Transcription of Metal/Semiconductor Ohmic Contacts - Stanford University
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Metal/Semiconductor Ohmic Contacts - Stanford University
EE311 notes/ SaraswatMetal/Semiconductor Ohmic ContactsRcsdRdpRextRovxy = 0 GateSidewallSilicideNext(x)Nov(y)Year199 719992003200620092012 Min Feature Contact xj (nm)100-20070-14050-10040-8015-3010-20xj at Channel (nm) components of the resistance associated with the S/D junctions of a MOS will be a dominant component for highly scaled nanometer transistor (Rcsd/Rseries >> ~ 60 % for LG < 53 nm)32 nm53 nm70 nm100 nm010203040506070 RdpRextRovRcsdNMOSP hysical Gate Length Relative Contribution [%] 30 nm50 nm70 nm100 nm020406080100120140 NMOSS caled by ITRS Roadmap RcsdRdpRextRovTechnology or Gate LengthSeries Resistance (ohms)EE311 / Saraswat Ohmic Contacts232 nm53 nm70 nm100 nm010203040506070 Physical Gate LengthRdpRovRextRcsdPMOS Relative Contributio
Bandgap Engineering Contact resistance depends on barrier height. It is possible to use a lower bandgap material in the source/drain such as Si1-xGex. Band gap of Si1-xGex reduces as compared to Si as Ge fraction increases. • Si1-xGex S/D & germanosilicide contact − Assuming metal Fermi level is pinned near midgap
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