Search results with tag "Silicon epitaxial"
SS8550 - PNP Epitaxial Silicon Transistor - ON Semiconductor
www.onsemi.comPNP Epitaxial Silicon Transistor SS8550 Features • 2 W Output Amplifier of Portable Radios in Class B Push−Pull Operation • Complementary to SS8050 • Collector Current: IC = 1.5 A • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol ...
BC546/547/548/549/550 NPN Epitaxial Silicon Transistor
www.sparkfun.comNPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Electrical Characteristics Ta=25°C unless otherwise noted hFE Classification Symbol Parameter Value Units VCBO Collector-Base Voltage : BC546 : BC547/550: BC548/549 80 50 30 V V V VCEO Collector-Emitter Voltage : BC546 : BC547/550: BC548/549 65 45 30 V V V
Power MOSFET Basics
www.aosmd.com- REPI: resistance from the top layer of silicon (epitaxial silicon, also known as epi); epi controls the amount of blocking voltage the MOSFET can sustain - RSUBS: resistance from the silicon substrate on which the epi is grown Figure 3a: RDSON components of a trench MOSFET For a planar MOSFET, the RDSON components are similar to
BD135 BD137 BD139 NPN SILICON TRANSISTOR
soloelectronica.netBD135 BD137/BD139 NPN SILICON TRANSISTOR SGS-THOMSONPREFERRED SALESTYPES DESCRIPTION The BD135, BD137 and BD139 are silicon epitaxial planar NPN …
SMALL SIGNAL NPN TRANSISTOR - SparkFun Electronics
www.sparkfun.com2n3904 small signal npn transistor preliminary data silicon epitaxial planar npn transistor to-92 package suitable for through-hole pcb assembly the pnp complementary type is 2n3906 applications well suitable for tv and home appliance equipment
Latch-Up White Paper - Texas Instruments
www.ti.com(epitaxial silicon) layer. The EPI layer is doped appropriately for the best transistor performance (more lightly doped than the remaining lower portion of the substrate that is highly doped). The highly doped substrate directs majority carriers to ground and reflects minority carriers making the guard rings more effective (see Figure 3).
1.EMITTER 2. BASE 3. COLLECT - atta.szlcsc.com
atta.szlcsc.comNPN silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the PNP transistor 2N3906 is Recommended This transistor is also available in the SOT-23 case with the type designation MMBT3904 MAXIMUM RATINGS (T A=25℃ unless otherwise noted) SymbolParameterValue Units V CBO Collector-Base Voltage 60 V V
ON Semiconductor Is Now
www.onsemi.comNPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Electrical Characteristics Ta=25°C unless otherwise noted * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector ...
TIP32C - STMicroelectronics
www.st.comPower transistor Applications Linear and swithing industrial equipment Description The TIP32C is a silicon Epitaxial-base PNP power transistor in Jedec TO-220 plastic package. It is intented for use in medium power linear and switching applications. The complementary NPN type is TIP31C.. Internal schematic diagram 1 2 3 TO-220 www.st.com Order ...
UTC - NKC Electronics
media.nkcelectronics.comutc s8050 npn epitaxial silicon transistor utc unisonic technologies co., ltd.1 qw-r201-013,a low voltage high current small signal npn transistor description the utc s8050 is …
Silicon Wafer Processing - National Chiao Tung University
jupiter.math.nctu.edu.twGrowth of Epitaxial Silicon This step is done to provide a good clean surface for later processing. If a layer of Silicon is grown onto the top of the wafer using chemical methods then that layer is of a much better quality then the slightly damaged or unclean layer of silicon in the wafer. The epitaxial layer is where the actual processing will be