Search results with tag "60 v"
N-Channel 60-V (D-S) MOSFET - Vishay Intertechnology
www.vishay.comZero Gate Voltage Drain Current IDSS VDS = 48 V, VGS = 0 V, TJ = 125 C 500 A V DS = 60 V, V GS = 0 V 10 On-State Drain Current b I D(on) V DS = 10 V, V GS = 10 V 1 0.5 A
NDS7002A - N-Channel Enhancement Mode Field Effect …
www.onsemi.com2N7000, 2N7002, NDS7002A www.onsemi.com 2 ABSOLUTE MAXIMUM RATINGS Values are at TC = 25°C unless otherwise noted. Symbol Parameter Value 2N7000 2N7002 NDS7002A Unit VDSS Drain−to−Source Voltage 60 V VDGR Drain−Gate Voltage (RGS ≤ 1 MW) 60 V VGSS Gate−Source Voltage − Continuous ±20 V Gate−Source Voltage − Non Repetitive (tp < 50 ms) …
Green ZVN 4306 G 60V N-CHANNEL ENHANCEMENT MODE …
www.diodes.com60V N-CHANNEL ENHANCEMENT MODE VERTICAL MOSFET Features and Benefits ... Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID 2.1 A ... does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
FQP30N06L 60V LOGIC N-Channel MOSFET - SparkFun …
cdn.sparkfun.com60V LOGIC N-Channel MOSFET General Description ... VDSS Drain-Source Voltage 60 V ID Drain Current - Continuous (TC = 25°C) 32 A - Continuous ... 7.9 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns PD Power Dissipation (TC = 25°C) 79 W - Derate above 25°C 0.53 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C TL
FDC5612 60V N-Channel PowerTrench® MOSFET
www.onsemi.com60V N-Channel PowerTrench ... VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage ±20 V ID Drain Current - Continuous (Note 1a) 4.3 A Drain Current - Pulsed 20 PD Power Dissipation for Single Operation (Note 1a) 1.6 W (Note 1b) 0.8 TJ, Tstg Operating and Storage Junction Temperature Range …
N-Channel Power MOSFET 600 V, 2.0 OHMs - mantech.co.za
www.mantech.co.zaN-Channel Power MOSFET 600 V, 2.0 ... MOSFET dV/dt dV/dt 60 V/ns Continuous Source Current (Body Diode) IS 4.0 A Maximum Temperature for Soldering Leads TL 260 °C Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the
NTD2955, NVD2955 MOSFET – Power, P-Channel, DPAK
www.onsemi.comNTD2955/D NTD2955, NVD2955 MOSFET – Power, P-Channel, DPAK-60 V, -12 A This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power motor controls. These devices are particularly well suited for bridge
4.5 V to 60 V Input, 2 A, 4 A, 6 A, 10 A Synchronous …
www.vishay.comSiC461, SiC462, SiC463, SiC464 www.vishay.com Vishay Siliconix S18-0393-Rev. K, 16-Apr-18 3 Document Number: 65124 For technical questions, contact: powerictechsupport@vishay.com
BSS138PS 60 V, 320 mA dual N-channel Trench MOSFET
assets.nexperia.com60 V, 320 mA dual N-channel Trench MOSFET [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm 2 . [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
6.4 A, 60 V, R 41 m DS(ON) ΩΩΩΩ Elektronische Bauelemente ...
www.secosgmbh.comDS(ON) SSG4902NA 6.4 A, 60 V, R 41 mΩΩΩΩ Elektronische Bauelemente Dual N-Channel Mode Power MOSFET 15-Mar-2012 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any ...
CSD88537ND Dual 60-V N-Channel NexFET™ Power MOSFET
www.ti.comThis dual SO-8, 60 V, 12.5 mΩNexFET™ power CSD88537NDT 7-Inch Reel 250 Package Reel MOSFET is designed to serve as a half bridge in low current motor control applications.
NX7002AK - Nexperia
assets.nexperia.com60 V, single N-channel Trench MOSFET All information provided in this document is subject to legal disclaimers. Product data sheet 6 August 2015 2 / 16 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate 2 S source 3 D drain 1 2 3 TO-236AB (SOT23) 017aaa255 G D S 6. Ordering ...
60A, 60V N-CHANNEL POWER MOSFET
www.unisonic.com.tw60A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 60N06 is N-channel enhancement mode power ... Drain to Source Voltage V DSS 60 V Gate to Source Voltage V GS ±20 V Continuous Drain Current T C = 25°C I D 60 A T C = 100°C 39 A Drain Current Pulsed (Note 2) I DM 120 A
60V/2A N-Channel Trench MOSFET - Taitron Components
www.taitroncomponents.comN-Channel Trench MOSFET 60V/2A N-Channel Trench MOSFET General Description • MSK2N06W has better characteristics, such as fast switching ... VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage ± 20 V DC @Ta=25 ºC 2.0 ID* Drain Current - Continuous DC @Ta=70 ºC 1.6 A
60-V, Bidirectional, Low- or High-Side, Voltage …
www.ti.comCharger load +-+ - +3.3V 24V 48V +-+ - 48V Inductive Load Inductive Load +5V IC IL IB +5V S D G S D G Product Folder Sample & Buy …
60V N-Channel MOSFET
aosmd.comAO3460 Symbol Min Typ Max Units BV DSS 60 V 1 TJ=55°C 5 IGSS Gate-Body leakage current ±10 µA VGS(th) 1 2.2 2.5 V ID(ON) 1.6 A 1.4 1.7 TJ=125°C 2.5 3 1.6 2 Ω gFS 0.8 S VSD 0.8 1 V IS 1.2 A
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