TRANSZORB Transient Voltage Suppressors

1 Thru , 1N6267A thru General Semiconductor Revision: 11-Oct-161 Document Number: 88301 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Transient Voltage SuppressorsDEVICES FOR BI-DIRECTION APPLICATIONSFor bi-directional types, use CA suffix ( ) Electrical characteristics apply in both Glass passivated chip junction Available in uni-directional and bi-directional 1500 W peak pulse power capability with a 10/1000 s waveform, repetitive rate (duty cycle): % Excellent clamping capability Very fast response time Low incremental surge resistance AEC-Q101 qualified Solder dip 275 C max.

2 10 s, per JESD 22-B106 Material categorization: for definitions of compliance please see APPLICATIONSUse in sensitive electronics protection against Voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive, and DATACase: Molded epoxy body over passivated junction Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3_X - RoHS compliant, and AEC-Q101 qualified ( X denotes revision code A, B, ..)Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker testNote to and to for commercial grade onlyPolarity: For uni-directional types the color band denotes cathode end, no marking on bi-directional typesNotes(1)Non-repetitive current pulse, per fig.

3 3 and derated above TA = 25 C per fig. 2(2)Measured on ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum(3)VF = V for and below; VF = V for and abovePRIMARY CHARACTERISTICSVBR uni-directional V to 540 VVBR bi-directional V to 440 VVWM V to 459 VVWM V to 376 VPPPM 1500 WPD WIFSM (uni-directional only)200 ATJ CPolarityUni-directional, Style RATINGS (TA = 25 C unless otherwise noted)PARAMETERSYMBOLVALUEUNITPeak pulse power dissipation with a 10/1000 s waveform (1) (fig. 1)PPPM1500 WPeak pulse current with a 10/1000 s waveform (1) IPPMSee next tableAPower dissipation on infinite heatsink at TL = 75 C (fig.)

4 5) forward surge current ms single half sine-wave uni-directional only (2)IFSM200 AMaximum instantaneous forward Voltage at 100 A for uni-directional only (3) junction and storage temperature rangeTJ, TSTG-55 to +175 thru , 1N6267A thru General Semiconductor Revision: 11-Oct-162 Document Number: 88301 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT (1) Pulse test: tp 50 ms(2) Surge current waveform per fig. 3 and derate per fig. 2(3) All terms and symbols are consistent with ANSI/IEEE (4) For bi-directional types with VR 10 V and less the ID limit is doubled(+) Underwriters laboratory recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number E136766 for both uni-directional and bi-directional devicesELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)JEDEC TYPE NUMBERGENERALSEMICONDUCTORPART NUMBER BREAKDOWN Voltage VBR AT IT (1)(V) TEST CURRENT IT(mA)STAND-OFF VOLTAGEVWM (V)MAXIMUMREVERSELEAKAGE AT VWM ID (4) ( A) MAXIMUMPEAK PULSE CURRENT IPPM (2)

5 (A) MAXIMUMCLAMPINGVOLTAGE AT IPPMVC (V) MAXIMUM TEMPERATURE COEFFICENT OF VBR(%/ C) (+) (+) (+) (+) (+) (+) (+) (+) (+) (+) (+) (+) (+) (+) (+) (+) (+) (+) (+) (+) (+) (+) (+) (+) (+) (+) (+) (+) (+) (+) (+) (+) (+) (+) (+) (+) (+) (+) thru , 1N6267A thru General Semiconductor Revision: 11-Oct-163 Document Number: 88301 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

6 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT (1)AEC-Q101 qualified(2)Applied for to , and to AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted)Fig. 1 - Peak Pulse Power Rating CurveFig. 2 - Pulse Power or Current vs. Initial Junction TemperatureFig. 3 - Pulse WaveformFig. 4 - Typical Junction CapacitanceTHERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted)PARAMETERSYMBOLVALUEUNITT ypical thermal resistance, junction to ambientR JA75 C/ WTypical thermal resistance, junction to leadR INFORMATION (Example)PREFERRED PINUNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITYDELIVERY " diameter paper tape and (1)(2) " diameter paper tape and s10 s100 ms10 mstd - Pulse Width (s)PPPM - Peak Pulse Power (kW)10075502500255075100125150175200 Peak Pulse Power (PPP) or Current (IPP)Derating in Percentage, %TJ - Initial Temperature ( C)

7 050100150tr = 10 sPeakValueIPPMHalf Value -IPPMIPP2td10/1000 s Waveformas definedby - Time (ms)IPPM - Peak Pulse Current, % IRSMTJ = 25 CPulse Width (td)is defined as the Pointwhere the Peak Currentdecays to 50 % of IPPM51010050010100100010 000 Uni-DirectionalBi-DirectionalVR = 0VR = RatedStand-Off VoltageTJ = 25 Cf = MHzVsig = 50 mVp-pVBR - Breakdown Voltage (V)CJ - Capacitance (pF) thru , 1N6267A thru General Semiconductor Revision: 11-Oct-164 Document Number: 88301 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 5 - Power Derating CurveFig.

8 6 - Maximum Non-Repetitive Forward Surge Current Uni-Directional onlyFig. 7 - Incremental Clamping Voltage Curve (Uni-Directional)Fig. 8 - Incremental Clamping Voltage Curve (Uni-directional)Fig. 9 - Incremental Clamping Voltage Curve (Bi-directional)Fig. 10 - Incremental Clamping Voltage Curve (Bi-Directional) 0 0 25 50 75 100 125 150 175 200PD - Power Dissipation (W)TL - Lead Temperature ( C)L = " ( mm) Lead Lengths 11010010100200TJ = TJ ms Single Half Sine-WaveNumber of Cycles at 60 HzPeak Forward Surge Current (A) :8/20 s - Peak Pulse Current (A) VC - Incremental Clamping Voltage VC = VC - VC - Incremental Clamping VoltageWaveform:10/1000 s Impulse VC = VC - - Peak Pulse Current (A).

9 10/1000 s ImpulseIPP - Peak Pulse Current (A) VC - Incremental Clamping Voltage VC = VC - - Peak Pulse Current (A)Waveform:8/20 s Impulse VC - Incremental Clamping Voltage VC = VC - thru , 1N6267A thru General Semiconductor Revision: 11-Oct-165 Document Number: 88301 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 11 - Instantaneous Forward Voltage Characteristics CurveFig. 12 - Typical Transient Thermal ImpedancePACKAGE OUTLINE DIMENSIONS in inches (millimeters)APPLICATION NOTES This series of Silicon Transient Suppressors is used in applications where large Voltage transients can permanently damage Voltage -sensitive components.

10 The TVS diode can be used in applications where induced lightning on rural or remote transmission lines presents a hazard to electronic circuitry (ref: specification 60). This Transient Voltage Suppressor diode has a pulse power rating of 1500 W for 1 ms. The response time of TVS diode clamping action is effectively instantaneous (1 x 10-9 s bi-directional); therefore, they can protect integrated circuits, MOS devices, hybrids, and other Voltage sensitive semiconductors and components. TVS diodes can also be used in series or parallel to increase the peak power 1 10 100 Instantaneous Forward Current (A)Instantaneous Forward Voltage (V)TJ = 25 CPulse Width = 300 s1 % Duty - Pulse Duration (s) Transient Thermal Impedance ( C/W) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) Style Disclaimer Revision: 08-Feb-171 Document Number: 91000 Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.