Transcription of BSS123 - ON Semiconductor
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BSS123 - ON Semiconductor
DATA Semiconductor Components Industries, LLC, 2003 November, 2021 Rev. 101 Publication Order Number: BSS123 /DN- channel Logic LevelEnhancement Mode FieldEffect TransistorBSS123 General DescriptionThese N channel enhancement mode field effect transistors areproduced using onsemi s proprietary, high cell density, DMOS technology. These products have been designed to minimize on stateresistance while provide rugged, reliable, and fast switchingperformance. These products are particularly suited for low voltage,low current applications such as small servo motor control, powerMOSFET gate drivers, and other switching A, 100 V RDS(on) = 6 @ VGS = 10 V RDS(on) = 10 @ VGS = V High Density Cell Design for Extremely Low RDS(on) Rugged and Reliable Compact Industry Standard SOT 23 Surface Mount Package This Device is Pb Free and Halogen FreeMARKING DIAGRAMD evicePackageShipping ORDERING INFORMATIONBSS123, BSS123 GSOT 23
N-Channel Logic Level Enhancement Mode Field Effect Transistor BSS123 General Description These N−Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while provide rugged, reliable, and fast ...
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