30V N-Channel MOSFET

1 ao3400a . 30V N-Channel MOSFET . General Description Product Summary The ao3400a combines advanced trench MOSFET VDS 30V. technology with a low resistance package to provide ID (at VGS=10V) extremely low RDS(ON). This device is suitable for use as a RDS(ON) (at VGS=10V) < . load switch or in PWM applications. RDS(ON) (at VGS = ) < 32m . RDS(ON) (at VGS = ) < 48m . SOT23. Top View Bottom View D. D. D. G G. S. S. G S. Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter Symbol Maximum Units Drain-Source Voltage VDS 30 V.

2 Gate-Source Voltage VGS 12 V. Continuous Drain TA=25 C ID. Current TA=70 C A. C. Pulsed Drain Current IDM 30. TA=25 C PD W. Power Dissipation B TA=70 C Junction and Storage Temperature Range TJ, TSTG -55 to 150 C. Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t 10s 70 90 C/W. R JA. Maximum Junction-to-Ambient A D Steady-State 100 125 C/W. Maximum Junction-to-Lead Steady-State R JL 63 80 C/W. Rev 3: Dec 2011 Page 1 of 5. ao3400a . Electrical Characteristics (TJ=25 C unless otherwise noted).

3 Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS. BVDSS Drain-Source Breakdown Voltage ID=250 A, VGS=0V 30 V. VDS=30V, VGS=0V 1. IDSS Zero Gate Voltage Drain Current A. TJ=55 C 5. IGSS Gate-Body leakage current VDS=0V, VGS= 12V 100 nA. VGS(th) Gate Threshold Voltage VDS=VGS ID=250 A V. ID(ON) On state drain current VGS= , VDS=5V 30 A. VGS=10V, ID= 18 m . TJ=125 C 28 38. RDS(ON) Static Drain-Source On-Resistance VGS= , ID=5A 19 32 m . VGS= , ID=3A 24 48 m . gFS Forward Transconductance VDS=5V, ID= 33 S.

4 VSD Diode Forward Voltage IS=1A,VGS=0V 1 V. IS Maximum Body-Diode Continuous Current 2 A. DYNAMIC PARAMETERS. Ciss Input Capacitance 630 pF. Coss Output Capacitance VGS=0V, VDS=15V, f=1 MHz 75 pF. Crss Reverse Transfer Capacitance 50 pF. Rg Gate resistance VGS=0V, VDS=0V, f=1 MHz 3 . SWITCHING PARAMETERS. Qg Total Gate Charge 6 7 nC. Qgs Gate Source Charge VGS= , VDS=15V, ID= nC. Qgd Gate Drain Charge nC. tD(on) Turn-On DelayTime 3 ns tr Turn-On Rise Time VGS=10V, VDS=15V, RL= , ns tD(off) Turn-Off DelayTime RGEN=3 25 ns tf Turn-Off Fall Time 4 ns trr Body Diode Reverse Recovery Time IF= , dI/dt=100A/ s ns Qrr Body Diode Reverse Recovery Charge IF= , dI/dt=100A/ s nC.

5 A. The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25 C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150 C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150 C. Ratings are based on low frequency and duty cycles to keep initialTJ=25 C. D. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient.

6 E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150 C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED.

7 AOS DOES NOT ASSUME ANY LIABILITY ARISING. OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 3: Dec 2011 Page 2 of 5. ao3400a . TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS. 40 15. 10V 3V. 35 VDS=5V. 12. 30. 25 9. ID (A). ID(A). 20. 15 6. 125 C 25 C. 10. VGS=2V 3. 5. 0 0. 0 1 2 3 4 5 0 1 2 3. VDS (Volts) VGS(Volts). Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E). 30 VGS= Normalized On-Resistance ID=5A.

8 25. ). VGS= RDS(ON) (m . 17. 20. VGS=10V5. ID= 15. 10. VGS=10V. 1. 10 0 5 10 15 20 0 25 50 75 100 125 150 175. ID (A). Figure 3: On-Resistance vs. Drain Current and Gate Temperature ( C) 0. Voltage (Note E) Figure 4: On-Resistance vs. Junction 18 Temperature (Note E). 50 +01. ID= +00. 40 40. ). RDS(ON) (m . 125 C. IS (A). 125 C. 30 25 C. 20. 25 C. 10 0 2 4 6 8 10 VGS (Volts) VSD (Volts). Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E). (Note E). Rev 3: Dec 2011 Page 3 of 5.

9 ao3400a . TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS. 5 1000. VDS=15V. ID= 4 800. Ciss Capacitance (pF). VGS (Volts). 3 600. 2 400. Coss 1 200. Crss 0 0. 0 2 4 6 8 0 5 10 15 20 25 30. Qg (nC) VDS (Volts). Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics 1000. TA=25 C. 10 s RDS(ON) 100. Power (W). limited 100 s ID (Amps). 1ms 10ms 10. TJ(Max)=150 C. TA=25 C 10s DC. 1. 10 1000. 1 10 100. VDS (Volts) Pulse Width (s). Figure 10: Single Pulse Power Rating Junction-to- Figure 9: Maximum Forward Biased Safe Ambient (Note F).

10 Operating Area (Note F). 10. D=Ton/T In descending order Z JA Normalized Transient TJ,PK=TA+ JA D= , , , , , , single pulse Thermal Resistance 1 R JA=125 C/W. PD. Single Pulse Ton T. 1 10 100 1000. Pulse Width (s). Figure 11: Normalized Maximum Transient Thermal Impedance (Note F). Rev 3: Dec 2011 Page 4 of 5. ao3400a . Gate Charge Test Circuit & Waveform Vgs Qg 10V. +. VDC. + Vds Qgs Qgd - VDC. DUT - Vgs Ig Charge R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s RL. V ds Vds 90 %. DUT. + Vdd Vgs VDC.