Transcription of 60V N-Channel MOSFET - Alpha & Omega Semiconductor
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60V N-Channel MOSFET - Alpha & Omega Semiconductor
AOD4130/AOI413060V N-Channel MOSFETG eneral DescriptionProduct SummaryVDS ID (at VGS=10V)30A RDS(ON) (at VGS=10V)< 24m RDS(ON) (at VGS= )< 30m 100% UIS Tested100% Rg TestedSymbolVDSVGSIDMIAS, IAREAS, EARTJ, TSTGS ymbolt 10sSteady-StateSteady-StateR JCMaximum Junction-to-Case C/W C/WMaximum Junction-to-Ambient A Dissipation BPDWP ower Dissipation APDSMWTA=70 CATA=25 CIDSMATA=70 CID3020TC=25 CTC=100 CAvalanche energy L= CmJAvalanche Current C5 Continuous AOD4130/AOI4130 combines advanced trenchMOSFET technology with a low resistance package toprovide extremely low RDS(ON). This device is ideal forboost converters and synchronous rectifiers forconsumer, telecom, industrial power supplies and Maximum Ratings TA=25 C unless otherwise noted60VV 20 Gate-Source VoltageDrain-Source Voltage60 UnitsMaximum Junction-to-Ambient A C/WR and Storage Temperature Range-55 to 175 CThermal Characteristics74 Pulsed Drain Current CContinuous DrainCurrentParameterTypMaxTC=25 CGDSGGDDSSDT
AOD4130/AOI4130 60V N-Channel MOSFET General Description Product Summary VDS I D (at V GS =10V) 30A R DS(ON) (at V GS =10V) < 24mΩ R DS(ON) (at V GS =4.5V) < 30mΩ 100% UIS Tested 100% R g Tested Symbol VDS VGS IDM IAS, I AR EAS, E AR TJ, T STG Symbol t ≤ 10s Steady-State Maximum Junction-to-Case Steady-State RθJC °C/W Maximum Junction-to-Ambient A D °C/W
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