AO4407 Rev.14.0 Rohs

1 AO440730V P-Channel MOSFETG eneral DescriptionProduct SummaryVDS ID (at VGS=-20V)-12A RDS(ON) (at VGS=-20V)< 13m RDS(ON) (at VGS =-10V)< 14m RDS(ON) (at VGS =-5V)< 30m 100% UIS Tested100% Rg TestedSymbolVDSThe AO4407 combines advanced trench MOSFET technology with a low resistance package to provideextremely low RDS(ON). This device is ideal for load switchand battery protection applications.* RoHS and Halogen-Free CompliantVMaximumUnitsParameterAbsolute Maximum Ratings TA=25 C unless otherwise noted-30 VDrain-Source Voltage-30 SOIC-8 Top View Bottom View DDDDSSSGGDSVDSVGSIDMIAS, IAREAS, EARTJ.

2 TSTGS ymbolt 10sSteady-StateSteady-StateR JLMaximum Junction-to-Lead C/W C/WMaximum Junction-to-Ambient A D167524TA=25 CTA=70 CPower dissipation BPDA valanche energy L= CPulsed Drain Current CContinuous DrainCurrentTA=25 CmJAvalanche Current C101A26 AID-12-10-60VV 25 Gate-Source VoltageDrain-Source Voltage-30 UnitsParameterTypMax C/WR JA315940 Maximum Junction-to-Ambient A2TA=70 CJunction and Storage Temperature Range-55 to 150 CThermal : July 2013 1 of 5 AO4407 SymbolMinTypMaxUnitsBVDSS-30 VVDS=-30V, VGS=0V-1TJ=55 C-5 IGSS 100nAVGS(th)Gate Threshold (ON) 1014TJ=125 C12191930m (on) Breakdown VoltageOn state drain currentID=-250 A, VGS=0 VVGS=-10V, VDS=-5 VVGS=-10V, ID=-12 AReverse Transfer CapacitanceVGS=0V, VDS=-15V, f=1 MHzSWITCHING PARAMETERSm Electrical Characteristics (TJ=25 C unless otherwise noted)

3 STATIC PARAMETERSP arameterConditionsIDSS AVDS=VGS ID=-250 AVDS=0V, VGS= 25 VZero Gate Voltage Drain CurrentGate-Body leakage currentIS=-1A,VGS=0 VVDS=-5V, ID= , ID=-7 ATurn-On Rise TimeForward TransconductanceDiode Forward VoltageVGS=-20V, ID=-12AV=-10V, V=-15V,Gate resistanceVGS=0V, VDS=0V, f=1 MHzTotal Gate ChargeVGS=-10V, VDS=-15V, ID=-12 AGate Source ChargeGate Drain ChargeRDS(ON)Static Drain-Source On-ResistanceMaximum Body-Diode Continuous CurrentInput CapacitanceOutput CapacitanceTurn-On DelayTimeDYNAMIC (off)24nstf12nstrr3040nsQrr22nCTHIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET.

4 APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINGOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT Diode Reverse Recovery TimeIF=-12A, dI/dt=100A/ sTurn-On Rise TimeVGS=-10V, VDS=-15V,RL= , RGEN=3 Turn-Off Fall TimeBody Diode Reverse Recovery ChargeIF=-12A, dI/dt=100A/ sTurn-Off DelayTimeA. The value of R JAis measured with the device mounted on 1in2FR-4 board with 2oz.

5 Copper, in a still air environment with TA=25 C. The value in any given application depends on the user's specific board The power dissipation PDis based on TJ(MAX)=150 C, using 10s junction-to-ambient thermal Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150 C. Ratings are based on low frequency and duty cycles to keep initialTJ=25 The R JAis the sum of the thermal impedence from junction to lead R JLand lead to The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2FR-4 board with 2oz.

6 Copper, assuming a maximum junction temperature of TJ(MAX)=150 C. The SOA curve provides a single pulse rating. : July 2013 2 of 5 AO4407 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS175210018020406080123456- ID(A)VGS(Volts)Figure 2: Transfer Characteristics (Note E)05101520253005101520 RDS(ON)(m )-ID(A)Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) On-ResistanceTemperature ( C)Figure 4: On-Resistance vs. Junction Temperature (Note E)VGS=-10 VID=-12 AVGS=-5 VID=-7A25 C125 CVDS=-5 VVGS=-5V020406080012345-ID(A)-VDS(Volts) Fig 1: On-Region Characteristics (Note E)VGS= + + (A)-VSD(Volts)Figure 6: Body-Diode Characteristics (Note E)25 C125 C(Note E)51015202530246810 RDS(ON)(m )-VGS(Volts)Figure 5: On-Resistance vs.

7 Gate-Source Voltage (Note E)ID=-12A25 C125 C : July 2013 3 of 5 AO4407 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS0246810051015202530-VGS(V olts)Qg(nC)Figure 7: Gate-Charge Characteristics0500100015002000250030000 51015202530 Capacitance (pF)-VDS(Volts)Figure 8: Capacitance CharacteristicsCissCossCrssVDS=-15 VID= (W)Pulse Width (s)Figure 10: Single Pulse Power Rating Junction-to-TA=25 (Amps)VDS(Volts)Figure 9: Maximum Forward Biased Safe 10 s10s1msDCRDS(ON) limitedTJ(Max)=150 CTA=25 C100 s10msFigure 10: Single Pulse Power Rating Junction-to-Ambient (Note F)Figure 9: Maximum Forward Biased Safe Operating Area (Note F) JANormalized Transient Thermal ResistancePulse Width (s)Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)D=Ton/TTJ,PK=TA+ JATonTPDIn descending orderD= , , , , , , single pulseR JA=75 C/WSingle Pulse.

8 July 2013 4 of 5 AO4407 -+VDCIgVdsDUT-+VDCVgsVgs10 VQgQgsQgdChargeGate Charge Test Circuit & Waveform-+VDCDUTVddVgsVdsVgsRLRgVgsVds10 %90%Resistive Switching Test Circuit & Waveformsttrd(on)tontd(off)tftoffId+LVds BVUnclamped Inductive Switching (UIS) Test Circuit & WaveformsVdsDSS2E = 1/2 LIARARVddVgsVgsRgDUT-+VDCVgsIdVgsIIgVgs- +VDCDUTLVgsVdsIsdIsdDiode Recovery Test Circuit & WaveformsVds -Vds +IFARdI/dtIRMrrVddVddQ = - Idttrr : July 2013 5 of 5