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Lecture 8 - MIT

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Spring 2007Lecture 81Lecture 8MOSFET(I)MOSFET I-V : cross-section, layout, characteristicsReading Assignment:Howe and Sodini, Chapter 4, Sections :Quiz#1, March 14, 7:30-9:30PM, Walker Memorial; covers Lectures #1-9; open book; must have Spring 2007Lecture 821. MOSFET: layout, cross-section, symbols Inversion layer under gate(depending on gate voltage) Heavily doped regions reach underneath gate inversion layer to electrically connect sourceand drain 4-terminal device: bodyvoltage importantKey elements: deposited oxidefieldoxiden+ drain diffusiondraininterconnect p+[ p-type ]bulkinterconnectLdiffgate contact(a) Adraincontactsbulkcontactn+ polysilicon gate active area (thinoxide area)polysilicon gatecontactmetalinterconnectn+ source diffusionedge ofactive area sourceinterconnect(b)Ln+ polysilicon gate gate oxidegateinterconnectsource Spring 2007Lecture 83Circuit symbolsTwo complementary devices.

field that drifts the inversion charge from the source to drain Want to understand the relationship between the drain current in the MOSFET as a function of gate-to-source ... See discussion on body effect in Section 4.4 of text. 6.012 Spring 2007 Lecture 8 10 I-V Characteristics (Contd..)

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