Transcription of Power MOSFET Basics
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Power MOSFET Basics
Source Gate Power MOSFET Basics N+. P-body Table of Contents N- Epi 1. Basic Device Structure 2. Breakdown Voltage 3. On-State Characteristics N+ Substrate 4. Capacitance 5. Gate Charge Drain 6. Gate Resistance 7. Turn-on and Turn-off Figure 1b: planar MOSFET Structure 8. Body Diode Forward Voltage 9. Body Diode Reverse Recovery 2. Breakdown Voltage 10. Avalanche capability and ratings 11. dV/dt ratings In most Power MOSFETs the N+ source and P-body junction 12. Thermal Resistance Characterization are shorted through source metallization to avoid accidental 13. Power Dissipation turn-on of the parasitic bipolar transistor. When no bias is 14. Safe-Operating Area applied to the Gate, the Power MOSFET is capable of 15.
- REPI: resistance from the top layer of silicon (epitaxial silicon, also known as epi); epi controls the amount of blocking voltage the MOSFET can sustain - RSUBS: resistance from the silicon substrate on which the epi is grown Figure 3a: RDSON components of a trench MOSFET For a planar MOSFET, the RDSON components are similar to
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