Versa 3D DualBeam - FEI

1 Versa 3D DualBeam Versatility for demanding 3D characterization, prototyping and in situ research needs Building on the history and success The ultra-large chamber allows addition of a variety of accessories and detectors to support a broad range of of FEI's pioneering DualBeam , imaging and analytical techniques, accessing information from every angle. high-resolution, low vacuum and With Versa 3D the choice is yours to optimize the system ESEM expertise, FEI introduces the for conductive samples in high vacuum; non-conductive samples with low vacuum; or expand the horizons of research to most versatile DualBeam instrument dynamic applications. to date. The Versa 3D offers KEY BENEFITS. state-of-the-art imaging and DualBeam functionality to examine surface and sub-surface areas analytical performance to deliver a of any sample (sample modification at the nm and m scale).

2 High quality TEM and atom probe sample preparation with low greater range of 3D data from even voltage cleaning for atomic level study by TEM/atom probe. your most challenging samples. Easily examine conductive and non-conductive samples in the high and low vacuum configured system. Versa 3D's highly configurable platform allows customers to 3D characterization of a wide range of material types with a suite adapt the system's capabilities to their specific requirements. of detectors* to obtain information from every angle. Versa 3D provides the flexibility to work with a range of ESEM* option enables dynamic experiments involving gas* and samples including uncoated, non-conductive samples. thermal control*. Optional ESEM mode allows electron beam imaging of Full complement of software* to perform advanced tasks like naturally hydrated samples and supports in situ analysis and 3D volume slicing for characterization, sample preparation and experimentation with additional dynamic temperature stages.

3 Prototyping from CAD or image files. The high-current Focused Ion Beam (FIB) enables fast material removal and low voltage clean-up for low-damage surface finishing in high vacuum mode. Gas chemistries are available for depositing materials or enhancing FIB milling rate or selectivity. Non-conductive samples are easily milled with the automated Drift Suppression milling mode. This is also supported in the optional Auto Slice & View software which can be extended to gather EDS or EBSD data from successive slices. With advanced automation, Versa 3D can acquire images at high vacuum, low voltage and use high or low vacuum for higher voltage imaging and analysis, optimizing conditions for each detector to enhance 3D data segmentation for quantitative 3D reconstruction.

4 Standard FEG Low vacuum Probe current: pA to 200 nA Patented through-the-lens differential (continuously adjustable) pumping in low vacuum equipped Normal and Analytical modes systems C. ontrol of beam spread (skirting) in low Ion beam resolution vacuum with x-ray cone for beam-gas- 7 nm at 30 kV at beam coincident point path-length of 10 or 2 mm (5 nm achievable at optimal working distance) Seamless transition between high and low vacuum High throughput ion column optics Imaging gas in low vacuum: water vapor High-current ion column with Ga liquid- metal ion source for use in high vacuum ESEM option Acceleration voltage: to 30 kV Extended vacuum range to 4000 Pa Probe current: pA to 65 nA in 15 steps I maging gas in ESEM: water vapor or auxiliary gas Versa 3D essential specifications Superior high current performance, with.

5 Electron optics Software interface enabled for -- up to 60 A/cm2 beam current density dynamic stage controllers* such as the High-resolution field emission SEM. column optimized for high-brightness/ -- up to 65 nA max beam current Cold Stage*, WetSTEM*, 1000 C Hot high-current Beam blanker standard, external control Stage* and 1400 C Hot Stage* (sold possible separately). Schottky thermal field emitter 6. 0 degree objective lens geometry with M. agnification: 40 x to 1280 kx in quad . through-the-lens differential pumping mode at 10 kV. H. eated objective apertures to extend Charge neutralization mode for milling of aperture lifetime non-conductive samples Accelerating voltage: 200 V to 30 kV S. ource Lifetime: 1,300 hours/2,600uA. hours guaranteed Beam deceleration stage bias*: -50 V to -4 kV Chamber vacuum Landing voltage range: Pump-down time (high vacuum): < 210 Seconds -- Standard: 200 V to 30 kV.

6 High vacuum: < 6e-4 Pa -- Beam Deceleration*: 20 V to 30 kV. Low vacuum*: 10 to 200 Pa M. agnification: 30 x to 1280 kx in quad mode ESEM vacuum*: 10 to 4000 Pa Electron source lifetime: 12 months ELECTRON BEAM RESOLUTION TABLE (nm) Versa 3D CONFIGURATION. LoVac LoVac/ESEM. High Vacuum Mode 30 kV SE resolution 30 kV SE resolution with Plasma Cleaner* (PC) 30 kV STEM resolution 30 kV BSE resolution 15 kV SE resolution with PC* 1. 3 1. 3. 1 kV SE resolution 1 kV SE resolution with Beam Deceleration* + In-column Detector* & PC* Low Vacuum Mode*. 30 kV SE resolution 30 kV BSE resolution 3 KV SE resolution ESEM Mode*. 30 kV SE resolution 3 kV SE resolution * = optional 2 FEI Explore. Discover. Resolve. Vacuum system Detectors Support for single command to save of all 1 x 240 l/s TMP Everhart-Thornley SE detector (ETD) Quadrant images 1 x PVP oil-free (scroll-pump) IR camera for viewing sample/column Direct AVI recording 2 x IGP (for electron column) Chamber integrated Nav-Cam+ * Serial TIFF collection/saving 1 x IGP (for ion column) H.

7 Igh performance Ion Conversion and F EI Movie Creator (software to create Electron (ICE) detector for secondary ions AVI from TIFF series including data bar Chamber (SI) and electrons (SE)* content control). E- and I-beam coincidence point at analytical WD (10 mm SEM) R. etractable Directional Backscatter F EI SPI, iSPI, iRTM for advanced, (DBS)* real-time process monitoring and Angle between electron and ion columns: 52 . I n-column Detector (ICD) for use with endpointing Standard 5-axes motorized stage Beam Deceleration* P. atterns supported: lines, rectangles, X,Y: 110 mm polygons, circles, donut, cross-section R. etractable STEM detector with BF/DF/. Z: 65 mm motorized HAADF segments* and cleaning cross-section T: -15 to +90 Integrated beam current measurement Image registration R: n x 360 (endless) D.

8 Irectly imported BMP file or streamfile System control for 3D milling and deposition X,Y repeatability: m 32-bit GUI with Windows 7, keyboard, optical mouse Material file support for milling/. S. ample weight: 500 g in any stage deposition minimum loop time', beam position (up to 2 kg at 0 deg tilt) Microscope Control Computer tuning and independent overlaps M. aximum clearance between stage and -- Intel Processor/ GHz or better coincidence point: 85 mm at eucentric Common accessories -- 500 GB system hard drive height Gas Injection System (GIS): up to 5 unit -- 12 GB RAM for enhanced etch or deposition (other Maximum sample size: -- Firewire and Ethernet support accessories or options may limit number -- 1 50 mm diameter with full rotation of GIS available).

9 (larger samples possible with limited One 24-inch LCD displays, WUXGA. 1920 x 1200 GIS Beam chemistry options rotation). S. upport PC* and (second) 24 LCD display -- Platinum deposition Optional high precision 5-axes motorized (matching system monitor) with Windows -- Tungsten deposition stage* 7 & MagicSwitch (software controlled X, Y: 150 mm, piezo-driven -- Carbon deposition Switchbox for one keyboard and mouse Z: 10 mm motorized system control)* -- Insulator deposition II. T: -10 to +60 A. dditional 24-inch LCD display*, -- Gold deposition R: n x 360 (endless), piezo-driven WUXGA 1920 x 1200 -- Enhanced Etch (iodine, patented). X , Y repeatability: m Joystick* -- Insulator enhanced etch (XeF2). M. aximum size: 150 mm diameter M. anual User Interface (multifunctional -- Delineation Etch (patented).)

10 With full rotation (larger samples possible control panel)* -- Selective Carbon Mill (patented). with limited rotation) Image processor & supporting software -- E. mpty crucibles for FEI approved Maximum clearance between stage Dwell time range: 25 ns to 25 ms/pixel user supplied materials and coincidence point: 55 mm Up to 6144 x 4096 pixels in situ sample lift-out system Weight: max. 500 g (FEI EasyLift or other manipulators). S. martSCAN (256 frame average or Sample holders integration, line integration and Plasma Cleaner (PC). Single stub mount, mounts directly averaging, interlaced scanning) Beam Deceleration (BD) mode onto stage Drift Compensated Frame Integration (DCFI) Charge Neutralizer V. ise Specimen Holder to clamp irregular, Single frame or 4-quad image display Integrated Fast Beam Blanker large or heavy specimens to the Beam per quad' graphical user interface E.