Transcription of 60 V, 360 mA N-channel Trench MOSFET - Nexperia
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60 V, 360 mA N-channel Trench MOSFET - Nexperia
2N7002P60 V, 360 mA N-channel Trench MOSFET23 November 2020 Product data sheet1. General descriptionN- channel enhancement mode field - effect Transistor (FET) in a small SOT23 (TO-236AB)Surface-Mounted Device (SMD) plastic package using Trench MOSFET Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified3. Applications Relay driver High-speed line driver Low-side load switch Switching circuits4. Quick reference dataTable 1. Quick reference dataSymbolParameterConditionsMinTypMaxUn itVDSdrain-source voltage--60 VVGS gate-source voltageTamb = 25 C-20-20 VIDdrain currentVGS = 10 V; Tamb = 25 C[1]--360mAStatic characteristicsRDSondrain-source on-stateresistanceVGS = 10 V; ID = 500 mA; pulsed; tp 300 s; ; Tj = 25 [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 V, 360 mA N-channel Trench MOSFET5.
60 V, 360 mA N-channel Trench MOSFET 23 November 2020 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching
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