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9群(電子材料・デバイス) 3編(半導体) 章 応用編

9 3 2 . 9 - 3 . 2 . 2012 1/(36).. 9 3 2 . 9 - 3 - 2 . 2-1 Si [2010 6 ]. Si 14 . 15 N . 30 cm SEG 11 N . SOG 7 N .. pn Si . SOI Silicon-On-Insulator LSI .. Si SiO2 MOSFET . Si . Si SiO2 Si . SOI .. Si(111) . 7 7 .. 2-1-1 Si . 111. Si 4 4 4 Oh Fd 3m . 7. - ( ) . T 1), 2) . mm a = + 10-5(T-273)+ 10-9(T-273)2 (300 K<T<1100 K). = 10-6 K-1 (T = ). = g cm-3 @ 298 K. Tm = 1687 K . = ( + 10-3T + 10-6 T 2)-1 W/cm-1K-1 . D = 636 K GPa c11 = c12 = c44 = -1. cm . (TL)O( )=520 TO(X)= LO,LA(X)= TA(X)= TO( )= LO( )= LA( )= TA( )= TO(L)= LO(L)= LA(L)= TA(L)= 103m/s 298K. //[001] //[110] //[110] //[001] // [11 0] 2012 2/(36).. 9 3 2 . //[111] [111] {111} {110} . cm2/Vs @300 K <1015 cm-3 . = 1350 ( ) = 370. 2-1-2 Si . Si 2 1 3) . 2 . Brillouin 0,0, 0 [ ,0, 0 a ] 6.

(硅素)は14 族(短周期表ではⅣ族)元素の単体であり,エレクト ロニクス産業にとって欠くべからざる物質である.既存の半導体では最も高純度(15 n:

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Transcription of 9群(電子材料・デバイス) 3編(半導体) 章 応用編

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