General Description Product Summary
AO340730V P-Channel MOSFETGeneral DescriptionProduct SummaryVDS ID (at VGS= -10V) RDS(ON) (at VGS= -10V)< 52m RDS(ON) (at VGS = )< 87m SymbolVDSThe AO3407 uses advanced trench technology to provideexcellent RDS(ON) with low gate charge. This device issuitable for use as a load switch or in PWM Maximum Ratings TA=25 C unless otherwise noted-30VDrain-Source Voltage-30SOT23Top View Bottom View DGSGSDGDSVGSIDMTJ, TSTGSymbolt 10sSteady-StateSteady-StateR Junction-to-Lead C/W C/WMaximum Junction-to-Ambient A D6312580Maximum Junction-to-Ambient CTA=70 CPulsed Drain Current CContinuous DrainCurrentV 20Gate-Source VoltageParameterTypMax C/WR CJunction and Storage Temperature Range-55 to 150 CThermal CharacteristicsPower Dissipation BPDTA=25 CW Rev 5.
AO3407 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 0 2 4 6 8 10 0 2 4 6 8 10-V GS (Volts) Qg (nC) Figure 7: Gate-Charge Characteristics 0 200 400 600 800 0 5 10 15 20 25 30
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