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Latch-Up White Paper - Texas Instruments
Figure 1 shows a typical, simple, cross-section of a CMOS inverter in an N-Well, P- substrate, CMOS process. The PMOS forms a parasitic vertical PNP from the P+ source/drain of the transistor (emitter), the N-Well (base) and the substrate (collector). A lateral NPN is formed from the N+ source/drain (emitter), P-
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