The Bandgap
Found 5 free book(s)Lecture 12: Photodiode detectors
www-eng.lbl.govThe bandgap for direct absorption in silicon is 4.10 eV, corresponding to a threshold of 0.3 m. Germanium is another semiconductor material for which the lowest energy absorption takes place by indirect optical transitions. Indirect absorption will occur up to a threshold of 1.85 m.
The Bandgap Reference - University of California, Los Angeles
www.seas.ucla.eduLow-Voltage Bandgap References The basic bandgap expression, VV BE +17.,2 T takes on a value of about 1.25 V at T = 300K, defying direct implementation in today’s low-voltage technologies. We describe one low-voltage example and refer the reader to [10] and [11] for others. For a low-voltage bandgap reference to have a zero TC, it must produce an
Metal/Semiconductor Ohmic Contacts - Stanford University
web.stanford.eduBandgap Engineering Contact resistance depends on barrier height. It is possible to use a lower bandgap material in the source/drain such as Si1-xGex. Band gap of Si1-xGex reduces as compared to Si as Ge fraction increases. • Si1-xGex S/D & germanosilicide contact − Assuming metal Fermi level is pinned near midgap
LOW DROPOUT LINEAR REGULATOR - Diodes Incorporated
www.diodes.comIts circuit includes a trimmed bandgap reference to assure output voltage accuracy to be within ±1%. On-chip thermal shutdown provides protection against a combination of high current and ambient temperature that would create excessive junction temperature. The AZ1117C is available in 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, 5.0V fixed ...
Description Pin Assignments - Diodes Incorporated
www.diodes.comThe AP7361C is available in U-DFN3030-8 (Type E), SOT89-5, SOT223, TO252 (DPAK) and SO-8EP packages. Features • Wide Input Voltage Range: 2.2V to 6.0V