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GAN POWER TRANSISTORS - Panasonic

GAN POWER TRANSISTORS NEW CONTENDER FOR THE POWER TRANSISTOR THRONE: HOW GAN IS THREATENING THE MOSFET S CROWNWHITE PAPER VERSION GAN POWER TRANSISTORS VERSION CHARACTERISTICS OF GAN ..3 INTRODUCTION ..3 OVERVIEW AND ADVANTAGES ..4 GATE DRIVING PRINCIPLE ..5 Panasonic S HD-GIT STRUCTURE ..6 RELIABILITY ..7 END OF LIFE TEST ..8 SOLVING THE CURRENT COLLAPSE PROBLEM ..8 MECHANICAL STRESS ..9 TESTING TRAPPING AND CURRENT COLLAPSE ..9 ROBUSTNESS IN APPLICATION ..10 APPLICATIONS OF GIT TRANSISTORSSTRESS ..11 Panasonic GATE DRIVER IC ..12 ADVANTAGES IN APPLICATIONS ..13 TABLE OF CONTENTS3 Panasonic GAN POWER TRANSISTORS VERSION For more than 35 years, POWER MOSFETs have dominated the field of POWER converter design in the low to medium POWER range.

the potential well of the AlGaN-GaN junction above the Fermi level. In on-state, the gate behaves essentially like a diode. Unlike in MOS transistors however, a small (around 10mA) current is injected from the gate into the conducting layers by electrons tunneling through the …

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