Transcription of Three Phase Bridge Rectifier, 25 A, 35 A
1 , Semiconductors Revision: 15-Jan-20191 Document Number: 93565 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Phase Bridge Rectifier, 25 A, 35 AFEATURES Universal, 3 way terminals: push-on, wrap around or solder High thermal conductivity package, electrically insulated case Center hole fixing Excellent power/volume ratio UL E300359 approved Nickel plated terminals solderable using lead (Pb)-free solder; solder alloy Sn/Ag/Cu (SAC305).
2 Solder temperature 260 C to 275 C Designed and qualified for industrial and consumer level Material categorization: for definitions of compliance please see range of extremely compact, encapsulated Three Phase Bridge rectifiers offering efficient and reliable operation. They are intended for use in general purpose and instrumentation SPECIFICATIONSPRIMARY CHARACTERISTICSIO25 A, 35 AVRRM50 V to 1600 VPackageD-63 Circuit configurationThree Phase bridgeD-63 MAJOR RATINGS AND CHARACTERISTICSSYMBOLCHARACTERISTICSVALU ES CIFSM50 Hz360475A60 Hz375500I2t50 Hz6351130A2s60 Hz5801030 VRRM50 to 1600 VTJ-55 to +150 CVOLTAGE RATINGSTYPE NUMBERVOLTAGE CODEVRRM, MAXIMUM REPETITIVEPEAK REVERSE VOLTAGEVVRSM.
3 MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGEVIRRM MAXIMUM AT TJ MAXIMUM , Semiconductors Revision: 15-Jan-20192 Document Number: 93565 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 1 - Current Ratings CharacteristicsFig. 2 - Forward Voltage Drop CharacteristicsFORWARD CONDUCTIONPARAMETER SYMBOLTEST CONDITIONS VALUES DC output current at TCIO120 rect.
4 Conduction angle2535A7060 CMaximum peak, one-cycle non-repetitive forward currentIFSMt = 10 msNo voltage reappliedInitial TJ = TJ maximum360475At = ms375500t = 10 ms100 % VRRM reapplied300400t = ms314420 Maximum I2t for fusingI2tt = 10 msNo voltage reapplied6351130A2st = ms5801030t = 10 ms100 % VRRM reapplied450800t = ms410730 Maximum I2 t for fusingI2 tI2t for time tx = I2 t x tx; tx 10 ms, VRRM = 0 V636011 300A2 sLow level of threshold voltageVF(TO)1( % x x IF(AV) < I < x IF(AV)), TJ level of threshold voltageVF(TO)2(I > x IF(AV)), TJ level forward slope resistancert1( % x x IF(AV) < I < x IF(AV)), TJ High level forward slope resistancert2(I > x IF(AV)), TJ forward voltage dropVFMTJ = 25 C, IFM = 40 Apk - per single DC reverse currentIRRMTJ = 25 C, per junction at rated VRRM100 ARMS isolation voltageVINSTJ = 25 C, all terminal shorted.
5 F = 50 Hz, t = 1 s2700 VTHERMAL - MECHANICAL SPECIFICATIONSPARAMETER SYMBOLTEST CONDITIONSVALUES 26 MTVALUES 36 MTUNITSM aximum junction and storage temperature rangeTJ, TStg-55 to +150 CMaximum thermal resistance, junction to caseRthJCDC operation per Bridge (based on total power loss of Bridge ) thermal resistance, case to heatsinkRthCSMounting surface, smooth, flat and weight20gMounting torque 10 % Bridge to heatsink with screw AllowableCase Temperature ( C)Total Output Current (A)5 Series120 (rect.)
6 25~+ Forward Current (A)Instantaneous Forward Voltage (V) SeriesTJ = 25 CTJ = 150 CPer , Semiconductors Revision: 15-Jan-20193 Document Number: 93565 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 3 - Total Power Loss CharacteristicsFig. 4 - Maximum Non-Repetitive Surge CurrentFig. 5 - Maximum Non-Repetitive Surge CurrentFig. 6 - Current Ratings CharacteristicsFig.
7 7 - Forward Voltage Drop Characteristics05102025 Total Output Current (A)Maximum Total Power Loss (W) SeriesTJ = 150 C50453525155120 (rect.)02550100150 Maximum Allowable Ambient Temperature ( C)Maximum Total Power Loss (W)01020304055504535251551 K/W7512510 K/W7 K/W5 K/W4 K/W3 K/W2 K/WRthSA = K/W - R110100 Number of Equal Amplitude Half CycleCurrent Pulses (N)Peak Half Sine WaveForward Current (A)80120160200240280300320At any rated load condition and withrated VRRM applied following 60 Hz sat 50 Hz sInitial TJ = 150 Drain Duration (s)Peak Half Sine WaveForward Current (A)
8 80120160200240320360400 Maximum non-repetitive surge currentversus pulse train voltage reappliedRated VRRM reappliedInitial TJ = 150 Series280040 Maximum AllowableCase Temperature ( C)Total Output Current (A) Series120 (rect.)352030~+ Forward Current (A)Instantaneous Forward Voltage (V) SeriesTJ = 25 CTJ = 150 CPer , Semiconductors Revision: 15-Jan-20194 Document Number: 93565 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 8 - Total Power Loss CharacteristicsFig.
9 9 - Maximum Non-Repetitive Surge CurrentFig. 10 - Maximum Non-Repetitive Surge CurrentFig. 11 - Thermal Impedance ZthJC Characteristics05152535 Total Output Current (A)Maximum Total Power Loss (W)01020406080705030120 (rect.) SeriesTJ = 150 C02550100150 Maximum Allowable Ambient Temperature ( C)Maximum Total Power Loss (W)010203050807060401 K/W7512510 K/W7 K/W5 K/W4 K/W3 K/W2 K/WRthSA = K/W - R110100 Number of Equal Amplitude Half CycleCurrent Pulses (N)Peak Half Sine WaveForward Current (A)100200300400450At any rated load condition and withrated VRRM applied following 60 Hz sat 50 Hz sInitial TJ = 150 Drain Duration (s)Peak Half Sine WaveForward Current (A)
10 100150200250300400450500 Maximum non-repetitive surge currentversus pulse train voltage reappliedRated VRRM reappliedInitial TJ = 150 1 10 Square Wave Pulse Duration (s)ZthJC - Transient ThermalImpedance (K/W) Seriesper state value:RthJC = K/W(DC operation) , Semiconductors Revision: 15-Jan-20195 Document Number: 93565 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 12 - Thermal Impedance ZthJC CharacteristicsORDERING INFORMATION TABLECIRCUIT 1 10 Square Wave Pulse Duration (s)ZthJC - Transient ThermalImpedance (K/W) Seriesper state value.