30v P
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ZXM61P03F 30V P-channel enhancement mode MOSFET …
www.diodes.com1 SEMICONDUCTORS ZXM61P03F ISSUE 1 - OCTOBER 2005 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS=-30V; R DS(ON)=0.35 ; I D=-1.1A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique
30V P-Channel MOSFET
www.aosmd.comAON6407 30V P-Channel MOSFET General Description Product Summary VDS I D (at V GS = -10V) -85A R DS(ON) (at V GS = -10V) < 4.5m Ω R DS(ON) (at V GS = -6V) < 6.0m Ω 100% UIS Tested 100% R g Tested Symbol Drain-Source Voltage VDS-30 The AON6407 combines advanced trench MOSFET
30V P-Channel MOSFET
aosmd.comAO4801A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 17 5 2 10 0 18 40 0 5 10 15 20 0 0.5 1 1.5 2 2.5 3-V GS (Volts) Figure 2: Transfer Characteristics (Note E)-I
V R D -30V = -10V -3
www.irf.com2 www.irf.com PROVISIONAL Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.3A, VGS = 0V trr Reverse Recovery Time ––– 17 26 ns TJ = 25°C, IF = -1.3A
NISB 3600 Quick Reference Guide Ver A. (P/N: …
files.nexcom.comNISB 3600 Quick Reference Guide Ver A. (P/N: 60177A0267X00) CON1 JP4 JP5 JP6 J11 JP1 JP3 FAN1 J1 J3 J4 FAN2 Power Switch Cfast Display Port USB 3.0 Remote Power on/off Switch 9-30V Input
IRHNJ57Z30 RADIATION HARDENED JANSR2N7479U3 …
www.irf.comwww.irf.com 3 Pre-Irradiation IRHNJ57Z30, JANSR2N7479U3 Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation Parameter Up to 500K Rads(Si)1 1000K Rads (Si) 2 Units Test Conditions Min Max Min Max
30V N-ChannelNexFET™ Power MOSFETs
www.ti.comCSD17304Q3 SLPS258A – FEBRUARY 2010– REVISED OCTOBER 2010 www.ti.com These devices have limited built-inESD protection. The leads should be shorted together or …
30V, N-ChannelNexFET™ Power MOSFETs
www.ti.comCSD17501Q5A SLPS303B – DECEMBER 2010– REVISED SEPTEMBER 2012 www.ti.com These devices have limited built-inESD protection. The leads should be …
RFID Specifications Technical Data
literature.rockwellautomation.comRockwell Automation Publication 56RF-TD001D-EN-P - December 2018 5 High-frequency EtherNet/IP Interface Block Table 6 - General Specifications Attribute 56RF-IN …
FDS6675 - onsemi.com
www.onsemi.comFDS6675 Single P-Channel, Logic Level, PowerTrench TM MOSFET Features Absolute Maximum Ratings T A = 25 o C unless otherwise noted Symbol Parameter FDS6675 Units V DSS Drain-Source Voltage -30 V V GSS Gate-Source Voltage ± 20 V I D Drain Current - Continuous (Note 1a)-11 A - Pulsed -50 P D Power Dissipation for Single Operation (Note 1a) 2.5 W (Note 1b) 1.2 (Note 1c) 1 T J,T STG …