Channel Mosfet
Found 8 free book(s)
30V P-Channel MOSFET
www.aosmd.comAON7405 30V P-Channel MOSFET General Description Product Summary VDS I D (at V GS = -10V) -50A R DS(ON) (at V GS = -10V) < 6.2mΩ R DS(ON) (at V GS = -6V) < 8.9mΩ 100% UIS Tested 100% R g Tested Symbol VDS The AON7405 uses advanced trench technology to-30V provide excellent R DS(ON) with low gate charge. This device is ideal for load switch and battery protection
AO4468 Rev.7.0 Rohs - Alpha & Omega Semiconductor
aosmd.comAO4468 30V N-Channel MOSFET General Description Product Summary VDS I D (at V GS =10V) 10.5A R DS(ON) (at V GS =10V) < 17mΩ R DS(ON) (at V GS = 4.5V) < 23mΩ ESD Protected 100% UIS Tested 100% R g Tested Symbol VDS The AO4468 combines advanced trench MOSFET
N-Channel 1.25-W, 2.5-V MOSFET
www.vishay.comSi2302DS Vishay Siliconix Document Number: 70628 S-53600—Rev. D, 22-May-97 www.vishay.com FaxBack 408-970-5600 2-1 N-Channel 1.25-W, 2.5-V MOSFET
N-Channel 30-V (D-S) MOSFET
www.vishay.comDocument Number: 72768 S09-0272-Rev. G, 16-Feb-09 www.vishay.com 3 Vishay Siliconix Si7636DP TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
CSD18563Q5A 60 V N-Channel NexFET™ Power MOSFET
www.ti.com0 3 6 9 12 15 18 21 24 0 2 4 6 8 10 12 14 16 18 20 V GS Gateto Source Voltage (V) R DS (on) OnState Resistance (m W) T C = 25°C, I D = 18A T C = 125°C ...
DMG2305UX - Diodes Incorporated
www.diodes.comDMG2305UX Document number: DS36196 Rev. 7 - 2 © Diodes Incorporated 1 of 6 www.diodes.com September 2018 DMG2305UX P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BV
MOSFET Device Physics and Operation
homepages.rpi.edu1 MOSFET Device Physics and Operation 1.1 INTRODUCTION A field effect transistor (FET) operates as a conducting semiconductor channel with two ohmic contacts – the source and the drain – where the number of charge carriers in the channel is controlled by a third contact – the gate.In the vertical direction, the gate-
IRFF130 Product Datasheet - Infineon Technologies
www.irf.comFeatures Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements The HEXFET® technology is the key to International Rectifier’s HiRel advanced line of power MOSFET transistors.