Transcription of Surface Mount TRANSZORB Transient Voltage …
1 smp3v3 thru General Semiconductor Revision: 10-Aug-20181 Document Number: 88481 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Mount TRANSZORB Transient Voltage SuppressorsDESIGN SUPPORT TOOLSFEATURES Very low profile - typical height of mm Ideal for automated placement Available in uni-directional 400 W peak pulse power capability with a 10/1000 s waveform Excellent clamping capability Very fast response time Low incremental surge resistance Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Material categorization.
2 For definitions of compliance please see APPLICATIONSUse in sensitive electronics protection against Voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, and DATACase: SMP (DO-220AA) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and industrial gradeTerminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker testPolarity: color band denotes cathode endNotes(1)Non-repetitive current pulse, per fig.
3 3 and derated above TA = 25 C per fig. 2(2)Mounted on " x " ( mm x mm) copper pads to each terminal(3)Pulse test: 300 s pulse width, 1 % duty cyclePRIMARY CHARACTERISTICSVBR V to V to 36 VPPPM400 WIFSM40 ATJ CPolarityUni-directionalPackageSMP (DO-220AA) SMP (DO-220AA)eSMP SeriesCathodeAnodeclick logo to get startedAvailableModelsMAXIMUM RATINGS (TA = 25 C unless otherwise noted)PARAMETERSYMBOLVALUEUNITPeak pulse power dissipation with a 10/1000 s waveform (fig. 1) (1)(2)PPPM400 WPeak pulse current with a 10/1000 s waveform (1)IPPMSee table next pageAPeak forward surge current 10 ms single half sine-wave (2)IFSM40 AMaximum instantaneous forward Voltage at 25 A (3) junction and storage temperature rangeTJ, TSTG-55 to +150 CSMP3V3 thru General Semiconductor Revision: 10-Aug-20182 Document Number: 88481 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
4 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT (1) VBR measured after IT applied for 300 s, IT = square wave pulse or equivalent(2)Surge current waveform per fig. 3 and derate per fig. 2(3)All terms and symbols are consistent with ANSI/IEEE (1)Mounted on PCB with mm x mm copper pad areas attached to each terminal(2)Mounted on minimum recommended pad layoutELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)DEVICE TYPEDEVICE MARKING CODEBREAKDOWN Voltage VBR AT IT (1) (V) TEST CURRENT IT (mA) STAND-OFF Voltage VWM (V)MAXIMUM REVERSE LEAKAGEAT VWM ID ( A) (3)MAXIMUM PEAK PULSE SURGE CURRENTIPPM (A) (2)MAXIMUM CLAMPING Voltage AT IPPM VC (V) CHARACTERISTICS (TA = 25 C unless otherwise noted)PARAMETERSYMBOLLIMITUNITT ypical thermal resistance, junction to lead (1)
5 R JL50 C/WTypical thermal resistance, junction to ambient (2)R JA250 C/WORDERING INFORMATION (Example)PREFERRED P/NUNIT WEIGHT (g)PREFERRED PACKAGE CODEBASE QUANTITYDELIVERY MODESMP3V3-M3 " diameter plastic tape and reelSMP3V3-M3 00013" diameter plastic tape and reelSMP11A-M3 " diameter plastic tape and reelSMP11A-M3 00013" diameter plastic tape and reelSMP3V3 thru General Semiconductor Revision: 10-Aug-20183 Document Number: 88481 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted)Fig.
6 1 - Peak Pulse Power Rating CurveFig. 2 - Pulse Derating CurveFig. 3 - Pulse WaveformFig. 4 - Typical Junction CapacitanceFig. 5 - Typical Transient Thermal Impedance Non-Repetitive PulseWaveform shown in Fig. 3TA = 25 Ctd - Pulse Width ( s) 000 PPPM - Peak Pulse Power (kW) " x " ( mm x mm)Copper Pad AreasTJ - Initial Temperature ( C)10000150200 Peak Pulse Power (PPP) of Current (IPP)Derating in Percentage (%)251755050752512510075t - Time (ms) - Peak Pulse Current, % = 10 sHalf Value -IPPMIPP210/1000 s Waveformas defined by = 25 CPulse Width (td)is defined as the Pointwhere the Peak Currentdecays to 50 % of IPPMPeak ValueIPPMM easured atZero BiasMeasured atStand-OffVoltage, VWMVWM - Reverse Stand-Off Voltage (V)10 000101100CJ - Junction Capacitance (pF)
7 101000100TJ = 25 Cf = MHzVsig = 50 mVp-pt - Pulse Duration (s) Thermal Impedance ( C/W) thru General Semiconductor Revision: 10-Aug-20184 Document Number: 88481 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT OUTLINE DIMENSIONS in inches (millimeters) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )Cathode ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )SMP (DO-220AA)Legal Disclaimer Revision: 01-Jan-20211 Document Number: 91000 Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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