60V N-Channel MOSFET

1 AO346060V N-Channel MOSFETP roduct SummaryVDS(V) = 60 VID= (VGS= 10V)RDS(ON) < (VGS= 10V)RDS(ON)< 2 (VGS= )ESD protectedGeneral DescriptionThe AO3460 uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as , in the small SOT-23 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters. It is ESD protected. G DSSOT23 Top View Bottom View DGSDS ymbolVDSVGSIDMTJ, TSTGS ymbolTypMax7090100125R to 150 WTA=70 CMaximum Junction-to-Lead CSteady-State C/WThermal CharacteristicsParameterUnitsMaximum Junction-to-Ambient At 10sR JATA=70 CAbsolute Maximum Ratings TA=25 C unless otherwise noted C/WMaximum Junction-to-Ambient ASteady-State C/W 20 Gate-Source VoltageJunction and Storage Temperature Range Voltage60 Continuous DrainCurrent A, FMaximumUnitsParameterTA=25 CPulsed Drain Current BPower Dissipation ATA=25.

2 July 2013 1 of 4 AO3460 SymbolMinTypMaxUnitsBVDSS60V1TJ=55 C5 IGSSGate-Body leakage current 10 AVGS(th) (ON) Qg(10V) ( ) (on) state drain currentVGS=10V, VDS=5 VMaximum Body-Diode Continuous CurrentSWITCHING PARAMETERSI nput CapacitanceDYNAMIC PARAMETERS VGS= , ID= , ID= ,VGS=0 VVGS=10V, VDS=30V, RL=75 ,Output CapacitanceTurn-On DelayTimeRDS(ON)Static Drain-Source On-ResistanceForward TransconductanceDiode Forward VoltageIDSS AGate Threshold VoltageVDS=VGS ID=250uAVDS=60V, VGS=0 VVDS=0V, VGS= 20 VZero Gate Voltage Drain CurrentElectrical Characteristics (TJ=25 C unless otherwise noted)STATIC PARAMETERSP arameterConditionsDrain-Source Breakdown VoltageID=250 A, VGS=0 VVGS=10V, ID= Transfer CapacitanceVGS=0V, VDS=30V, f=1 MHzTurn-On Rise TimeGate resistanceVGS=0V, VDS=0V, f=1 MHzTotal Gate ChargeVGS=10V, VDS=30V, ID= Gate ChargeGate Source ChargeGate Drain : July 2013 2 of 4 (off) PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET.

3 APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINGOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT DelayTimeVGS=10V, VDS=30V, RL=75 ,RGEN=3 Turn-Off Fall TimeBody Diode Reverse Recovery TimeBody Diode Reverse Recovery ChargeIF= , dI/dt=100A/ s, VGS=-9 VIF= , dI/dt=100A/ s, VGS=-9 VTurn-On Rise TimeA: The value of R JAis measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA =25 C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction The R JAis the sum of the thermal impedence from junction to lead R JLand lead to The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle These tests are performed with the device mounted on 1 in2FR-4 board with 2oz.

4 Copper, in a still air environment with TA=25 C. The SOA curve provides a single pulse rating. F. The current rating is based on the t 10s thermal resistance : July 2013 2 of 4 AO3460 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICSVDS=0V, VGS= 10 VVDS=VGS ID=250 (A)VDS(Volts)Figure 1: On-Region CharacteristicsVGS= (A)VGS(Volts)Figure 2: Transfer Characteristics-40 (ON)( ) On-ResistanceVGS=10 VID= C125 CVDS=5 VVGS=10 VVGS= : July 2013 3 of 4 (A)Figure 3: On-Resistance vs. Drain Current and Gate + (A)VSD(Volts)Figure 6: Body-Diode Characteristics25 C125 C-40 ( C)Figure 4: On-Resistance vs. Junction (ON)( )VGS(Volts)Figure 5: On-Resistance vs. Gate-Source VoltageID= C125 : July 2013 3 of 4 AO3460 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICSVDS=0V, VGS= 10 VVDS=VGS ID=250 (Volts)Qg(nC)Figure 7: Gate-Charge Characteristics0510152025300102030405060 Capacitance (pF)VDS(Volts)Figure 8: Capacitance (W)CossCrssVDS=30 VID= (Max)=150 CTA=25 (Amps)10 (ON) limitedTJ(Max)=150 CTC=25 C100 : July 2013 4 of 4 Width (s)Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note E) JANormalized Transient Thermal ResistancePulse Width (s)Figure 11: Normalized Maximum Transient Thermal ImpedanceSingle PulseD=Ton/TTJ,PK=TA+ JAR JA=125 C/WIn descending orderD= , , , , , , single (Volts)Figure 9: Maximum Forward Biased Safe Operating Area (Note E)TC=25 : July 2013 4 of 4