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“Solid State HF/6M Power Amplifiers” - AB4OJ

Power Gain (RF output/drive power): MOSFET ≈ 20 d, LDMOS 20 ─ 25 d. – System power gain = device power gain –loss in transformers, hybrids, input pad – Typical values (14 MHz): 15 dB (for US FCC compliance), 20 ─ 23 d other versions. – Device power gain rises ≈ 2 d at 3.5 MHz, falls off ≈ 2 d at 28 MHz (4 d at 50 MHz).

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