Search results with tag "60v n channel mosfet"
60V N-Channel MOSFET - Alpha & Omega Semiconductor
www.aosmd.comAOD4130/AOI4130 60V N-Channel MOSFET General Description Product Summary VDS I D (at V GS =10V) 30A R DS(ON) (at V GS =10V) < 24mΩ R DS(ON) (at V GS =4.5V) < 30mΩ 100% UIS Tested 100% R g Tested Symbol VDS VGS IDM IAS, I AR EAS, E AR TJ, T STG Symbol t ≤ 10s Steady-State Maximum Junction-to-Case Steady-State RθJC °C/W Maximum Junction-to-Ambient A D °C/W
60V N-Channel MOSFET
www.aosmd.comAON6260 60V N-Channel MOSFET General Description Product Summary VDS I D (at V GS =10V) 85A R DS(ON) (at V GS =10V) < 2.4m Ω R DS(ON) (at V GS =4.5V) < 3.5m Ω 100% UIS Tested 100% R g Tested Symbol Drain-Source Voltage VDS 60 The AON6260 uses trench MOSFET technology that is
60V N-Channel MOSFET
www.aosmd.comAO6420 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 0 2 4 6 8 10 0 2 4 6 8 10 V GS (Volts) Qg (nC) Figure 7: Gate-Charge Characteristics 0 200 400 600
60V N-Channel MOSFET - Alpha & Omega Semiconductor
www.aosmd.comAON6242 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 17 5 2 10 0 18 0 10 20 30 40 50 60 70 80 90 100 1.5 2 2.5 3 3.5 4 I D (A) VGS (Volts) Figure 2: Transfer Characteristics (Note E)
60V N-Channel MOSFET
aosmd.comAO3460 Symbol Min Typ Max Units BV DSS 60 V 1 TJ=55°C 5 IGSS Gate-Body leakage current ±10 µA VGS(th) 1 2.2 2.5 V ID(ON) 1.6 A 1.4 1.7 TJ=125°C 2.5 3 1.6 2 Ω gFS 0.8 S VSD 0.8 1 V IS 1.2 A