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The Bandgap

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Lecture 12: Photodiode detectors

www-eng.lbl.gov

The bandgap for direct absorption in silicon is 4.10 eV, corresponding to a threshold of 0.3 m. Germanium is another semiconductor material for which the lowest energy absorption takes place by indirect optical transitions. Indirect absorption will occur up to a threshold of 1.85 m.

  Bandgap, The bandgap

The Bandgap Reference - University of California, Los Angeles

www.seas.ucla.edu

Low-Voltage Bandgap References The basic bandgap expression, VV BE +17.,2 T takes on a value of about 1.25 V at T = 300K, defying direct implementation in today’s low-voltage technologies. We describe one low-voltage example and refer the reader to [10] and [11] for others. For a low-voltage bandgap reference to have a zero TC, it must produce an

  Bandgap, The bandgap

Metal/Semiconductor Ohmic Contacts - Stanford University

web.stanford.edu

Bandgap Engineering Contact resistance depends on barrier height. It is possible to use a lower bandgap material in the source/drain such as Si1-xGex. Band gap of Si1-xGex reduces as compared to Si as Ge fraction increases. • Si1-xGex S/D & germanosilicide contact − Assuming metal Fermi level is pinned near midgap

  Band, Bandgap, Band gap

LOW DROPOUT LINEAR REGULATOR - Diodes Incorporated

www.diodes.com

Its circuit includes a trimmed bandgap reference to assure output voltage accuracy to be within ±1%. On-chip thermal shutdown provides protection against a combination of high current and ambient temperature that would create excessive junction temperature. The AZ1117C is available in 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, 5.0V fixed ...

  Bandgap

Description Pin Assignments - Diodes Incorporated

www.diodes.com

The AP7361C is available in U-DFN3030-8 (Type E), SOT89-5, SOT223, TO252 (DPAK) and SO-8EP packages. Features • Wide Input Voltage Range: 2.2V to 6.0V

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