Standard Recovery Diodes, (Stud Version), 70 A

1 VS-70HF(R) Semiconductors Revision: 11-Jan-181 Document Number: 93521 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Recovery Diodes,(Stud Version), 70 AFEATURES High surge current capability Designed for a wide range of applications Stud cathode and stud anode version Leaded version available Types up to 1600 V VRRM Designed and qualified for industrial level Material categorization: for definitions of compliance please see APPLICATIONS Converters Power supplies Machine tool controls Battery chargesELECTRICAL SPECIFICATIONSPRIMARY CHARACTERISTICSIF(AV)70 APackageDO-5 (DO-203AB)Circuit configurationSingleDO-5 (DO-203AB)MAJOR RATINGS AND CHARACTERISTICSPARAMETERTEST CONDITIONS70HF(R)UNITS10 TO 120140/160IF(AV)7070 ATC140110 CIF(RMS)110110 AIFSM50 Hz12001200A60 Hz12501250I2t50 Hz71007100A2s60 Hz64506450 VRRMR ange100 to 12001400 to 1600 VTJ-65 to +180-65 to +150 CVOLTAGE RATINGSTYPE NUMBERVOLTAGECODEVRRM, MAXIMUM REPETITIVE PEAKREVERSE VOLTAGEVVRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGEV VR(BR)

2 , MINIMUMAVALANCHE VOLTAGEV IRRM MAXIMUMAT TJ = TJ MAXIMUMmAVS-70HF(R) (R) Semiconductors Revision: 11-Jan-182 Document Number: 93521 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT (1)Recommended for pass-through holes(2)Recommended for holed threaded heatsinksNote The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DCFORWARD CONDUCTIONPARAMETERSYMBOLTEST CONDITIONS 70HF(R)UNITS10 to 120 140/160 Maximum average forward current at case temperatureIF(AV)180 conduction, half sine wave70A140110 CMaximum RMS forward currentIF(RMS)

3 110 AMaximum peak, one cycle forward, non-repetitive surge currentIFSMt = 10 msNo voltage reappliedSinusoidal half wave, initial TJ = TJ maximum1200At = ms1250t = 10 ms100 % VRRM reapplied1000t = ms1050 Maximum I2t for fusingI2tt = 10 msNo voltage reapplied7100A2st = ms6450t = 10 ms100 % VRRM reapplied5000t = ms4550 Maximum I2 t for fusingI2 tt = ms to 10 ms, no voltage reapplied71 000A2 sLow level value of threshold voltageVF(TO)1( % x x IF(AV) < I < x IF(AV)), TJ = TJ level value of threshold voltageVF(TO)2(I > x IF(AV)), TJ = TJ level value of forward slope resistancerf1( % x x IF(AV) < I < x IF(AV)), TJ = TJ High level value of forward slope resistancerf2(I > x IF(AV)), TJ = TJ forward voltage dropVFMIpk = 220 A, TJ = 25 C, tp = 400 s rectangular AND MECHANICAL SPECIFICATIONSPARAMETERSYMBOLTEST CONDITIONS70HF(R)UNITS10 to 120140/160 Maximum junction and storage temperature rangeTJ, TStg-65 to +180 -65 to +150 CMaximum thermal resistance, junction to caseRthJCDC resistance, case to heatsinkRthCSMounting surface, smooth, flat and allowable mounting torque (+0 %, -10 %)Not lubricated thread, tighting on nut (1) (30)N m(lbf in)Lubricated thread, tighting on nut (1) (20)Not lubricated thread, tighting on hexagon (2) (37)Lubricated thread, tighting on hexagon (2)

4 (28)Approximate styleSee dimensions - link at the end of datasheetDO-5 (DO-203AB) RthJC CONDUCTIONCONDUCTION ANGLESINUSOIDAL CONDUCTIONRECTANGULAR CONDUCTIONTEST CONDITIONS UNITS180 = TJ maximumK/W120 (R) Semiconductors Revision: 11-Jan-183 Document Number: 93521 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 1 - Current Ratings CharacteristicsFig. 2 - Current Ratings CharacteristicsFig. 3 - Current Ratings CharacteristicsFig. 4 - Current Ratings CharacteristicsFig. 5 - Forward Power Loss Characteristics1301401501601701800 10 20 30 40 50 60 70 8030 60 90 120 180 Conduction angle70HF(R) series (100 V to 1200 V)RthJC (DC) = K/W Average Forward Current (A)Maximum Allowable Case Temperature ( C) Average Forward Current (A)Maximum Allowable Case Temperature ( C)1201301401501601701800 20 40 60 80 100 120DC30 60 90 120 180 Conduction period70HF(R) series (100 V to 1200 V)RthJC (DC) = K/W Average Forward Current (A)Maximum Allowable Case Temperature ( C)

5 1001101201301401500 10 20 30 40 50 60 70 8030 60 90 120 180 Conduction angle70HF(R) series (1400 V to 1600 V)RthJC (DC) = K/W Average Forward Current (A)Maximum Allowable Case Temperature ( C)901001101201301401500 20 40 60 80 100 120DC30 60 90 120 180 Conduction period70HF(R) series (1400 V to 1600 V)RthJC (DC) = K/W0 20 40 60 80 100 120 140 160 18001020304050607080900 10 20 30 40 50 60 70 80 RMS limitConduction angle180 120 90 60 30 70HF(R) series (100 V to 1200 V)T = 180 CJ Average Forward Current (A)Maximum Average Forward Power Loss (W)Maximum Allowable Ambient Temperature ( C)RthSA = K/W - K/W1 K/W3 K/W2 K/W4 K/W5 K/WVS-70HF(R) Semiconductors Revision: 11-Jan-184 Document Number: 93521 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

6 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 6 - Forward Power Loss CharacteristicsFig. 7 - Forward Power Loss CharacteristicsFig. 8 - Forward Power Loss Characteristics Average Forward Current (A)Maximum Allowable Ambient Temperature ( C)0 20 40 60 80 100 120 140 160 1800204060801001200 20 40 60 80 100 120DC180 120 90 60 30 RMS limitConduction period70HF(R) series (100 V to 1200 V)T = 180 CJRthSA = K/W - K/W1 K/W3 K/W2 K/W5 K/WMaximum Average Forward Power Loss (W) Average Forward Current (A)Maximum Allowable Ambient Temperature ( C)Maximum Average Forward Power Loss (W)

7 0 25 50 75 100 125 15001020304050607080900 10 20 30 40 50 60 70 80 RMS limitConduction angle180 120 90 60 30 70HF(R) series (1400 V to 1600 V)T = 150 CJRthSA = K/W - K/W1 K/W3 K/W4 K/W2 K/W5 K/W0 25 50 75 100 125 150 Maximum Allowable Ambient Temperature ( C)0204060801001200 20 40 60 80 100 120DC180 120 90 60 30 Average Forward Current (A)RMS limitMaximum Average Forward Power Loss (W)Conduction period70HF(R) series (1400 V to 1600 V)T = 150 CJRthSA = K/W - K/W1 K/W3 K/W5 K/W2 K/WVS-70HF(R) Semiconductors Revision: 11-Jan-185 Document Number: 93521 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

8 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 9 - Maximum Non-Repetitive Surge CurrentFig. 10 - Maximum Non-Repetitive Surge CurrentFig. 11 - Forward Voltage Drop CharacteristicsFig. 12 - Thermal Impedance ZthJC CharacteristicsFig. 13 - Forward Voltage Drop Characteristics3004005006007008009001000 11001 10 100 Peak Half Sine Wave Forward Current (A)Number Of Equal Amplitude Half Cycle Current Pulses (N)70HF(R) seriesAt any rated load condition and with rated VRRM applied following TJ = TJ 60 Hz sat 50 Hz s200300400500600700800900100011001200 1 Peak Half Sine Wave Forward Current (A)Pulse Train Duration (s)Maximum non repetitive surge current70HF(R) seriesvs.

9 Pulse train TJ = TJ voltage reappliedRated VRRM reapplied11010010000 1 2 3TJ = 25 CInstantaneous Forward Current (A)Instantaneous Forward Voltage (V)TJ = TJ (R) 1 10 Square Wave Pulse Duration (s)ZthJC - Transient Thermal Impedance (K/W)Steady state valueRthJC = K/W(DC operation) 70HF(R) seriesInstantaneous Forward Voltage (V)Instantaneous Forward Current (A)11010010000 1 2 3 4TJ = 25 CTJ = TJ (R) series (140 to 160)VS-70HF(R) Semiconductors Revision: 11-Jan-186 Document Number: 93521 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

10 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT INFORMATION TABLELINKS TO RELATED code56132470VS-HFR160M215-Voltage code x 10 = VRRM (see Voltage Ratings table)-HF = Standard diode- vishay Semiconductors product43- None = stud normal polarity (cathode to stud) R = stud reverse polarity (anode to stud) None = stud base DO-5 (DO-203AB) 1/4" 28 UNF-2A M = stud base DO-5 (DO-203AB) M6 x 16--70 = Standard device 71 = not isolated lead 72 = isolated lead with silicone sleeve (red = reverse polarity) (blue = normal polarity) Document Number: 95343 For technical questions, contact: 29-Sep-081DO-203AB (DO-5) for 70HF(R) and 71HF(R) SeriesOutline DimensionsVishay Semiconductors DIMENSIONS FOR 70HF(R) series in millimeters (inches)1/4" 28 UNF-2 Afor metric devices: M6 x 1 ( ) ( )4 ( ) ( ) ( ) ( ) (1) ( ) ( ) ( ) technical questions, contact: Number: 953432 Revision: 29-Sep-08 Outline DimensionsVishay SemiconductorsDO-203AB (DO-5) for 70HF(R) and 71HF(R) series DIMENSIONS FOR 71HF(R) series in millimeters (inches) ( ) MAX.