30V P-Channel MOSFET

AON740530V P-Channel MOSFETG eneral DescriptionProduct SummaryVDS ID (at VGS= -10V)-50A RDS(ON) (at VGS= -10V)< RDS(ON) (at VGS = -6V)< 100% UIS Tested100% Rg TestedSymbolVDS-30 VThe AON7405 uses advanced trench technology toprovide excellent RDS(ON) with low gate device is ideal for load switch and battery protectionapplications. RoHS and Halogen-Free CompliantVMaximumUnitsParameterAbsolute Maximum Ratings TA=25 C unless otherwise notedDrain-Source Voltage-30 DFN EPTop View Bottom Pin 1 Top View12348765 GDSVDSVGSIDMIAR, IASEAR, EASTJ, TSTGS ymbolt 10sSteady-StateSteady-StateR JCThermal CharacteristicsMaximum Junction-to-Case C/W C/WMaximum Junction-to-Ambient A Dissipation BWPower Dissipation APDSMWTA=70 C834TA=25 CATA=70 C-25ID-50-39TC=25 CTC=100 CA-44AV 25 Gate-Source VoltageContinuous DrainCurrentGTA=25 CIDSMVD rain-Source Voltage-30 Maximum Junction-to-Ambient A C/WR JA164520 C-210 Pulsed Drain Current CUnitsRepetitive avalanche energy L= CmJAvalanche Current C.

AON7405 30V P-Channel MOSFET General Description Product Summary VDS I D (at V GS = -10V) -50A R DS(ON) (at V GS = -10V) < 6.2mΩ R DS(ON) (at V GS = -6V) < 8.9mΩ 100% UIS Tested 100% R g Tested Symbol VDS The AON7405 uses advanced trench technology to-30V provide excellent R DS(ON) with low gate charge. This device is ideal for load switch and battery protection

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