Optimizing MOSFET Characteristics by Adjusting …
1IntroductionApplicationReportSLUA341 , , ,driverICsandPWMcontrollers, ,resultsinalowerassociatedon-resistance, RDS(on), ,loweringtheMOSFETon-resistanceisespecia llycriticalforthesynchronousrectifier, ,however, , ,ahighergatechargerequirementwillproduce longerriseandfalltimes, ,theappliedvoltageshoulddrivetheMOSFETga tessuchthattheaddedgatechargeandswitchin glossesarelessthanthepowersavingsgainedb yloweringRDS(on).Forexample, DutyCycleFSW SwitchingFrequencyG1 ControlMOSFETGateDriveG2 SynchronousRectifierMOSFETGateDriveIG(si nk) DriverSinkCurrentIG(source) DriverSourceCurrentIOUT OutputLoadCurrentLLUMP DrivertoMOSFETParasiticInductancePBD SynchronousRectifierMOSFETBody-DiodePowe rLossPC MOSFETConductionPowerLossPD TotalDissipatedPower(G1,Q1,G2,Q2)POUT MOSFETOutputCapacitanceLossPRR SynchronousRectifierMOSFETBody-DiodeReve rseRecoveryPowerLossPSW MOSFETSwitchingLossQG TotalGateChargeQRR Body-DiodeReverseRecoveryChargeQ1 ControlMOSFETQ2 SynchronousRectifierMOSFETRDS(on) MOSFETDrain-to-SourceOnResistanceRG MOSFETExternalDiscreteGateResistanceRGI MOSFETInternalGateResistanceRG1(sink) G1DriverSinkResistanceRG1(source) G1DriverSourceResistanceRG2(sink) G2DriverSinkResistanceRG2(source)
1 Introduction Application Report SLUA341– June 2005 Optimizing MOSFET Characteristics by Adjusting Gate Drive Amplitude …
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