Atomic Layer Deposition - ALD Academy

Atomic Layer Deposition Harm Knoops, Stephen E. Potts, Ageeth A. Bol, and (Erwin) Kessels Eindhoven University of Technology Photo: Area-selective Atomic Layer Deposition research in Eindhoven, the Netherlands. (Photo by Bart van Overbeeke) Please cite this chapter as: Knoops, Potts, Bol, and Kessels, Ch. 27 - Atomic Layer Deposition (pp. 1101 1134) in Handbook of Crystal Growth, edited by T. Kuech (Elsevier, 2015). doi: FOR TEACHING AND SCHOLARLY USE ONLY - DO NOT DISTRIBUTE 1 Abstract Atomic Layer Deposition (ALD), also referred to historically as Atomic Layer epitaxy (ALE), is a vapor-phase Deposition technique for preparing ultrathin films with precise growth control. ALD is currently rapidly evolving, mostly driven by the continuous trend to miniaturize electronic devices.

Coverage of the planar surface is evaluat-ed using the uniformity while the coverage of 3D features is evaluated using the conformality. The growth con- ... uniformly over 300 mm silicon wafers, is necessary. With the advent of 3D transistors in the 22 ... for epitaxial growth, the overall success of ALD for crys-

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  Silicon, Epitaxial, Planar

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