ViSHAY iNTERTECHNOLOGY, iNC. BARE DiE

1 TABLE OF CONTENTSI ntroduction to Bare Die ..02 Die Portfolio ..03 Nomenclature ..03 Schottky Diodes ..05 Ultrafast FRED Pt Diodes ..09 High Voltage Standard / Soft Recovery Diodes ..12 Thyristors ..15 TVS ..17 Zener, ESD Protection, and Switching Diodes ..22 Packing Options ..24 RESOURCES For technical support contact For more information contact or Signal Bare Dies Are Available Upon DiEViSHAY intertechnology , DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT WORLD OFSOLUTIONS 2018 ViSHAY intertechnology , INC.

2 ALL RIGHTS Die Products Accommodate a Variety of Assembly Techniques and ApplicationsBare DieVishay supplies a wide range of power diodes in bare die and wafer form: Schottky diodes Fred Pt ultrafast diodes HEXFRED ultrafast diodes TVS diodes High voltage standard / fast diodes ThyristorsPacking TypesVishay delivers its bare die products in several versions to accommodate a wide variety of assembly techniques and applications: Unsawn wafer: the wafers are delivered in a sealed bag and die are not singulated Sawn wafer on film: the wafer is sawn and supplied on blue tape in a plastic frame Die in tape and reel: each die is located in a pocket on a continuous antistatic coated reel Waffle pack: each die is in a trayDie Usage Basic GuidelinesBare die products require careful handling and storage as well as optimized assembly processes and tools to avoid damage and deviations from expected performance.

3 The following hints are based on ViSHAY s many years of experience in manufacturing and assembling semiconductor AttachSilicon cannot be joined to copper without the occurrence of thermal shock due to the significant difference in thermal conductivity between these materials. For this reason, and to ensure optimized electrical conductivity, ViSHAY wafers are coated on the back side with two or three metallic solderable layers, which are suitable for a wide range of solders, ranging from solder alloys to conductive epoxies.

4 Fluxes are not recommended for solders because residuals can contaminate the surface of the die and cause voids under the die, thus compromising heat dissipation and electrical performance. In general the safest approach is to adopt the same materials ViSHAY uses in the assembly of die into discrete packaged parts. ViSHAY experts can help you choose the best materials for your assembly BondingVishay die are typically covered with an aluminum metalization, that contains a small percentage of silicon (~1 %) for ultrasonic bonding or thermosonic bonding, depending on whether aluminum or gold wires are adopted.

5 The application of wires in parallel and stitch bonding provides protection against surge current in the vicinity of soldered chips. Several platforms are also provided with solderable metalization on the anode side, which is suitable for solder Signal Bare Dies Are Available Upon DiEViSHAY intertechnology , DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 2018 ViSHAY intertechnology , INC. ALL RIGHTS Die Naming Rules for Schottky, FRED Pt , HEXFRED , and TVS DiodesSC105H100A5 PRNP roduct TypeSX = Planar Schottky Fab 1TY = Trench Schottky Fab 1TV = PAR TVSSC = Schottky Torino Fab 2FD = FRED Pt UltrafastH2 = HEXFRED Ultrafast Gen 2H3 = HEXFRED Ultrafast Gen 3 ChipsizeinmilsProcessFor SchottkyR = Tj max.

6 125 CS = Tj max. 150 CH = Tj max. 175 CT = Trench Schottky Fab2 For TVS PARB = Named as VbrT = Named as VwmL = Load dump rectifier named as VbrFor FRED is SPEED codeW = 14 ns to 17 nsH = 18 ns to 35 nsU = 36 ns to 50 nsC = 51 ns to 70 nsS = 71 ns to 90 nsL = 91 ns to 120 nsT = 121 ns to 150 nsZ = 151 ns to 200 nsFor HEXFREDH = Gen 2D = Gen 3E = Gen 3 VoltageSurface MetalA = WirebondableTopside: Ti / Al, Ti / Ni / Al or Pure Al or Al (1 % Si)Backside: Ti / Ni / Ag or CrNiAgS = SolderableTopside: Ni / Au or Ti / Ni / AgBackside.

7 Ni / Au or Ti / Ni / Ag or CrNiAgM = Wirebondable for medicalTopside: Ti / Al or Pure AlBackside: Ti / Ni / AuNote: Ti ( m) / Ni ( m) / Au ( m)WaferDiameter4 = 4 in5 = 5 in6 = 6 inQuality Level (if Defined)P = Packaged die for T1O = Packaged die for T2N = Non-packaged dieT = Known tested dieG = Known good dieQuality level for Taipei onlyPackagingB = Inked probed unsawn wafer (wafer in box)P = Probed die in waffle packD = Probed die in waffle pack (HEXFRED only)F = Inked probed sawn wafer on filmR = Probed die in tape and 13 in reelT = Probed die in 12 mm tape and 4 mm pitch, 7 in reel (for 35 to 75 mil chip)U = Probed die in 12 mm tape and 4 mm pitch, 7 in reel (for 76 to 110 mil chip)V = Probed die in 12 mm tape and 8 mm pitch, 7 in reel (for 111 to 300 mil chip)C = Probed die in plastic can (bulk)Passivation (Valid for FRED Pt Only)None = SiO2N = Silicon nitrideThickness (Valid for Schottky Torino Fab Only)

8 None = Standard 14 milsT = 10 milsDigit always presentDigit might miss (see legend)Bare Die Naming Rule for High Voltage Standard / Fast Diodes VS180DM12CS02 CBVishay SemiconductorChip size in milsProcessDM = Standard recovery diode glassivated moatLM = Fast recovery diode glassivated moatVoltage Code x 100 06 = 600 V 08 = 800 V 10 = 1000 V 12 = 1200 V 16 = 1600 VSurface MetalC = WirebondableTopside: 100 % AlBackside: Cr / Ni / AgH = SolderableTopside: Cr / Ni / AgBackside: Cr / Ni / AgSpeed CodeNone = Standard recoveryS02 = 200 nsS05 = 500 nsPackagingCB = Probed uncut die (wafer in box)None = Probed die in chip carrierBARE DiEViSHAY intertechnology , DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

9 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 2018 ViSHAY intertechnology , INC. ALL RIGHTS Bare Die Naming Rule for Thyristors VS180BG12 DCBV ishay SemiconductorChip size in milsSurface MetalB = WirebondableTopside: 100 % AlBackside: Cr / Ni / AgS = SolderableTopside: Cr / Ni / AgBackside: Cr / Ni / AgPassivation ProcessG = Glassivated mesaVoltage Code x 100 06 = 600 V 12 = 1200 V 16 = 1600 VMetallizationD = WirebondableTopside: 100 % AlBackside: Cr / Ni / AgH = SolderableTopside: Cr / Ni / AgBackside.

10 Cr / Ni / AgPackagingCB = Probed uncut die (wafer in box)None = Probed die in chip carrierDigit always presentDigit might miss (see legend)BARE DiEViSHAY intertechnology , DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 2018 ViSHAY intertechnology , INC. ALL RIGHTS Diode FeaturesSchottky diodes are designed for very fast switching between the forward and the reverse direction of the diode. Their metal-semiconductor junction provides a low forward voltage drop compared to p-n diodes.