4. CONDUCTION LOSSES - Purdue Engineering

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54 4. CONDUCTION LOSSES In this chapter, CONDUCTION LOSSES for a power switching transistor and power diode are measured and characterized. A static procedure for measuring IGBT and power diode CONDUCTION LOSSES is set forth in section section describes the development of the proposed CONDUCTION loss model. CONDUCTION Loss Measurement The hardware configuration used to measure CONDUCTION LOSSES is set forth in Figure Fig. Hardware Test Configuration for IGBT Static LOSSES For the purposes of demonstration, the transistor and diode considered herein are the upper IGBT and diode of the U leg of a 30A, 600V device (Fuji Electric 7MBR30SA060) [18] commonly used for inverter motor drives. The IGBT is turned on with the gate driver, and the current through the device is then adjusted through its full range.

4. CONDUCTION LOSSES In this chapter, conduction losses for a power switching transistor and power diode are measured and characterized. A static procedure for measuring IGBT and power diode conduction losses is set forth in Section 4.1. Section 4.2 describes the development of the proposed conduction loss model. ...

  Section, Engineering, Power, Losses, Conduction, Purdue, Purdue engineering, Conduction losses