AOD4185/AOI4185 P-Channel Enhancement Mode …

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SymbolMaximumUnitsParameterAbsolute Maximum Ratings TC=25 C unless otherwise notedAOD4185/AOI4185P- channel Enhancement Mode field effect TransistorFeaturesVDS(V) = -40VID= -40A (VGS= -10V)RDS(ON) < 15m (VGS= -10V)RDS(ON)< 20m (VGS= )100% UIS Tested!100% Rg Tested!General DescriptionThe AOD4185/AOI4185 uses advanced trench technology to provide excellent RDS(ON)and low gate charge. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high current Compliant-Halogen Free*GDSG TO-251AIPAKTop ViewS Bottom ViewD S G D D D TO252DPAKTop ViewBottom ViewGS DGSD SymbolVDSVGSIDMIAREARTJ, TSTGSymbolTypMax15204150R C/WThermal CharacteristicsParameterUnitsMaximum Junction-to-Ambient A,Gt 10sR JA C/WSteady-StateTA=25 CPDSMTC=25 CMaximum Junction-to-Ambient A,GSteady-StatePower Dissipation AJunction and Storage Temperature RangeMaximum Junction-to-Case D,FTC=100 CPD-115-4288 C/WDrain-Source VoltageV 20Gate-Source VoltageTA=70 CPower Dissipation BAvalanche Current CRepetitive avalanche energy L= CAmJIDPulsed Drain Current C-40-31Continuous DrainCurrent B.

Parameter Symbol Maximum Units Absolute Maximum Ratings T C=25°C unless otherwise noted AOD4185/AOI4185 P-Channel Enhancement Mode Field Effect Transistor Features VDS (V) = -40V

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