Photonic Integrated Circuit (PIC) Device Structures ...

and construct electronic devices onto a single CMOS chip. Photonic integrated circuits (PICs) exist as the optical analog to integrated circuits; however, in place of transistors, PICs consist of numerous scaled

  Devices, Electronic, Circuit, Electronic devices

Assessing and Mitigating Radiation Effects in Xilinx FPGAs

This research was carried out at the Jet Propulsion Laboratory, California Institute of Technology, and was sponsored by the National Aeronautics and Space Administration Electronic Parts and Packaging (NEPP) Program.

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Radiation Effects Assessment of MRAM Devices - NASA

Radiation Effects Assessment of MRAM Devices Mohamed Elghefari Jet Propulsion Laboratory Pasadena, California Steve McClure Jet Propulsion Laboratory Pasadena, California Jet Propulsion Laboratory California Institute of Technology Pasadena, California JPL Publication 08-19 5/08 .

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S-311-S-819 - Resistor, Fixed, Foil (Managanin) Power ...

Surface Mount CODE 311 SUPERVISORY APPROV~: I I I Ronald Chinnapongse ~~ Ir~7 ... fOil, precIsion, current sensing resistor In a surface mounted package. This 4-terminal (two power J-shaped and two sense gull-wing-shaped) resistor is intended for use in ... Marking shall in no way interfere with or obscure any of the original manufacturer's ...

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S-311-S-821 - Resistor, Fixed, Foil (Manganin), Chip ...

fOil, precIsion, current sensing resistor In a surface mounted package. This chip ... Marking shall in no way interfere with or obscure any of the original manufacturer's marking. b. The number of lines shall be at discretion of the test facility or laboratory. ... Foil (Manganin), Chip, Power, Current Sensing, Surface Mount ...

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Mechanical Properties and Microstructure Investigation Of ...

Sn-Ag-Cu alloy is considered the preferred substitute for tin-lead solder in reflow applications due to its relatively low melting temperature, and superior mechanical properties and solderability compared with other lead free solders.

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32 IEEE TRANSACTIONS ON ELECTRONICS PACKAGING ...

COUREY et al.: TIN WHISKER ELECTRICAL SHORT CIRCUIT CHARACTERISTICS—PART I 33 considers the following factors: conductor spacing, lead con-tent in tin plating, process by which the tin was deposited, tin thickness, materialdirectly beneaththetin, substrate controlling

  Electrical, Part, Short, Circuit, Characteristics, Whisker, Tin whisker electrical short circuit characteristics part

IEEE TRANSACTIONS ON ELECTRONICS PACKAGING …

COUREY et al.: TIN WHISKER ELECTRICAL SHORT CIRCUIT CHARACTERISTICS—PART II 43 Fig. 4. Schematic diagram for the tin whisker test station instrumentation. Re-produced from [4]. Fig. 5. Tin whisker test station probing area close up.

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Temperature Dependent Dielectric Properties of ...

Temperature Dependent Dielectric Properties of Polycrystalline 96%Al 2O 3 Liang-Yu Chen1 and Gary W. Hunter2 1Ohio Aerospace Institute/NASA Glenn Research Center at Lewis Field, Cleveland, OH 44135 2NASA Glenn Research Center at Lewis Field, Cleveland, OH 44135 Abstract Polycrystalline Al 2O 3 substrates have been proposed and tested for high ...

  Temperatures, Dependent, Properties, Dielectric, Polycrystalline, Temperature dependent dielectric properties of, Temperature dependent dielectric properties of polycrystalline

Space Grade Requirements for Electrical Connectors

GSFC-S-311-P-10, Subminiature, electrical and coaxial contact, electrical, connector. Military Specifications and Standards MIL-STD-1344 Test Methods for Electrical Connectors MIL-STD-202: Test Methods for Electronic and Electrical Component parts MIL-C-5015, Circular, threaded, AN type, electrical, connector.

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Reflow Soldering Profile, Per J-STD-020D, Table 5-2, Pb ...

Environmental Resistance to soldering heat J-STD-020D Table 5-2 Pb-free devices (2 cycles max) Note 1: All temperatures refer to the center of the package, measured on the package body surface that is facing up during assembly reflow (e.g., live-bug).

  J std

Soil & Water Assessment Tool

Input/Output Documentation Version 2012 . Soil & Water Assessment Tool . J.G. Arnold, J.R. Kiniry, R. Srinivasan, J.R. Williams, E.B. Haney, S.L. Neitsch

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IPC/JEDEC J-STD-020D

IPC/JEDEC J-STD-020D Issue 3 Page 6 of 8 Appendix 1 – Capacitor Photographs The following photographs have been taken after the moisture soak and 3x reflow processes and are representative of the capacitors subjected to the moisture/ reflow sensitivity classification tests. 0603 C0G J Termination Ref 1. Final External Visual Ref 2.

  J std

Surface-Mount Schottky Barrier Rectifier

J-STD-002 and JESD 22-B102 E3, M3, HE3, and HM3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes the cathode end PRIMARY CHARACTERISTICS IF(AV) 3.0 A VRRM 20 V, 30 V, 40 V, 50 V, 60 V IFSM 100 A VF 0.5 V, 0.75 V TJ max. 150 °C Package SMC (DO-214AB) Circuit configuration Single SMC (DO-214AB) Cathode Anode Design Tools ...

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Moisture/Reflow Sensitivity Classification for Nonhermetic ...

version of J-STD-020, JESD22-A112 (rescinded), or IPC-SM-786 (rescinded) do not need to be reclassified to the current revision unless a change in classification level or a higher peak classification temperature is desired. Annex B provides an overview of major changes from Revision D to Revision E of this document.

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RS1M - Fast Rectifiers

RS1A − RS1M www.onsemi.com 2 SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value RS1A RS1B RS1D RS1G RS1J RS1K RS1M Units VRRM Maximum Repetitive Reverse Voltage 50 100 200 400 600 800 1000 V IF(AV) Average Rectified Forward Current at TA = 100°C 1.0 A IFSM Non−Repetitive Peak Forward …

DEPARTMENT OF DEFENSE STANDARD PRACTICE

structures for each commodity listed in the Appendices A-J. Appendix M is required to meet Public Law 115-91 of the FY 2018 National Defense ... This Standard supersedes MIL-STD-881D, dated 9 April 2018, titled Work Breakdown Structures for Defense Materiel Items. MIL …

API Std 1104 Interpretations - Welding of Pipelines and ...

API Std 1104 Interpretations - Welding of Pipelines and Related Facilities Last update: September 2021 1104 21st 5.1 1104-I-1117-17 Background: In Section 5.1, Procedure Qualification- "Before

Fast Rectifiers ES1F-ES1J

TJ Operating Junction Temperature Range −55 to 150 °C TSTG Storage Temperature Range −55 to 150 °C PD Power Dissipation 1.47 W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.