Transcription of AO4407 Rev.14.0 Rohs
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AO4407 Rev.14.0 Rohs
AO440730V P-Channel MOSFETG eneral DescriptionProduct SummaryVDS ID (at VGS=-20V)-12A RDS(ON) (at VGS=-20V)< 13m RDS(ON) (at VGS =-10V)< 14m RDS(ON) (at VGS =-5V)< 30m 100% UIS Tested100% Rg TestedSymbolVDSThe AO4407 combines advanced trench MOSFET technology with a low resistance package to provideextremely low RDS(ON). This device is ideal for load switchand battery protection applications.* RoHS and Halogen-Free CompliantVMaximumUnitsParameterAbsolute Maximum Ratings TA=25 C unless otherwise noted-30 VDrain-Source Voltage-30 SOIC-8 Top View Bottom View DDDDSSSGGDSVDSVGSIDMIAS, IAREAS, EARTJ, TSTGS ymbolt 10sSteady-StateSteady-StateR JLMaximum Junction-to-Lead C/W C/WMaximum Junction-to-Ambient A D167524TA=25 CTA=70 CPower dissipation BPDA val
Power Dissipation B PD Avalanche energy L=0.3mH C Pulsed Drain Current C Continuous Drain Current TA=25°C mJ Avalanche Current C 101 26 A A ID-12-10-60 Gate-Source Voltage ±25 V Parameter Typ Max Units °C/W RθJA 31 59 Maximum Junction-to-Ambient A 40 TA=70°C 2 Junction and Storage Temperature Range -55 to 150 °C Thermal Characteristics W 3.1
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