1 22 1 SMBJ22A LX 1 22 1 SMBJ24 LY 1 24 1 SMBJ24A LZ 1 24 1 SMBJ26 MD 1 26 1 SMBJ26A ME 1 26 1 2 Version:O1701. SMBJ SERIES . Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25 C unless otherwise noted).

5 Maximum Breakdown voltage Maximum Working peak Maximum VBR@IT Test blocking stand-off impulse clamping (V) current leakage Part number Marking code voltage current voltage (Note 1) IT current VWM IPP (mA) (V) (A) (V). ( A). Min. Max. (Note 2). SMBJ28 MF 1 28 1 SMBJ28A MG 1 28 1 SMBJ30 MH 1 30 1 SMBJ30A MK 1 30 1 SMBJ33 ML 1 33 1 SMBJ33A MM 1 33 1 SMBJ36 MN 1 36 1 SMBJ36A MP 1 36 1 SMBJ40 MQ 1 40 1 SMBJ40A MR 1 40 1 SMBJ43 MS 1 43 1 SMBJ43A MT 1 43 1 SMBJ45 MU 1 45 1 SMBJ45A MV 1 45 1 SMBJ48 MW 1 48 1 SMBJ48A MX 1 48 1 SMBJ51 MY 1 51 1 SMBJ51A MZ 1 51 1 SMBJ54 ND 1 54 1 SMBJ54A NE 1 54 1 SMBJ58 NF 1 58 1 103. SMBJ58A NG 1 58 1 SMBJ60 NH 1 60 1 107. SMBJ60A NK 1 60 1 SMBJ64 NL 1 64 1 114. SMBJ64A NM 1 64 1 103.

6 SMBJ70 NN 1 70 1 125. SMBJ70A NP 86 1 70 1 113. SMBJ75 NQ 102 1 75 1 134. SMBJ75A NR 1 75 1 121. SMBJ78 NS 106 1 78 1 139. SMBJ78A NT 1 78 1 126. SMBJ85 NU 115 1 85 1 151. SMBJ85A NV 104 1 85 1 137. SMBJ90 NW 100 122 1 90 1 160. SMBJ90A NX 100 111 1 90 1 146. SMBJ100 NY 111 136 1 100 1 179. SMBJ100A NZ 111 123 1 100 1 162. SMBJ110 PD 122 149 1 110 1 196. SMBJ110A PE 122 135 1 110 1 177. SMBJ120 PF 133 163 1 120 1 214. SMBJ120A PG 133 147 1 120 1 193. SMBJ130 PH 144 176 1 130 1 231. SMBJ130A PK 144 159 1 130 1 209. SMBJ150 PL 167 204 1 150 1 266. SMBJ150A PM 167 185 1 150 1 243. SMBJ160 PN 178 218 1 160 1 287. SMBJ160A PP 178 197 1 160 1 259. SMBJ170 PQ 189 231 1 170 1 304. 3 Version:O1701. SMBJ SERIES .

7 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25 C unless otherwise noted). Maximum Breakdown voltage Maximum Working peak Maximum VBR@IT Test blocking stand-off impulse clamping (V) current leakage Part number Marking code voltage current voltage (Note 1) IT current VWM IPP (mA) (V) (A) (V). ( A). Min. Max. (Note 2). SMBJ170A PR 189 209 1 170 1 275. Notes: 1. VBR measure after IT applied for 300 s, IT=square wave pulse or equivalent. 2. Surge current waveform per Figure. 3 and derate per Figure. 2. 3. All terms and symbols are consistent with ANSI/IEEE 4. For bidirectional use C or CA suffix for types - SMBJ170. 5. For bipolar types having VWM of 10 volts ( ) and under, the ID limit is doubled.

8 ORDERING INFORMATION. PART NO. PACKING PACKING CODE. PART NO. PACKAGE PACKING. SUFFIX CODE SUFFIX(*). R5 SMB 850 / 7" Plastic reel SMBJ xxxx H R4 G SMB 3,000 / 13" Paper reel (Note 1). M4 SMB 3,000 / 13" Plastic reel Note: 1. "xxxx" defines voltage from ( ) to 170V (SMBJ170A). *: Optional available EXAMPLE P/N. PART NO. PACKING PACKING CODE. EXAMPLE P/N PART NO. DESCRIPTION. SUFFIX CODE SUFFIX. AEC-Q101 qualified SMBJ20 AHR5G SMBJ20A H R5 G Green compound 4 Version:O1701. SMBJ SERIES . Taiwan Semiconductor CHARACTERISTICS CURVES. (TA = 25 C unless otherwise noted). Peak Pulse Power rating Curve Pulse Derating Curve 100 125. PEAK PULSE POWER(PPP) OR CURRENT (IPP) A. NON-REPETITIVE. PPPM, PEAK PULSE POWER, KW.

9 100. DERATING IN PERCENTAGE (%). PULSE WAVEFORM. SHOWN in 10. 75. 50. 1. 25. 0. 1 10 100 1000 10000 0 25 50 75 100 125 150 175 200. tp, PULSE WIDTH, ( s) TA, AMBIENT TEMPERATURE ( C). Clamping Power Pulse Waveform Maximum Non-Repetitive Forward Surge Current 100. 140 Pulse width(td) is defined as the point where the peak IPPM, PEAK PULSE CURRENT (%). IFSM, PEAK FORWARD SURGE A. 120 current decays to 50% of IPPM. 100 Rise time tr=10 s to 100%. CURRENT (A). Peak value 80 IPPM. Half value-IPPM/2 Single Half Sine Wave UNIDIRECTIONAL ONLY. 60. 40. 20 10/1000 s, waveform td 0 10. 0 1 2 3 1 10 100. t, TIME (ms) NUMBER OF CYCLES AT 60 Hz 5 Version:O1701. SMBJ SERIES . Taiwan Semiconductor CHARACTERISTICS CURVES.

10 (TA = 25 C unless otherwise noted). Typical Junction Capacitance 100000. CJ, JUNCTION CAPACITANCE (pF) A. 10000. VR=0. 1000. 100 VR-RATED. STAND-OFF. f= VOLTAGE. Vsig=50mVp-p 10. 1 10 100. V(BR), BREAKDOWN VOLTAGE (V). 6 Version:O1701. SMBJ SERIES . Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS. DO-214AA (SMB). Unit (mm) Unit (inch). DIM. Min Max Min Max A B C D E F G H SUGGESTED PAD LAYOUT. Symbol Unit (mm) Unit (inch). A B C D E MARKING DIAGRAM. P/N = Marking Code G = Green Compound YW = Date Code F = Factory Code 7 Version:O1701. SMBJ SERIES . Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.