Ultra-Fast Avalanche Sinterglass Diode

1 BYV26A, BYV26B, BYV26C, BYV26D, Semiconductors Rev. , 21-Feb-181 Document Number: 86040 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Avalanche Sinterglass DiodeDESIGN SUPPORT TOOLSMECHANICAL DATACase: SOD-57 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode endMounting position: anyWeight: approx. 369 mgFEATURES Glass passivated junction Hermetically sealed package Very low switching losses Low reverse current High reverse voltage Material categorization: for definitions of compliance please see Switched mode power supplies High-frequency inverter circuits 949539click logo to get startedAvailableModelsORDERING INFORMATION (Example)DEVICE NAMEORDERING CODETAPED UNITSMINIMUM ORDER QUANTITYBYV26 EBYV26E-TR5000 per 10" tape and reel25 000 BYV26 EBYV26E-TAP5000 per ammopack25 000 PARTS TABLEPARTTYPE DIFFERENTIATIONPACKAGEBYV26 AVR = 200 V; IF(AV) = 1 ASOD-57 BYV26 BVR = 400 V; IF(AV) = 1 ASOD-57 BYV26 CVR = 600 V; IF(AV) = 1 ASOD-57 BYV26 DVR = 800 V; IF(AV) = 1 ASOD-57 BYV26 EVR = 1000 V.

2 IF(AV) = 1 ASOD-57 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified)PARAMETERTEST CONDITIONPARTSYMBOLVALUEUNITR everse voltage = repetitive peak reverse voltageSee electrical characteristicsBYV26 AVR = VRRM200 VBYV26 BVR = VRRM400 VBYV26 CVR = VRRM600 VBYV26 DVR = VRRM800 VBYV26 EVR = VRRM1000 VPeak forward surge currenttp = 10 ms, half sine waveIFSM30 AAverage forward currentIF(AV)1 ANon repetitive reverse Avalanche energyI(BR)R = 1 A, inductive loadER10mJJunction and storage temperature rangeTj = Tstg-55 to +175 CBYV26A, BYV26B, BYV26C, BYV26D, Semiconductors Rev. , 21-Feb-182 Document Number: 86040 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)Fig.

3 1 - Max. Reverse Power Dissipation vs. Junction TemperatureFig. 2 - Max. Reverse Current vs. Junction TemperatureMAXIMUM THERMAL RESISTANCE (Tamb = 25 C, unless otherwise specified)PARAMETERTEST CONDITIONSYMBOLVALUEUNITJ unction ambientl = 10 mm, TL = constantRthJA45K/WELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)PARAMETERTEST voltageIF = 1 = 1 A, Tj = 175 currentVR = VRRMIR--5 AVR = VRRM, Tj = 150 CIR--100 AReverse breakdown voltageIR = 100 ABYV26AV(BR)R300--VBYV26BV(BR)R500--VBYV 26CV(BR)R700--VBYV26DV(BR)R900--VBYV26EV (BR)R1100--VReverse recovery timeIF = A, IR = 1 A, iR = ABYV26 Atrr--30nsBYV26 Btrr--30nsBYV26 Ctrr--30nsBYV26 Dtrr--75nsBYV26 Etrr--75ns040801201600100200300400600PR - Max. Reverse Power Dissipation (mW)Tj - Junction Temperature ( C)200959728500VR = VRRM200 V1000 V400 V600 V800 VRthJA = 45 K/WRthJA = 100 K/W040801201602009597291101001000IR - Reverse Current ( A)Tj - Junction Temperature ( C)VR = , BYV26B, BYV26C, BYV26D, Semiconductors Rev.

4 , 21-Feb-183 Document Number: 86040 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 3 - Max. Average Forward Current vs. Ambient TemperatureFig. 4 - Max. Reverse Current vs. Junction TemperatureFig. 5 - Diode Capacitance vs. Reverse VoltageFig. 6 - Diode Capacitance vs. Reverse VoltagePACKAGE DIMENSIONS in millimeters (inches): - Ambient Temperature ( C) = 45 K/WIFAV - Average Forward Current (A)RthJA = 100 - Forward Current (A)VF - Forward Voltage (V)Tj = 175 C10234567Tj = 25 C051015202530354016380f = 1 - Reverse Voltage (V)CD - DiodeCapacitance (pF)16381f = 1 - Reverse Voltage (V)CD - Diode Capacitance (pF) ( ) ( ) min.

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